IXTP110N055T2

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Mfr.Part #
IXTP110N055T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 55V 110A TO220AB
Stock
1,872
In Stock :
1,872

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
10.66 mm
Series :
TrenchT2™
Width :
4.83 mm
Number of Channels :
1 Channel
Brand :
IXYS
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.0066Ohm
Transistor Application :
SWITCHING
Base Product Number :
IXTP110
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
55V
Product Category :
MOSFET
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
57nC @ 10V
Mount :
Through Hole
Power Dissipation :
180W
Power Dissipation (Max) :
180W (Tc)
Rds On (Max) @ Id, Vgs :
6.6m Ω @ 25A, 10V
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
3060pF @ 25V
FET Feature :
--
Gate to Source Voltage (Vgs) :
20V
Package :
Tube
Tradename :
HiPerFET
Supplier Device Package :
TO-220AB
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
40 ns
Package / Case :
TO-220-3
Manufacturer :
IXYS
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
23 ns
Pulsed Drain Current-Max (IDM) :
300A
Rise Time :
25ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Subcategory :
MOSFETs
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
55 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 175 C
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Published :
2008
Package Shape :
RECTANGULAR
Terminal Finish :
Matte Tin (Sn)
Height :
9.15 mm
Packaging :
Tube
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
400 mJ
Minimum Operating Temperature :
- 55 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Drain to Source Breakdown Voltage :
55V
Qualification Status :
Not Qualified
Terminal Position :
Single
Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
24 Weeks
ECCN Code :
EAR99
Product Status :
Active
Power Dissipation-Max :
180W Tc
Operating Temperature :
-55°C~175°C TJ
Continuous Drain Current (ID) :
110A
Pbfree Code :
yes
Surface Mount :
No
Transistor Element Material :
SILICON
Number of Terminations :
3
Lead Free :
Lead Free
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Type :
MOSFET
Mounting Style :
Through Hole
Channel Mode :
Enhancement
Pin Count :
3
Datasheets
IXTP110N055T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP110N055T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, IXTP110N055T2 pinout, IXTP110N055T2 datasheet PDF, IXTP110N055T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP110N055T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP110N055T2


N-Channel Tube 6.6m Ω @ 25A, 10V ±20V 3060pF @ 25V 57nC @ 10V 55V TO-220-3

IXTP110N055T2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 400 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3060pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 110A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Peak drain current is 300A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 55 V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTP110N055T2 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 300A.
a 55V drain to source voltage (Vdss)


IXTP110N055T2 Applications


There are a lot of IXYS
IXTP110N055T2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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