IXTN320N10T
- Mfr.Part #
- IXTN320N10T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 320A SOT-227B
- Stock
- 35,871
- In Stock :
- 35,871
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PUFM-X4
- Pbfree Code :
- yes
- Power Dissipation-Max (Abs) :
- 680 W
- Mounting Style :
- Chassis Mount
- DS Breakdown Voltage-Min :
- 100V
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Case Connection :
- Isolated
- RoHS :
- Compliant
- Terminal Finish :
- Nickel (Ni)
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Terminal Position :
- UPPER
- Other Names :
- IXTH320N10T Q3347867
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 2300 mJ
- Package / Case :
- SOT-227-4, miniBLOC
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Obsolete
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 320A
- Power Dissipation (Max) :
- 680W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 320A Tc
- Manufacturer :
- IXYS
- Mount :
- Chassis Mount
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminals :
- 4
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Drain Current-Max (Abs) (ID) :
- 320 A
- Product Type :
- Discrete Semiconductor Modules
- Number of Pins :
- 4
- Base Product Number :
- IXTN320
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Published :
- 2009
- Number of Terminations :
- 4
- Reach Compliance Code :
- Compliant
- Terminal Form :
- UNSPECIFIED
- Series :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0032Ohm
- Product Category :
- Discrete Semiconductor Modules
- Power Dissipation-Max :
- 680W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Chassis Mount
- Pulsed Drain Current-Max (IDM) :
- 700A
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature (Max) :
- 175°C
- Supplier Device Package :
- SOT-227B
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -
- Packaging :
- Tube
- FET Feature :
- -
- RoHS Status :
- RoHS Compliant
- Datasheets
- IXTN320N10T

N-Channel Tube - ±20V 100V SOT-227-4, miniBLOC
IXTN320N10T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2300 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 320A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 320 A.Peak drain current is 700A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTN320N10T Features
the avalanche energy rating (Eas) is 2300 mJ
a continuous drain current (ID) of 320A
based on its rated peak drain current 700A.
a 100V drain to source voltage (Vdss)
IXTN320N10T Applications
There are a lot of IXYS
IXTN320N10T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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