IXTP1N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Turn-Off Delay Time :

54 ns

Power Dissipation :

63W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Number of Elements :

1

Factory Lead Time :

24 Weeks

Drain to Source Voltage (Vdss) :

1200V

Configuration :

Single

RoHS :

Details

Product Category :

MOSFET

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

1.8A

Avalanche Energy Rating (Eas) :

100 mJ

Rise Time :

28ns

Reach Compliance Code :

Compliant

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

17.6nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

27 ns

Published :

2007

JESD-609 Code :

e3

Product Status :

Active

Brand :

IXYS

Series :

PolarVHV™

Package :

Tube

Element Configuration :

Single

Transistor Type :

1 N-Channel

Power Dissipation-Max :

63W Tc

Height :

9.15 mm

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

1A

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Lead Free :

Lead Free

Mounting Type :

Through Hole

Case Connection :

DRAIN

Base Product Number :

IXTP1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Length :

10.66 mm

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Pbfree Code :

yes

Channel Mode :

Enhancement

Mounting Style :

Through Hole

Width :

4.82 mm

Number of Terminations :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1A

Number of Pins :

3

Product Type :

MOSFET

Power Dissipation (Max) :

63W (Tc)

Drain to Source Breakdown Voltage :

1.2kV

Supplier Device Package :

TO-220AB