IXTP1R4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Width :

4.83 mm

JEDEC-95 Code :

TO-220AB

Maximum Operating Temperature :

+ 150 C

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

3A

Mounting Style :

Through Hole

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Power Dissipation (Max) :

63W (Tc)

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

1000 V

Number of Channels :

1 Channel

Pbfree Code :

yes

Mount :

Through Hole

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1.4A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

35ns

Manufacturer :

IXYS

Power Dissipation-Max :

63W Tc

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Package :

Tube

Configuration :

Single

Surface Mount :

No

Supplier Device Package :

TO-220AB

Rds On (Max) @ Id, Vgs :

11 Ω @ 500mA, 10V

Series :

Polar™

Base Product Number :

IXTP1

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

11 Ω

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

Published :

2011

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

100 mJ

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

9.15 mm

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

FET Feature :

--

Length :

10.66 mm

Factory Lead Time :

24 Weeks

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Reach Compliance Code :

Compliant

Pin Count :

3

Turn-Off Delay Time :

65 ns

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Transistor Element Material :

SILICON

Power Dissipation :

63W

Number of Terminations :

3

Number of Terminals :

3

Transistor Polarity :

N-Channel

Fall Time (Typ) :

28 ns

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

1kV

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

1000V

Number of Elements :

1

Packaging :

Tube

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1.4 A

RoHS :

Details

Power Dissipation-Max (Abs) :

63 W