IXTN32P60P
- Mfr.Part #
- IXTN32P60P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 600V 32A SOT227B
- Stock
- 228
- In Stock :
- 228
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 11100pF @ 25V
- Drain to Source Voltage (Vdss) :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Chassis Mount
- Mounting Style :
- Chassis Mount
- Supplier Device Package :
- SOT-227B
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 890W Tc
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- Isolated
- Drain Current-Max (Abs) (ID) :
- 32 A
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Package :
- Tube
- Rise Time :
- 27ns
- Base Product Number :
- IXTN32
- Product :
- Power MOSFET Modules
- Terminal Position :
- UPPER
- Continuous Drain Current (ID) :
- 32A
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.35Ohm
- Number of Channels :
- 1 Channel
- Published :
- 2008
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- Discrete Semiconductor Modules
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 95 ns
- Polarity/Channel Type :
- P-Channel
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 28 Weeks
- Terminal Finish :
- Nickel (Ni)
- Drain to Source Breakdown Voltage :
- 600V
- Number of Terminals :
- 4
- Power Dissipation (Max) :
- 890W (Tc)
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Product Type :
- Discrete Semiconductor Modules
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 500mA, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 890W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs) :
- 890 W
- DS Breakdown Voltage-Min :
- 600 V
- Series :
- PolarP™
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Surface Mount :
- No
- Package / Case :
- SOT-227-4, miniBLOC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 33 ns
- Type :
- Polar Power MOSFET
- Pbfree Code :
- yes
- Pin Count :
- 4
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Packaging :
- Tube
- JESD-30 Code :
- R-PUFM-X4
- Pulsed Drain Current-Max (IDM) :
- 96A
- Terminal Form :
- UNSPECIFIED
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 4
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 196nC @ 10V
- Datasheets
- IXTN32P60P

P-Channel Tube 350m Ω @ 500mA, 10V ±20V 11100pF @ 25V 196nC @ 10V 600V SOT-227-4, miniBLOC
IXTN32P60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 95 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTN32P60P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 96A.
a 600V drain to source voltage (Vdss)
IXTN32P60P Applications
There are a lot of IXYS
IXTN32P60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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