IXTN170P10P
- Mfr.Part #
- IXTN170P10P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 170A SOT227B
- Stock
- 223
- In Stock :
- 223
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTN170
- Packaging :
- Tube
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 890W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Mount :
- Chassis Mount, Screw
- Supplier Device Package :
- SOT-227B
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Minimum Operating Temperature :
- - 55 C
- Factory Lead Time :
- 28 Weeks
- Product Status :
- Active
- Manufacturer :
- IXYS
- Published :
- 2009
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Terminations :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Mounting Style :
- Chassis Mount
- Terminal Finish :
- Nickel (Ni)
- Brand :
- IXYS
- Tradename :
- PolarP
- Product :
- Power MOSFET Modules
- Pbfree Code :
- yes
- Product Type :
- Discrete Semiconductor Modules
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS :
- Details
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 12600pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- Discrete Semiconductor Modules
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- Continuous Drain Current (ID) :
- 170A
- Power Dissipation (Max) :
- 890W (Tc)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Terminal Position :
- UPPER
- Pin Count :
- 4
- Series :
- PolarP™
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Type :
- Polar Power MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- Power Dissipation :
- 890W
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXTN170P10P

P-Channel Tube 12m Ω @ 500mA, 10V ±20V 12600pF @ 25V 240nC @ 10V 100V SOT-227-4, miniBLOC
IXTN170P10P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTN170P10P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 170A
a 100V drain to source voltage (Vdss)
IXTN170P10P Applications
There are a lot of IXYS
IXTN170P10P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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