IXTN30N100L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

30 A

Product :

Power MOSFET Modules

Vgs (Max) :

±30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

1000V

Width :

25.07 mm

Radiation Hardening :

No

Product Category :

Discrete Semiconductor Modules

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

FET Type :

N-Channel

Base Product Number :

IXTN30

Gate Charge (Qg) (Max) @ Vgs :

545nC @ 20V

Mount :

Chassis Mount, Screw

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

Chassis Mount

Number of Terminations :

4

Polarity/Channel Type :

N-Channel

Package :

Bulk

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation-Max (Abs) :

800 W

Minimum Operating Temperature :

- 55 C

Published :

2010

Pulsed Drain Current-Max (IDM) :

70A

Series :

--

Terminal Form :

UNSPECIFIED

Power Dissipation-Max :

800W Tc

Height :

9.6 mm

Reach Compliance Code :

Compliant

Package / Case :

SOT-227-4, miniBLOC

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Pin Count :

4

FET Feature :

--

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Power Dissipation :

800W

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

1000 V

Length :

38.2 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 150 C

Resistance :

450mOhm

RoHS :

Details

Terminal Finish :

Nickel (Ni)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

450m Ω @ 15A, 20V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

30A

Supplier Device Package :

SOT-227B

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2000 mJ

Qualification Status :

Not Qualified

Number of Pins :

4

JESD-30 Code :

R-PUFM-X4

Power Dissipation (Max) :

800W (Tc)

Drain to Source Breakdown Voltage :

1kV

Terminal Position :

UPPER

Type :

Linear Power MOSFET

Number of Terminals :

4

Drain-source On Resistance-Max :

0.45 Ω

Drive Voltage (Max Rds On,Min Rds On) :

20V

Product Status :

Active

Product Type :

Discrete Semiconductor Modules

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

Brand :

IXYS

Turn-Off Delay Time :

100 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Fall Time (Typ) :

78 ns

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Mounting Type :

Chassis Mount

Rise Time :

70ns