IXTP180N085T
- Mfr.Part #
- IXTP180N085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 180A TO220AB
- Stock
- 14,247
- In Stock :
- 14,247
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Obsolete
- Power Dissipation :
- 430W
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e3
- Rise Time :
- 70ns
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 25A, 10V
- Base Product Number :
- IXTP180
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 480A
- Series :
- TrenchMV™
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 180 A
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 85V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-220AB
- Continuous Drain Current (ID) :
- 180A
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max :
- 430W Tc
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS Corporation
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation (Max) :
- 430W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 65 ns
- DS Breakdown Voltage-Min :
- 85 V
- Surface Mount :
- No
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Voltage (Vdss) :
- 85V
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 430 W
- Turn-Off Delay Time :
- 55 ns
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Datasheets
- IXTP180N085T

N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V 85V TO-220-3
IXTP180N085T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=85V. And this device has 85V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 180 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 85 V in order to maintain normal operation.Operating this transistor requires a 85V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTP180N085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 480A.
a 85V drain to source voltage (Vdss)
IXTP180N085T Applications
There are a lot of IXYS
IXTP180N085T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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