IXTP12N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Power Dissipation (Max) :

200W (Tc)

Configuration :

Single

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

- 55 C

JESD-30 Code :

R-PSFM-T3

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

20 ns

Transistor Application :

SWITCHING

Tradename :

Polar

Drain Current-Max (Abs) (ID) :

12 A

Drain to Source Voltage (Vdss) :

500V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

600 mJ

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Product Category :

MOSFET

Reach Compliance Code :

Compliant

Package :

Tube

JESD-609 Code :

e3

Pin Count :

3

Drain-source On Resistance-Max :

0.5Ohm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

200W Tc

Pbfree Code :

yes

Mounting Type :

Through Hole

Element Configuration :

Single

Length :

10.66 mm

Number of Elements :

1

Mount :

Through Hole

Published :

2006

Number of Pins :

3

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Number of Terminations :

3

Supplier Device Package :

TO-220AB

Continuous Drain Current (ID) :

12A

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Transistor Polarity :

N-Channel

Rise Time :

27ns

Manufacturer :

IXYS

Type :

Polar Power MOSFET

Factory Lead Time :

24 Weeks

Package / Case :

TO-220-3

FET Feature :

--

Voltage - Rated DC :

500V

Base Product Number :

IXTP12

Height :

16 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Polar™

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

200W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

3

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

500V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

55 ns

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Package Shape :

RECTANGULAR

Current Rating :

12A

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

500 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

30 A

Product Status :

Active

Power Dissipation-Max (Abs) :

200 W

FET Type :

N-Channel

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Width :

4.83 mm

Brand :

IXYS