IXTP170N075T2
- Mfr.Part #
- IXTP170N075T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 170A TO220AB
- Stock
- 11,181
- In Stock :
- 11,181
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.66 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXTP170
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 75V
- Published :
- 2008
- Element Configuration :
- Single
- Height :
- 16 mm
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.0054Ohm
- Power Dissipation :
- 360W
- Series :
- TrenchT2™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 170A
- Product Category :
- MOSFET
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 360W (Tc)
- Additional Feature :
- AVALANCHE RATED
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Manufacturer :
- IXYS
- Factory Lead Time :
- 24 Weeks
- Rds On (Max) @ Id, Vgs :
- 5.4m Ω @ 50A, 10V
- Rise Time :
- 11ns
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 360W Tc
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 75V
- Fall Time (Typ) :
- 19 ns
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 510A
- Turn-Off Delay Time :
- 25 ns
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Maximum Operating Temperature :
- + 175 C
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 109nC @ 10V
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Width :
- 4.83 mm
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Supplier Device Package :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Terminal Finish :
- TIN SILVER COPPER
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Type :
- TrenchT2 Power MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- JESD-609 Code :
- e1
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 6860pF @ 25V
- Package :
- Tube
- Channel Mode :
- Enhancement
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Datasheets
- IXTP170N075T2

N-Channel Tube 5.4m Ω @ 50A, 10V ±20V 6860pF @ 25V 109nC @ 10V 75V TO-220-3
IXTP170N075T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 600 mJ.A device's maximum input capacitance is 6860pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 170A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 510A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP170N075T2 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 510A.
a 75V drain to source voltage (Vdss)
IXTP170N075T2 Applications
There are a lot of IXYS
IXTP170N075T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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