IXTP1N120P
- Mfr.Part #
- IXTP1N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 1A TO220AB
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Published :
- 2007
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 24 Weeks
- Continuous Drain Current (ID) :
- 1A
- Reach Compliance Code :
- Compliant
- Product Status :
- Active
- Width :
- 4.82 mm
- Rise Time :
- 28ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 1.2kV
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PolarVHV™
- FET Type :
- N-Channel
- FET Feature :
- --
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Drain Current-Max (Abs) (ID) :
- 1A
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 63W (Tc)
- Length :
- 10.66 mm
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 1200V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Pin Count :
- 3
- Brand :
- IXYS
- Power Dissipation :
- 63W
- Power Dissipation-Max :
- 63W Tc
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 17.6nC @ 10V
- Fall Time (Typ) :
- 27 ns
- Element Configuration :
- Single
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Base Product Number :
- IXTP1
- Configuration :
- Single
- Height :
- 9.15 mm
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Turn-Off Delay Time :
- 54 ns
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IXTP1N120P

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 550pF @ 25V 17.6nC @ 10V 1200V TO-220-3
IXTP1N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.With a drain-source breakdown voltage of 1.2kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1.2kV.1A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 54 ns.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP1N120P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP1N120P Applications
There are a lot of IXYS
IXTP1N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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