IXTP14N60PM
- Mfr.Part #
- IXTP14N60PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A TO220
- Stock
- 13,243
- In Stock :
- 13,243
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 42A
- Factory Lead Time :
- 24 Weeks
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Position :
- Single
- Series :
- PolarHV™
- Power Dissipation (Max) :
- 75W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS Corporation
- Continuous Drain Current (ID) :
- 7A
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 900 mJ
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 600V
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.55Ohm
- Packaging :
- Tube
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220 Isolated Tab
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 7A
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 75W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 75 W
- Product Status :
- Active
- Base Product Number :
- IXTP14
- Pbfree Code :
- yes
- Datasheets
- IXTP14N60PM

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3 Full Pack, Isolated Tab
IXTP14N60PM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 900 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 42A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP14N60PM Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXTP14N60PM Applications
There are a lot of IXYS
IXTP14N60PM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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