IXTN17N120L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Package / Case :

SOT-227-4, miniBLOC

Pbfree Code :

yes

Length :

38.23 mm

Number of Terminals :

4

Brand :

IXYS

Reach Compliance Code :

Unknown

Case Connection :

Isolated

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Product Status :

Active

Fall Time (Typ) :

83 ns

Pulsed Drain Current-Max (IDM) :

30A

Turn-Off Delay Time :

110 ns

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Series :

--

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Power Dissipation (Max) :

540W (Tc)

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 15V

Resistance :

900mOhm

Input Capacitance (Ciss) (Max) @ Vds :

8300pF @ 25V

Transistor Polarity :

N-Channel

Mounting Type :

Chassis Mount

Rise Time :

31ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Type :

Linear Power MOSFET

Published :

2010

Drain-source On Resistance-Max :

0.99 Ω

Minimum Operating Temperature :

- 55 C

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Power Dissipation-Max (Abs) :

540 W

Drain to Source Breakdown Voltage :

1.2kV

JESD-30 Code :

R-PUFM-X4

Lead Free :

Lead Free

Base Product Number :

IXTN17

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product :

Power MOSFET Modules

Power Dissipation-Max :

540W Tc

Product Category :

Discrete Semiconductor Modules

Product Type :

Discrete Semiconductor Modules

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

IXYS

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

20V

Drain Current-Max (Abs) (ID) :

17A

Avalanche Energy Rating (Eas) :

1500 mJ

Continuous Drain Current (ID) :

15A

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Height :

12.22 mm

Rds On (Max) @ Id, Vgs :

900m Ω @ 8.5A, 20V

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

1200V

Terminal Position :

UPPER

Vgs (Max) :

±30V

Package Shape :

RECTANGULAR

Terminal Finish :

Nickel

Width :

25.42 mm

Packaging :

Tube

Mounting Style :

Chassis Mount

DS Breakdown Voltage-Min :

1200 V

Mount :

Chassis Mount

Factory Lead Time :

24 Weeks

Tradename :

Linear

Power Dissipation :

540W

Supplier Device Package :

SOT-227B

Maximum Operating Temperature :

+ 150 C