IXTN90N25L2

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Mfr.Part #
IXTN90N25L2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 250V 90A SOT227B
Stock
451
In Stock :
451

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Packaging :
Tube
Number of Elements :
1
Manufacturer :
IXYS
Pin Count :
4
Published :
2009
Number of Terminals :
4
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
90A
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Vgs (Max) :
±20V
Lead Free :
Lead Free
Power Dissipation :
735W
Factory Lead Time :
28 Weeks
Number of Terminations :
4
Terminal Position :
UPPER
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Mounting Style :
Chassis Mount
Base Product Number :
IXTN90
Element Configuration :
Single
Series :
Linear L2™
Gate Charge (Qg) (Max) @ Vgs :
640nC @ 10V
Supplier Device Package :
SOT-227B
Product Status :
Active
Terminal Finish :
Nickel (Ni)
FET Feature :
--
Surface Mount :
No
Case Connection :
Isolated
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Mount :
Chassis Mount
ECCN Code :
EAR99
Resistance :
33mOhm
Avalanche Energy Rating (Eas) :
3000 mJ
Power Dissipation-Max (Abs) :
735 W
Number of Pins :
4
Drain to Source Breakdown Voltage :
250V
Product Category :
Discrete Semiconductor Modules
Mounting Type :
Chassis Mount
Gate to Source Voltage (Vgs) :
20V
Brand :
IXYS
Configuration :
Single
Pbfree Code :
yes
Power Dissipation-Max :
735W Tc
Product Type :
Discrete Semiconductor Modules
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Package / Case :
SOT-227-4, miniBLOC
Terminal Form :
UNSPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Power Dissipation (Max) :
735W (Tc)
Package :
Tube
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
360A
Type :
Linear Power MOSFET
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PUFM-X4
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Maximum Operating Temperature :
+ 150 C
Product :
Power MOSFET Modules
Drain-source On Resistance-Max :
0.033 Ω
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
90 A
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
250 V
Datasheets
IXTN90N25L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN90N25L2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:4, Number of Pins:4, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Type:Linear Power MOSFET, Operating Temperature:-55°C~150°C TJ, IXTN90N25L2 pinout, IXTN90N25L2 datasheet PDF, IXTN90N25L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN90N25L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN90N25L2


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 23000pF @ 25V 640nC @ 10V 250V SOT-227-4, miniBLOC

IXTN90N25L2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 23000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.As shown in the table below, the drain current of this device is 90 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 360A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTN90N25L2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 360A.
a 250V drain to source voltage (Vdss)


IXTN90N25L2 Applications


There are a lot of IXYS
IXTN90N25L2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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