IXTN21N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

50ns

JESD-30 Code :

R-PUFM-X4

Terminal Position :

UPPER

Case Connection :

Isolated

Package / Case :

SOT-227-4, miniBLOC

Drain to Source Voltage (Vdss) :

1000V

HTS Code :

8541.29.00.95

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.55 Ω

Number of Terminals :

4

Package :

Tube

Published :

2000

Supplier Device Package :

SOT-227B

Terminal Form :

UNSPECIFIED

Series :

MegaMOS™

Pin Count :

4

Rds On (Max) @ Id, Vgs :

550m Ω @ 500mA, 10V

Power Dissipation (Max) :

520W (Tc)

Turn-Off Delay Time :

100 ns

Number of Pins :

3

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Current Rating :

21A

Power Dissipation :

520W

Mounting Type :

Chassis Mount

Threshold Voltage :

4.5V

DS Breakdown Voltage-Min :

1000 V

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTN21

Lead Free :

Lead Free

Product Status :

Active

Continuous Drain Current (ID) :

21A

Power Dissipation-Max :

520W Tc

REACH SVHC :

No SVHC

Fall Time (Typ) :

40 ns

Power Dissipation Ambient-Max :

520 W

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Resistance :

550mOhm

Drain to Source Breakdown Voltage :

1kV

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Manufacturer :

IXYS Corporation

Packaging :

Tube

Number of Terminations :

4

Dual Supply Voltage :

1kV

Power Dissipation-Max (Abs) :

520 W

Drain Current-Max (Abs) (ID) :

21 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Voltage - Rated DC :

1kV

Pulsed Drain Current-Max (IDM) :

84A

Mount :

Chassis Mount

Vgs(th) (Max) @ Id :

4.5V @ 500μA

Nominal Vgs :

4.5 V

Number of Elements :

1

Transistor Element Material :

SILICON