IXTP1N100P
- Mfr.Part #
- IXTP1N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1A TO220AB
- Stock
- 142
- In Stock :
- 142
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Active
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 50W
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 331pF @ 25V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- Published :
- 2000
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Rise Time :
- 26ns
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Continuous Drain Current (ID) :
- 1A
- Height :
- 9.15 mm
- Base Product Number :
- IXTP1
- Power Dissipation-Max (Abs) :
- 50 W
- Power Dissipation (Max) :
- 50W (Tc)
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 15 Ω
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Power Dissipation-Max :
- 50W Tc
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 500mA, 10V
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 24 Weeks
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Terminal Position :
- Single
- Minimum Operating Temperature :
- - 55 C
- Fall Time (Typ) :
- 24 ns
- Channel Mode :
- Enhancement
- Terminal Finish :
- Matte Tin (Sn)
- Turn-Off Delay Time :
- 55 ns
- RoHS :
- Details
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Length :
- 10.66 mm
- Width :
- 4.83 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 15.5nC @ 10V
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 100 mJ
- DS Breakdown Voltage-Min :
- 1000 V
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- FET Type :
- N-Channel
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 1A
- Drain to Source Breakdown Voltage :
- 1kV
- Series :
- Polar™
- Packaging :
- Tube
- Datasheets
- IXTP1N100P

N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-220-3
IXTP1N100P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 331pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [1A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.8A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP1N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTP1N100P Applications
There are a lot of IXYS
IXTP1N100P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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