IXTP1N120P

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Mfr.Part #
IXTP1N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 1A TO220AB
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
54 ns
Maximum Operating Temperature :
+ 150 C
Rise Time :
28ns
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
1A
Additional Feature :
AVALANCHE RATED
Brand :
IXYS
Number of Terminations :
3
Package / Case :
TO-220-3
Packaging :
Tube
Manufacturer :
IXYS
Mounting Type :
Through Hole
Height :
9.15 mm
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Gate Charge (Qg) (Max) @ Vgs :
17.6nC @ 10V
Avalanche Energy Rating (Eas) :
100 mJ
Factory Lead Time :
24 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn)
Drain to Source Voltage (Vdss) :
1200V
Drain to Source Breakdown Voltage :
1.2kV
Number of Channels :
1 Channel
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
1.8A
Power Dissipation :
63W
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 25V
FET Feature :
--
Length :
10.66 mm
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Power Dissipation-Max :
63W Tc
Number of Elements :
1
Mounting Style :
Through Hole
Vgs (Max) :
±20V
Number of Pins :
3
Pin Count :
3
Published :
2007
Fall Time (Typ) :
27 ns
Qualification Status :
Not Qualified
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
1A
JEDEC-95 Code :
TO-220AB
Width :
4.82 mm
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Power Dissipation (Max) :
63W (Tc)
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
RoHS :
Details
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Series :
PolarVHV™
Supplier Device Package :
TO-220AB
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
Product Status :
Active
Element Configuration :
Single
Case Connection :
DRAIN
Base Product Number :
IXTP1
Pbfree Code :
yes
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
Datasheets
IXTP1N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP1N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, IXTP1N120P pinout, IXTP1N120P datasheet PDF, IXTP1N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP1N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP1N120P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 550pF @ 25V 17.6nC @ 10V 1200V TO-220-3

IXTP1N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.With a drain-source breakdown voltage of 1.2kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1.2kV.1A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 54 ns.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP1N120P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP1N120P Applications


There are a lot of IXYS
IXTP1N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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