IXTN90N25L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Linear L2™

Power Dissipation :

735W

JESD-30 Code :

R-PUFM-X4

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Avalanche Energy Rating (Eas) :

3000 mJ

Manufacturer :

IXYS

Packaging :

Tube

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Rds On (Max) @ Id, Vgs :

33m Ω @ 500mA, 10V

Published :

2009

DS Breakdown Voltage-Min :

250 V

Package Shape :

RECTANGULAR

Number of Terminals :

4

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTN90

Factory Lead Time :

28 Weeks

Mounting Style :

Chassis Mount

Mount :

Chassis Mount

Drain to Source Breakdown Voltage :

250V

Package / Case :

SOT-227-4, miniBLOC

Product :

Power MOSFET Modules

Power Dissipation-Max (Abs) :

735 W

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

Brand :

IXYS

Drain to Source Voltage (Vdss) :

250V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

90 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

360A

Package :

Tube

Resistance :

33mOhm

Number of Pins :

4

RoHS :

Details

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Product Type :

Discrete Semiconductor Modules

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Reach Compliance Code :

Compliant

Configuration :

Single

Terminal Finish :

Nickel (Ni)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

SOT-227B

Transistor Polarity :

N-Channel

FET Feature :

--

Terminal Form :

UNSPECIFIED

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Product Category :

Discrete Semiconductor Modules

Mounting Type :

Chassis Mount

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Case Connection :

Isolated

Vgs (Max) :

±20V

Pin Count :

4

Power Dissipation (Max) :

735W (Tc)

Type :

Linear Power MOSFET

Gate Charge (Qg) (Max) @ Vgs :

640nC @ 10V

Power Dissipation-Max :

735W Tc

Drain-source On Resistance-Max :

0.033 Ω

Continuous Drain Current (ID) :

90A

Terminal Position :

UPPER

Number of Elements :

1