IXTN32P60P
- Mfr.Part #
- IXTN32P60P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 600V 32A SOT227B
- Stock
- 228
- In Stock :
- 228
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 890W (Tc)
- Drain Current-Max (Abs) (ID) :
- 32 A
- Case Connection :
- Isolated
- Pulsed Drain Current-Max (IDM) :
- 96A
- Drain-source On Resistance-Max :
- 0.35Ohm
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 28 Weeks
- Transistor Application :
- SWITCHING
- Package / Case :
- SOT-227-4, miniBLOC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- SOT-227B
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel (Ni)
- DS Breakdown Voltage-Min :
- 600 V
- Mounting Type :
- Chassis Mount
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Minimum Operating Temperature :
- - 55 C
- Series :
- PolarP™
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 11100pF @ 25V
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Product Type :
- Discrete Semiconductor Modules
- Power Dissipation :
- 890W
- RoHS :
- Details
- Product :
- Power MOSFET Modules
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Brand :
- IXYS
- Number of Terminations :
- 4
- Number of Channels :
- 1 Channel
- Mount :
- Chassis Mount
- Turn-Off Delay Time :
- 95 ns
- Terminal Form :
- UNSPECIFIED
- Package :
- Tube
- Number of Elements :
- 1
- Rise Time :
- 27ns
- Mounting Style :
- Chassis Mount
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 32A
- Transistor Polarity :
- P-Channel
- Product Category :
- Discrete Semiconductor Modules
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 33 ns
- Base Product Number :
- IXTN32
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2008
- Terminal Position :
- UPPER
- Polarity/Channel Type :
- P-Channel
- Number of Terminals :
- 4
- Reach Compliance Code :
- Compliant
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 600V
- JESD-30 Code :
- R-PUFM-X4
- Power Dissipation-Max (Abs) :
- 890 W
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Type :
- Polar Power MOSFET
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 500mA, 10V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 890W Tc
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 196nC @ 10V
- Datasheets
- IXTN32P60P
IXTN32P60P Documents

P-Channel Tube 350m Ω @ 500mA, 10V ±20V 11100pF @ 25V 196nC @ 10V 600V SOT-227-4, miniBLOC
IXTN32P60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 32 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 95 ns.Peak drain current is 96A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTN32P60P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 96A.
a 600V drain to source voltage (Vdss)
IXTN32P60P Applications
There are a lot of IXYS
IXTN32P60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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