IXTP14N60PM
- Mfr.Part #
- IXTP14N60PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A TO220
- Stock
- 13,243
- In Stock :
- 13,243
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Power Dissipation (Max) :
- 75W (Tc)
- Package :
- Tube
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 75W Tc
- Continuous Drain Current (ID) :
- 7A
- Pin Count :
- 3
- Number of Terminals :
- 3
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Base Product Number :
- IXTP14
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Case Connection :
- Isolated
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 7A
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.55Ohm
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 75 W
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220 Isolated Tab
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 600V
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- FET Feature :
- --
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 24 Weeks
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- Series :
- PolarHV™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Terminal Position :
- Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 42A
- Package Shape :
- RECTANGULAR
- Datasheets
- IXTP14N60PM

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IXTP14N60PM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 42A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP14N60PM Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTP14N60PM Applications
There are a lot of IXYS
IXTP14N60PM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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