IXTP180N10T
- Mfr.Part #
- IXTP180N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO220AB
- Stock
- 5,334
- In Stock :
- 5,334
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- Height :
- 9.15 mm
- Length :
- 10.66 mm
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Rise Time :
- 54ns
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Power Dissipation :
- 480W
- Gate Charge (Qg) (Max) @ Vgs :
- 151nC @ 10V
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Unknown
- Continuous Drain Current (ID) :
- 180A
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~175°C TJ
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-220AB
- Manufacturer :
- IXYS
- Continuous Drain Current Id :
- 180A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Brand :
- IXYS
- Drain to Source Breakdown Voltage :
- 100V
- Base Product Number :
- IXTP180
- Number of Elements :
- 1
- Series :
- TrenchMV™
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 24 Weeks
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Supplier Device Package :
- TO-220AB
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Pbfree Code :
- yes
- FET Feature :
- --
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Channel Type :
- N Channel
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- Tradename :
- HiPerFET
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 25A, 10V
- Width :
- 4.83 mm
- Qualification :
- -
- Product Status :
- Active
- Turn-Off Delay Time :
- 42 ns
- Transistor Type :
- 1 N-Channel
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 480W Tc
- Power Dissipation (Max) :
- 480W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 175 C
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Pulsed Drain Current-Max (IDM) :
- 450A
- Fall Time (Typ) :
- 31 ns
- Drain-source On Resistance-Max :
- 0.0064Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- Datasheets
- IXTP180N10T

N-Channel Tube 6.4m Ω @ 25A, 10V ±30V 6900pF @ 25V 151nC @ 10V 100V TO-220-3
IXTP180N10T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6900pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 180A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 42 ns.Peak drain current for this device is 450A, which is its maximum pulsed drain current.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP180N10T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 450A.
a 100V drain to source voltage (Vdss)
IXTP180N10T Applications
There are a lot of IXYS
IXTP180N10T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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