IXTN200N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

178A Tc

Power Dissipation (Max) :

830W (Tc)

Package / Case :

SOT-227-4, miniBLOC

Number of Terminals :

4

JESD-30 Code :

R-PUFM-X4

Surface Mount :

No

Resistance :

11mOhm

Mounting Style :

Chassis Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

DS Breakdown Voltage-Min :

100 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

-55 °C

Base Product Number :

IXTN200

Package Type :

SOT-227

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

100V

Package :

Bulk

Continuous Drain Current (ID) :

178A

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

830 W

Product :

Power MOSFET Modules

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

500A

Manufacturer :

IXYS

Number of Channels :

1 Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements per Chip :

1

Avalanche Energy Rating (Eas) :

5000 mJ

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

SOT-227B

Lead Free :

Lead Free

Mount :

Chassis Mount

Type :

Linear Power MOSFET

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2010

Drain Current-Max (Abs) (ID) :

178 A

RoHS :

Details

Product Category :

Discrete Semiconductor Modules

Length :

38.23mm

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

28 Weeks

Product Type :

Discrete Semiconductor Modules

Terminal Form :

UNSPECIFIED

Polarity/Channel Type :

N-Channel

Number of Pins :

4

Power Dissipation :

830W

Terminal Position :

UPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Series :

Linear L2™

Maximum Operating Temperature :

+150 °C

Brand :

IXYS

Case Connection :

Isolated

Packaging :

Bulk

Terminal Finish :

Nickel

Drain-source On Resistance-Max :

0.011 Ω

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Height :

9.6mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Width :

25.07mm

Channel Type :

N

Pin Count :

4

Power Dissipation-Max :

830W Tc

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

4

FET Feature :

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