IXTP15N50L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

DS Breakdown Voltage-Min :

500V

Pin Count :

3

Threshold Voltage :

2.5V

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

4.83 mm

Rds On (Max) @ Id, Vgs :

480m Ω @ 7.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

15 A

Type :

Linear L2 Power MOSFET

Product Category :

MOSFET

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4080pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTP15

Case Connection :

DRAIN

Power Dissipation :

300W

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

35 A

Length :

10.66 mm

Power Dissipation (Max) :

300W (Tc)

Number of Terminations :

3

FET Type :

N-Channel

Tradename :

Linear L2

Published :

2009

Packaging :

Tube

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Supplier Device Package :

TO-220AB

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Channel Mode :

Enhancement

MSL :

-

Power Dissipation-Max :

300W Tc

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

Product Status :

Active

Continuous Drain Current (ID) :

15A

Mounting Type :

Through Hole

Factory Lead Time :

24 Weeks

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Continuous Drain Current Id :

15A

Manufacturer :

IXYS

Channel Type :

N Channel

Terminal Form :

THROUGH-HOLE

Number of Elements :

1

Mount :

Through Hole

REACH SVHC :

No SVHC

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

300 W

Transistor Element Material :

SILICON

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.48Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Package / Case :

TO-220-3

Height :

16 mm

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Qualification Status :

Not Qualified

Qualification :

-

Rise Time :

73 ns

Avalanche Energy Rating (Eas) :

750 mJ

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

500V

Nominal Vgs :

2.5 V

Series :

Linear L2™

Number of Terminals :

3

RoHS :

Details

ECCN Code :

EAR99

Package Shape :

RECTANGULAR