IXTP12N50PM
- Mfr.Part #
- IXTP12N50PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6A TO220AB
- Stock
- 472
- In Stock :
- 472
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Case Connection :
- Isolated
- Drain Current-Max (Abs) (ID) :
- 6A
- Package / Case :
- TO-220-3
- Base Product Number :
- IXTP12
- Mounting Type :
- Through Hole
- Series :
- Polar™
- Power Dissipation :
- 50W
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Package :
- Tube
- Voltage - Rated DC :
- 500V
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-220AB
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Power Dissipation (Max) :
- 50W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.5Ohm
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 6A, 10V
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 65 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Through Hole
- FET Feature :
- --
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Continuous Drain Current (ID) :
- 6A
- Fall Time (Typ) :
- 20 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 27ns
- Polarity/Channel Type :
- N-Channel
- Published :
- 2008
- DS Breakdown Voltage-Min :
- 500 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1830pF @ 25V
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 30 A
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 30V
- Current Rating :
- 12A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS Corporation
- Drain to Source Breakdown Voltage :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 50 W
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Surface Mount :
- No
- FET Type :
- N-Channel
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 50W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXTP12N50PM

N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V 500V TO-220-3
IXTP12N50PM Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 600 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1830pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 6A.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 30 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTP12N50PM Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30 A.
a 500V drain to source voltage (Vdss)
IXTP12N50PM Applications
There are a lot of IXYS
IXTP12N50PM applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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