IXTP152N085T
- Mfr.Part #
- IXTP152N085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 152A TO220AB
- Stock
- 9,643
- In Stock :
- 9,643
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- RoHS Status :
- RoHS Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.007Ohm
- Rise Time :
- 50ns
- Number of Terminations :
- 3
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 45 ns
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 360W (Tc)
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 85V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 85V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 50 ns
- DS Breakdown Voltage-Min :
- 85 V
- Continuous Drain Current (ID) :
- 152A
- Packaging :
- Tube
- Power Dissipation :
- 360W
- Product Status :
- Obsolete
- Pulsed Drain Current-Max (IDM) :
- 410A
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 360W Tc
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 152A Tc
- Base Product Number :
- IXTP152
- Series :
- TrenchMV™
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminals :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Mounting Type :
- Through Hole
- Published :
- 2006
- Datasheets
- IXTP152N085T

N-Channel Tube 7m Ω @ 25A, 10V ±20V 5500pF @ 25V 114nC @ 10V 85V TO-220-3
IXTP152N085T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5500pF @ 25V.This device conducts a continuous drain current (ID) of 152A, which is the maximum continuous current transistor can conduct.Using VGS=85V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 85V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 410A.A normal operation of the DS requires keeping the breakdown voltage above 85 V.This transistor requires a drain-source voltage (Vdss) of 85V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP152N085T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 152A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 410A.
a 85V drain to source voltage (Vdss)
IXTP152N085T Applications
There are a lot of IXYS
IXTP152N085T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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