IXTP110N055T

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Mfr.Part #
IXTP110N055T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 55V 110A TO220AB
Stock
2,823
In Stock :
2,823

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-220AB
Continuous Drain Current (ID) :
110A
Terminal Position :
Single
DS Breakdown Voltage-Min :
55 V
Transistor Application :
SWITCHING
Drain to Source Resistance :
7 mΩ
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Series :
TrenchMV™
Pulsed Drain Current-Max (IDM) :
300A
Drain to Source Voltage (Vdss) :
55V
Max Power Dissipation :
230 W
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
Number of Terminations :
3
Manufacturer :
IXYS Corporation
Max Operating Temperature :
175 °C
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Surface Mount :
No
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3080pF @ 25V
Power Dissipation :
230W
Avalanche Energy Rating (Eas) :
750 mJ
Power Dissipation-Max :
230W Tc
ECCN Code :
EAR99
Pbfree Code :
yes
Input Capacitance :
3.08 nF
Vgs(th) (Max) @ Id :
4V @ 100µA
Mount :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation (Max) :
230W (Tc)
Element Configuration :
Single
Vgs (Max) :
±20V
RoHS :
Compliant
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXTP110
Mounting Type :
Through Hole
Turn-Off Delay Time :
40 ns
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Active
Drain to Source Breakdown Voltage :
55V
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs :
67nC @ 10V
Package / Case :
TO-220-3
Fall Time (Typ) :
24 ns
Min Operating Temperature :
-55 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On Max :
7 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2006
Number of Elements :
1
Case Connection :
DRAIN
Number of Terminals :
3
Rise Time :
30ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
JESD-609 Code :
e3
Drain-source On Resistance-Max :
0.007Ohm
Polarity/Channel Type :
N-Channel
Datasheets
IXTP110N055T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP110N055T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP110N055T pinout, IXTP110N055T datasheet PDF, IXTP110N055T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP110N055T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP110N055T


N-Channel Tube 7m Ω @ 25A, 10V ±20V 3080pF @ 25V 67nC @ 10V 55V TO-220-3

IXTP110N055T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 750 mJ.A device's maximal input capacitance is 3080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 7 mΩ.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55 V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP110N055T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 7 mΩ
a 55V drain to source voltage (Vdss)


IXTP110N055T Applications


There are a lot of IXYS
IXTP110N055T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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