IXTP14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Packaging :

Tube

Published :

2008

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

75W (Tc)

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-220 Isolated Tab

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

Compliant

Surface Mount :

No

Power Dissipation-Max (Abs) :

75 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.55Ohm

Mount :

Through Hole

Number of Terminals :

3

Power Dissipation-Max :

75W Tc

FET Feature :

--

FET Type :

N-Channel

Base Product Number :

IXTP14

Drain Current-Max (Abs) (ID) :

7A

Avalanche Energy Rating (Eas) :

900 mJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

7A

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Factory Lead Time :

24 Weeks

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Series :

PolarHV™

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Pbfree Code :

yes

Number of Terminations :

3

Manufacturer :

IXYS Corporation

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

42A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Terminal Form :

THROUGH-HOLE

Number of Elements :

1

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube