IXTP1R4N100P

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Mfr.Part #
IXTP1R4N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 1.4A TO220AB
Stock
22,828
In Stock :
22,828

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
1000 V
Width :
4.83 mm
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Terminal Position :
Single
Power Dissipation-Max :
63W Tc
Turn-Off Delay Time :
65 ns
Drain-source On Resistance-Max :
11 Ω
Base Product Number :
IXTP1
Product Type :
MOSFET
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
Published :
2011
Number of Terminations :
3
Height :
9.15 mm
Element Configuration :
Single
Power Dissipation-Max (Abs) :
63 W
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
1.4 A
Reach Compliance Code :
Compliant
Package :
Tube
Package / Case :
TO-220-3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form :
THROUGH-HOLE
RoHS :
Details
Product Category :
MOSFET
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
Length :
10.66 mm
Supplier Device Package :
TO-220AB
JEDEC-95 Code :
TO-220AB
Pulsed Drain Current-Max (IDM) :
3A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
24 Weeks
Drain to Source Voltage (Vdss) :
1000V
Power Dissipation (Max) :
63W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
Number of Channels :
1 Channel
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Power Dissipation :
63W
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Pin Count :
3
Drain to Source Breakdown Voltage :
1kV
JESD-609 Code :
e1
Brand :
IXYS
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Rise Time :
35ns
FET Feature :
--
Product Status :
Active
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Continuous Drain Current (ID) :
1.4A
Channel Mode :
Enhancement
Vgs (Max) :
±20V
Manufacturer :
IXYS
Lead Free :
Lead Free
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
Polar™
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
100 mJ
Mount :
Through Hole
Fall Time (Typ) :
28 ns
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
Datasheets
IXTP1R4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP1R4N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Number of Channels:1 Channel, IXTP1R4N100P pinout, IXTP1R4N100P datasheet PDF, IXTP1R4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP1R4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP1R4N100P


N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-220-3

IXTP1R4N100P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [1.4 A] according to its drain current.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP1R4N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTP1R4N100P Applications


There are a lot of IXYS
IXTP1R4N100P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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