IXTP120N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

24 Weeks

ECCN Code :

EAR99

Power Dissipation-Max :

200W Tc

Mounting Style :

Through Hole

Packaging :

Tube

Height :

16 mm

Continuous Drain Current (ID) :

120A

RoHS :

Details

Brand :

IXYS

Terminal Position :

Single

Pbfree Code :

yes

Width :

4.83 mm

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0061Ohm

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

16 ns

Fall Time (Typ) :

11 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 25V

Drain Current-Max (Abs) (ID) :

120 A

Type :

TrenchT2 Power MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rise Time :

8ns

Product Status :

Active

Tradename :

HiPerFET

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.66 mm

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Surface Mount :

No

Number of Elements :

1

Pin Count :

3

Product Type :

MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

JESD-609 Code :

e3

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

40V

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 25A, 10V

Base Product Number :

IXTP120

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Manufacturer :

IXYS

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1 Channel

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

40 V

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Series :

TrenchT2™

Power Dissipation-Max (Abs) :

200 W

Configuration :

Single

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation :

200W

Pulsed Drain Current-Max (IDM) :

360A

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Power Dissipation (Max) :

200W (Tc)

Avalanche Energy Rating (Eas) :

400 mJ

Maximum Operating Temperature :

+ 175 C

Terminal Finish :

Matte Tin (Sn)

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Lead Free :

Lead Free

Package :

Tube

FET Feature :

--

Published :

2008

Number of Terminations :

3

Package / Case :

TO-220-3

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Type :

1 N-Channel

Number of Terminals :

3

Supplier Device Package :

TO-220AB

Additional Feature :

AVALANCHE RATED