IXTP130N10T

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Mfr.Part #
IXTP130N10T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO220AB
Stock
14,120
In Stock :
14,120

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
44 ns
Vgs (Max) :
±30V
Power Dissipation-Max :
360W Tc
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 175 C
Mounting Style :
Through Hole
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
130A Tc
RoHS :
Details
Number of Channels :
1 Channel
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Transistor Type :
1 N-Channel
Qualification Status :
Not Qualified
Pin Count :
3
Avalanche Energy Rating (Eas) :
500 mJ
Drain to Source Breakdown Voltage :
100V
Configuration :
Single
JEDEC-95 Code :
TO-220AB
Reach Compliance Code :
Unknown
Product Type :
MOSFET
Mount :
Through Hole
Channel Mode :
Enhancement
Pbfree Code :
yes
Height :
9.15 mm
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Series :
TrenchMV™
Power Dissipation (Max) :
360W (Tc)
JESD-609 Code :
e3
Continuous Drain Current (ID) :
130A
Package / Case :
TO-220-3
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Terminal Finish :
PURE TIN
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 25A, 10V
Power Dissipation :
360W
Factory Lead Time :
24 Weeks
Fall Time (Typ) :
28 ns
FET Feature :
--
Number of Elements :
1
Width :
4.82 mm
Supplier Device Package :
TO-220AB
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Tradename :
HiPerFET
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
Published :
2008
Drain to Source Voltage (Vdss) :
100V
Drain-source On Resistance-Max :
0.0091Ohm
Rise Time :
47ns
Case Connection :
DRAIN
Mounting Type :
Through Hole
Brand :
IXYS
Base Product Number :
IXTP130
Packaging :
Tube
Number of Pins :
3
Transistor Element Material :
SILICON
Product Status :
Active
Length :
10.66 mm
Datasheets
IXTP130N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP130N10T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IXTP130N10T pinout, IXTP130N10T datasheet PDF, IXTP130N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP130N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP130N10T


N-Channel Tube 9.1m Ω @ 25A, 10V ±30V 5080pF @ 25V 104nC @ 10V 100V TO-220-3

IXTP130N10T Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5080pF @ 25V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTP130N10T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
a 100V drain to source voltage (Vdss)


IXTP130N10T Applications


There are a lot of IXYS
IXTP130N10T applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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