IXTP180N10T

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Mfr.Part #
IXTP180N10T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 180A TO220AB
Stock
5,334
In Stock :
5,334

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
ECCN Code :
EAR99
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Height :
9.15 mm
Length :
10.66 mm
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Qualification Status :
Not Qualified
Rise Time :
54ns
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Power Dissipation :
480W
Gate Charge (Qg) (Max) @ Vgs :
151nC @ 10V
Case Connection :
DRAIN
Reach Compliance Code :
Unknown
Continuous Drain Current (ID) :
180A
RoHS :
Details
Drain to Source Voltage (Vdss) :
100V
Operating Temperature :
-55°C~175°C TJ
Channel Mode :
Enhancement
JEDEC-95 Code :
TO-220AB
Manufacturer :
IXYS
Continuous Drain Current Id :
180A
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Brand :
IXYS
Drain to Source Breakdown Voltage :
100V
Base Product Number :
IXTP180
Number of Elements :
1
Series :
TrenchMV™
Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Matte Tin (Sn)
Mounting Type :
Through Hole
Factory Lead Time :
24 Weeks
Package / Case :
TO-220-3
Pin Count :
3
Supplier Device Package :
TO-220AB
Product Type :
MOSFET
Transistor Element Material :
SILICON
Published :
2008
Pbfree Code :
yes
FET Feature :
--
FET Type :
N-Channel
Number of Channels :
1 Channel
Channel Type :
N Channel
JESD-30 Code :
R-PSFM-T3
Transistor Polarity :
N-Channel
Tradename :
HiPerFET
Mount :
Through Hole
Number of Terminations :
3
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
750 mJ
Rds On (Max) @ Id, Vgs :
6.4m Ω @ 25A, 10V
Width :
4.83 mm
Qualification :
-
Product Status :
Active
Turn-Off Delay Time :
42 ns
Transistor Type :
1 N-Channel
Packaging :
Tube
Vgs (Max) :
±30V
Power Dissipation-Max :
480W Tc
Power Dissipation (Max) :
480W (Tc)
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 175 C
Additional Feature :
AVALANCHE RATED, ULTRA LOW RESISTANCE
Pulsed Drain Current-Max (IDM) :
450A
Fall Time (Typ) :
31 ns
Drain-source On Resistance-Max :
0.0064Ohm
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
Datasheets
IXTP180N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP180N10T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1 Channel, Number of Terminations:3, IXTP180N10T pinout, IXTP180N10T datasheet PDF, IXTP180N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP180N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP180N10T


N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-220-3

IXTP180N10T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6900pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 180A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 42 ns.Peak drain current for this device is 450A, which is its maximum pulsed drain current.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP180N10T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)


IXTP180N10T Applications


There are a lot of IXYS
IXTP180N10T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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