IXTP1N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

75 mJ

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

42 W

FET Feature :

--

JEDEC-95 Code :

TO-220AB

Configuration :

Single

Mount :

Through Hole

Base Product Number :

IXTP1

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Continuous Drain Current (ID) :

1A

Surface Mount :

No

Number of Terminations :

3

Power Dissipation (Max) :

42W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

800V

Packaging :

Tube

Power Dissipation :

42W

Product Category :

MOSFET

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Product Type :

MOSFET

Drain Current-Max (Abs) (ID) :

1A

Series :

Polar™

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4V @ 50μA

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Drain-source On Resistance-Max :

14 Ω

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Package :

Tube

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

800V

Factory Lead Time :

24 Weeks

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Brand :

IXYS

Package / Case :

TO-220-3

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Pulsed Drain Current-Max (IDM) :

2A

Maximum Operating Temperature :

+ 150 C

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Terminal Position :

Single

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

14 Ω @ 500mA, 10V

Transistor Type :

1 N-Channel

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Supplier Device Package :

TO-220AB

DS Breakdown Voltage-Min :

800 V

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2009

Additional Feature :

AVALANCHE RATED

RoHS :

Details

Power Dissipation-Max :

42W Tc

Vgs (Max) :

±20V