IXTP1N100P

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Mfr.Part #
IXTP1N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 1A TO220AB
Stock
142
In Stock :
142

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-220AB
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
50W
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
331pF @ 25V
Mount :
Through Hole
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Package :
Tube
Package Shape :
RECTANGULAR
Published :
2000
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Case Connection :
DRAIN
Vgs (Max) :
±20V
Number of Elements :
1
Pbfree Code :
yes
Rise Time :
26ns
FET Feature :
--
Transistor Type :
1 N-Channel
Continuous Drain Current (ID) :
1A
Height :
9.15 mm
Base Product Number :
IXTP1
Power Dissipation-Max (Abs) :
50 W
Power Dissipation (Max) :
50W (Tc)
Surface Mount :
No
Drain-source On Resistance-Max :
15 Ω
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
Number of Terminals :
3
Supplier Device Package :
TO-220AB
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
Single
Power Dissipation-Max :
50W Tc
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
1.8A
Rds On (Max) @ Id, Vgs :
15 Ω @ 500mA, 10V
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
24 Weeks
Element Configuration :
Single
Qualification Status :
Not Qualified
Pin Count :
3
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
24 ns
Channel Mode :
Enhancement
Terminal Finish :
Matte Tin (Sn)
Turn-Off Delay Time :
55 ns
RoHS :
Details
Reach Compliance Code :
Compliant
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Length :
10.66 mm
Width :
4.83 mm
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
100 mJ
DS Breakdown Voltage-Min :
1000 V
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
1A Tc
FET Type :
N-Channel
Brand :
IXYS
Drain Current-Max (Abs) (ID) :
1A
Drain to Source Breakdown Voltage :
1kV
Series :
Polar™
Packaging :
Tube
Datasheets
IXTP1N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP1N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, IXTP1N100P pinout, IXTP1N100P datasheet PDF, IXTP1N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP1N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP1N100P


N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-220-3

IXTP1N100P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 331pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [1A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.8A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP1N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTP1N100P Applications


There are a lot of IXYS
IXTP1N100P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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