IXTN200N10L2

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Mfr.Part #
IXTN200N10L2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 100V 178A SOT227B
Stock
779
In Stock :
779

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Bulk
Base Product Number :
IXTN200
Drain-source On Resistance-Max :
0.011 Ω
Product :
Power MOSFET Modules
Height :
9.6mm
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
178 A
Drain to Source Breakdown Voltage :
100V
Mounting Type :
Chassis Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+150 °C
Rds On (Max) @ Id, Vgs :
11m Ω @ 100A, 10V
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
178A
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Minimum Operating Temperature :
-55 °C
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Channel Mode :
Enhancement
Power Dissipation :
830W
Case Connection :
Isolated
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Nickel
Packaging :
Bulk
Power Dissipation-Max :
830W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
500A
Power Dissipation-Max (Abs) :
830 W
ECCN Code :
EAR99
Channel Type :
N
Type :
Linear Power MOSFET
Supplier Device Package :
SOT-227B
Product Status :
Active
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
178A Tc
Number of Terminals :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
28 Weeks
Length :
38.23mm
Mounting Style :
Chassis Mount
Mount :
Chassis Mount
Manufacturer :
IXYS
Power Dissipation (Max) :
830W (Tc)
Surface Mount :
No
Number of Elements per Chip :
1
Number of Channels :
1 Channel
Number of Pins :
4
Terminal Position :
UPPER
Package Type :
SOT-227
Vgs (Max) :
±20V
Reach Compliance Code :
Unknown
Gate Charge (Qg) (Max) @ Vgs :
540nC @ 10V
Transistor Application :
SWITCHING
FET Feature :
--
Package / Case :
SOT-227-4, miniBLOC
Width :
25.07mm
Configuration :
SINGLE WITH BUILT-IN DIODE
Brand :
IXYS
Product Category :
Discrete Semiconductor Modules
RoHS :
Details
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
100 V
Terminal Form :
UNSPECIFIED
Number of Elements :
1
Number of Terminations :
4
Published :
2010
JESD-30 Code :
R-PUFM-X4
Transistor Element Material :
SILICON
Pin Count :
4
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Product Type :
Discrete Semiconductor Modules
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
5000 mJ
Resistance :
11mOhm
Series :
Linear L2™
Datasheets
IXTN200N10L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10L2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Type:Linear Power MOSFET, Number of Channels:1 Channel, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, IXTN200N10L2 pinout, IXTN200N10L2 datasheet PDF, IXTN200N10L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN200N10L2


N-Channel Bulk 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V SOT-227-4, miniBLOC

IXTN200N10L2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [178A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 178 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTN200N10L2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 178A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)


IXTN200N10L2 Applications


There are a lot of IXYS
IXTN200N10L2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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