IXTN170P10P
- Mfr.Part #
- IXTN170P10P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 170A SOT227B
- Stock
- 223
- In Stock :
- 223
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXTN170
- Terminal Finish :
- Nickel (Ni)
- Manufacturer :
- IXYS
- Pin Count :
- 4
- Power Dissipation (Max) :
- 890W (Tc)
- Package :
- Tube
- Tradename :
- PolarP
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Pins :
- 4
- Power Dissipation :
- 890W
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Mounting Type :
- Chassis Mount
- Radiation Hardening :
- No
- Product :
- Power MOSFET Modules
- Product Type :
- Discrete Semiconductor Modules
- Number of Terminations :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 500mA, 10V
- Supplier Device Package :
- SOT-227B
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- UNSPECIFIED
- Terminal Position :
- UPPER
- Series :
- PolarP™
- Input Capacitance (Ciss) (Max) @ Vds :
- 12600pF @ 25V
- Product Status :
- Active
- Type :
- Polar Power MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- FET Feature :
- --
- Product Category :
- Discrete Semiconductor Modules
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Style :
- Chassis Mount
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Mount :
- Chassis Mount, Screw
- Number of Elements :
- 1
- Published :
- 2009
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 890W Tc
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 28 Weeks
- Continuous Drain Current (ID) :
- 170A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Datasheets
- IXTN170P10P

P-Channel Tube 12m Ω @ 500mA, 10V ±20V 12600pF @ 25V 240nC @ 10V 100V SOT-227-4, miniBLOC
IXTN170P10P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 170A amps.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTN170P10P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 170A
a 100V drain to source voltage (Vdss)
IXTN170P10P Applications
There are a lot of IXYS
IXTN170P10P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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