IXTP110N055P

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Mfr.Part #
IXTP110N055P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 55V 110A TO220AB
Stock
10,694
In Stock :
10,694

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
5.5V @ 250µA
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
250A
DS Breakdown Voltage-Min :
55 V
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
PolarHT™
Turn-Off Delay Time :
66 ns
Reach Compliance Code :
Compliant
Rise Time :
53ns
Input Capacitance (Ciss) (Max) @ Vds :
2210pF @ 25V
Package / Case :
TO-220-3
Base Product Number :
IXTP110
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.0135 Ω
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS Corporation
Pin Count :
3
Power Dissipation :
390W
RoHS Status :
ROHS3 Compliant
Length :
10.66mm
Drain to Source Voltage (Vdss) :
55V
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
76nC @ 10V
JEDEC-95 Code :
TO-220AB
Terminal Position :
Single
Packaging :
Tube
Case Connection :
DRAIN
Product Status :
Active
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
390W Tc
Transistor Element Material :
SILICON
Width :
4.83mm
Mount :
Through Hole
Power Dissipation (Max) :
390W (Tc)
Drain to Source Breakdown Voltage :
55V
Published :
2006
Qualification Status :
Not Qualified
Turn On Delay Time :
27 ns
Height :
9.15mm
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
45 ns
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1000 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
THROUGH-HOLE
Package :
Tube
Number of Pins :
3
ECCN Code :
EAR99
FET Feature :
--
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current (ID) :
110A
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
13.5m Ω @ 500mA, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Datasheets
IXTP110N055P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP110N055P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, IXTP110N055P pinout, IXTP110N055P datasheet PDF, IXTP110N055P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP110N055P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP110N055P


N-Channel Tube 13.5m Ω @ 500mA, 10V ±20V 2210pF @ 25V 76nC @ 10V 55V TO-220-3

IXTP110N055P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2210pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 110A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 66 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 250A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 27 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55 V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTP110N055P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 55V drain to source voltage (Vdss)


IXTP110N055P Applications


There are a lot of IXYS
IXTP110N055P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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