IXTP1N120P
- Mfr.Part #
- IXTP1N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 1A TO220AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 54 ns
- Maximum Operating Temperature :
- + 150 C
- Rise Time :
- 28ns
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 1A
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Manufacturer :
- IXYS
- Mounting Type :
- Through Hole
- Height :
- 9.15 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 17.6nC @ 10V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Factory Lead Time :
- 24 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Voltage (Vdss) :
- 1200V
- Drain to Source Breakdown Voltage :
- 1.2kV
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Power Dissipation :
- 63W
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- FET Feature :
- --
- Length :
- 10.66 mm
- Reach Compliance Code :
- Compliant
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max :
- 63W Tc
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Pin Count :
- 3
- Published :
- 2007
- Fall Time (Typ) :
- 27 ns
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 1A
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.82 mm
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Power Dissipation (Max) :
- 63W (Tc)
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- RoHS :
- Details
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Series :
- PolarVHV™
- Supplier Device Package :
- TO-220AB
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Base Product Number :
- IXTP1
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Datasheets
- IXTP1N120P

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 550pF @ 25V 17.6nC @ 10V 1200V TO-220-3
IXTP1N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.With a drain-source breakdown voltage of 1.2kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1.2kV.1A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 54 ns.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP1N120P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP1N120P Applications
There are a lot of IXYS
IXTP1N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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