IXTP110N055T
- Mfr.Part #
- IXTP110N055T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 110A TO220AB
- Stock
- 2,823
- In Stock :
- 2,823
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Supplier Device Package :
- TO-220AB
- Continuous Drain Current (ID) :
- 110A
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 55 V
- Transistor Application :
- SWITCHING
- Drain to Source Resistance :
- 7 mΩ
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Series :
- TrenchMV™
- Pulsed Drain Current-Max (IDM) :
- 300A
- Drain to Source Voltage (Vdss) :
- 55V
- Max Power Dissipation :
- 230 W
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Manufacturer :
- IXYS Corporation
- Max Operating Temperature :
- 175 °C
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Tube
- Surface Mount :
- No
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3080pF @ 25V
- Power Dissipation :
- 230W
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Power Dissipation-Max :
- 230W Tc
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Input Capacitance :
- 3.08 nF
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- 230W (Tc)
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- RoHS :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXTP110
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 40 ns
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 55V
- Package Shape :
- RECTANGULAR
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Package / Case :
- TO-220-3
- Fall Time (Typ) :
- 24 ns
- Min Operating Temperature :
- -55 °C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max :
- 7 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Number of Terminals :
- 3
- Rise Time :
- 30ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.007Ohm
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTP110N055T

N-Channel Tube 7m Ω @ 25A, 10V ±20V 3080pF @ 25V 67nC @ 10V 55V TO-220-3
IXTP110N055T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 750 mJ.A device's maximal input capacitance is 3080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 7 mΩ.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55 V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP110N055T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 7 mΩ
a 55V drain to source voltage (Vdss)
IXTP110N055T Applications
There are a lot of IXYS
IXTP110N055T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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