IXTP180N085T

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Mfr.Part #
IXTP180N085T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 85V 180A TO220AB
Stock
14,247
In Stock :
14,247

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Obsolete
Power Dissipation :
430W
Terminal Form :
THROUGH-HOLE
JESD-609 Code :
e3
Rise Time :
70ns
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Mounting Type :
Through Hole
Number of Elements :
1
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Terminal Position :
Single
RoHS Status :
RoHS Compliant
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 25A, 10V
Base Product Number :
IXTP180
Published :
2006
Pulsed Drain Current-Max (IDM) :
480A
Series :
TrenchMV™
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Package / Case :
TO-220-3
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
180 A
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Pin Count :
3
Drain to Source Breakdown Voltage :
85V
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
ECCN Code :
EAR99
Drain-source On Resistance-Max :
0.0055Ohm
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
1000 mJ
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-220AB
Continuous Drain Current (ID) :
180A
Terminal Finish :
Matte Tin (Sn)
Power Dissipation-Max :
430W Tc
Reach Compliance Code :
Compliant
Manufacturer :
IXYS Corporation
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-220AB
Power Dissipation (Max) :
430W (Tc)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
65 ns
DS Breakdown Voltage-Min :
85 V
Surface Mount :
No
Operating Temperature :
-55°C~175°C TJ
JESD-30 Code :
R-PSFM-T3
Drain to Source Voltage (Vdss) :
85V
Transistor Application :
SWITCHING
Package :
Tube
Power Dissipation-Max (Abs) :
430 W
Turn-Off Delay Time :
55 ns
Qualification Status :
Not Qualified
Pbfree Code :
yes
Datasheets
IXTP180N085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP180N085T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXTP180N085T pinout, IXTP180N085T datasheet PDF, IXTP180N085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP180N085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP180N085T


N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V 85V TO-220-3

IXTP180N085T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 180A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=85V. And this device has 85V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 180 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 85 V in order to maintain normal operation.Operating this transistor requires a 85V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTP180N085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 480A.
a 85V drain to source voltage (Vdss)


IXTP180N085T Applications


There are a lot of IXYS
IXTP180N085T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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