IXTP1N80P
- Mfr.Part #
- IXTP1N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1A TO220AB
- Stock
- 49,497
- In Stock :
- 49,497
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Power Dissipation-Max :
- 42W Tc
- JESD-30 Code :
- R-PSFM-T3
- Base Product Number :
- IXTP1
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs) :
- 42 W
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Breakdown Voltage :
- 800V
- Series :
- Polar™
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 1A
- Pin Count :
- 3
- Supplier Device Package :
- TO-220AB
- Power Dissipation :
- 42W
- FET Feature :
- --
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 42W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 14 Ω
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Details
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 2A
- Published :
- 2009
- Continuous Drain Current (ID) :
- 1A
- Rds On (Max) @ Id, Vgs :
- 14 Ω @ 500mA, 10V
- Mounting Style :
- Through Hole
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 800 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Factory Lead Time :
- 24 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Drain to Source Voltage (Vdss) :
- 800V
- Datasheets
- IXTP1N80P

N-Channel Tube 14 Ω @ 500mA, 10V ±20V 250pF @ 25V 9nC @ 10V 800V TO-220-3
IXTP1N80P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 2A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP1N80P Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 800V voltage
based on its rated peak drain current 2A.
a 800V drain to source voltage (Vdss)
IXTP1N80P Applications
There are a lot of IXYS
IXTP1N80P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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