IXTN32P60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

27ns

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

RoHS :

Details

Polarity/Channel Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Style :

Chassis Mount

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Terminal Finish :

Nickel (Ni)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

890 W

FET Type :

P-Channel

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

600 V

Published :

2008

Number of Terminals :

4

Brand :

IXYS

JESD-30 Code :

R-PUFM-X4

Mounting Type :

Chassis Mount

Transistor Polarity :

P-Channel

Rds On (Max) @ Id, Vgs :

350m Ω @ 500mA, 10V

Factory Lead Time :

28 Weeks

Terminal Position :

UPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

196nC @ 10V

Pin Count :

4

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

96A

Power Dissipation-Max :

890W Tc

Case Connection :

Isolated

Type :

Polar Power MOSFET

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Number of Terminations :

4

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

Continuous Drain Current (ID) :

32A

Base Product Number :

IXTN32

Series :

PolarP™

Drain Current-Max (Abs) (ID) :

32 A

Package :

Tube

Mount :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Package / Case :

SOT-227-4, miniBLOC

Number of Elements :

1

Drain-source On Resistance-Max :

0.35Ohm

Manufacturer :

IXYS

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Power Dissipation :

890W

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Turn-Off Delay Time :

95 ns

Supplier Device Package :

SOT-227B

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

Discrete Semiconductor Modules

Product :

Power MOSFET Modules

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

33 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

890W (Tc)

Product Category :

Discrete Semiconductor Modules

Avalanche Energy Rating (Eas) :

3500 mJ

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

FET Feature :

--

Drain to Source Breakdown Voltage :

600V

Maximum Operating Temperature :

+ 150 C