IXTN22N100L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1500 mJ

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

80 ns

Additional Feature :

UL RECOGNIZED

Drain-source On Resistance-Max :

0.6 Ω

Drive Voltage (Max Rds On,Min Rds On) :

20V

Resistance :

600mOhm

Packaging :

Tube

Number of Terminals :

4

Fall Time (Typ) :

50 ns

Power Dissipation :

700W

Number of Terminations :

4

Length :

38.2mm

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

FET Type :

N-Channel

Terminal Finish :

Nickel (Ni)

Transistor Polarity :

N-Channel

Drain to Source Breakdown Voltage :

1kV

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

22 A

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Case Connection :

Isolated

Mount :

Chassis Mount, Panel

Height :

9.6mm

Rise Time :

35ns

RoHS :

Details

Brand :

IXYS

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

50A

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Mounting Type :

Chassis Mount

Turn On Delay Time :

36 ns

Manufacturer :

IXYS

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Published :

2010

Number of Channels :

1 Channel

Element Configuration :

Single

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Number of Pins :

4

Package / Case :

SOT-227-4, miniBLOC

Terminal Form :

UNSPECIFIED

Vgs (Max) :

±30V

Pin Count :

4

Product Category :

Discrete Semiconductor Modules

Power Dissipation-Max (Abs) :

700 W

Number of Elements per Chip :

1

Minimum Operating Temperature :

-55 °C

Power Dissipation (Max) :

700W (Tc)

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Mounting Style :

Chassis Mount

Width :

25.07mm

Product :

Power MOSFET Modules

Continuous Drain Current (ID) :

22A

DS Breakdown Voltage-Min :

1000 V

Base Product Number :

IXTN22

Series :

--

FET Feature :

--

Package :

Tube

Product Type :

Discrete Semiconductor Modules

Supplier Device Package :

SOT-227B

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Type :

SOT-227

Maximum Operating Temperature :

+150 °C

Drain to Source Voltage (Vdss) :

1000V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Type :

N

Number of Elements :

1

JESD-30 Code :

R-PUFM-X4

Type :

Linear Power MOSFET

Rds On (Max) @ Id, Vgs :

600m Ω @ 11A, 20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7050pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

700W Tc