IXTN200N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Drain-source On Resistance-Max :

0.011 Ω

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXTN200

Package :

Bulk

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Factory Lead Time :

28 Weeks

Transistor Polarity :

N-Channel

Pin Count :

4

Number of Pins :

4

Drain Current-Max (Abs) (ID) :

178 A

Length :

38.23mm

DS Breakdown Voltage-Min :

100 V

Drain to Source Voltage (Vdss) :

100V

Series :

Linear L2™

Continuous Drain Current (ID) :

178A

Power Dissipation (Max) :

830W (Tc)

Number of Elements :

1

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

830 W

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Type :

N

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Package / Case :

SOT-227-4, miniBLOC

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Number of Terminals :

4

Height :

9.6mm

Terminal Finish :

Nickel

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 10V

Terminal Form :

UNSPECIFIED

Current - Continuous Drain (Id) @ 25°C :

178A Tc

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Pbfree Code :

yes

Supplier Device Package :

SOT-227B

Package Type :

SOT-227

Package Shape :

RECTANGULAR

Product :

Power MOSFET Modules

Product Category :

Discrete Semiconductor Modules

Mounting Style :

Chassis Mount

Surface Mount :

No

Power Dissipation :

830W

Type :

Linear Power MOSFET

Mounting Type :

Chassis Mount

Power Dissipation-Max :

830W Tc

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Vgs (Max) :

±20V

Product Type :

Discrete Semiconductor Modules

Resistance :

11mOhm

Drain to Source Breakdown Voltage :

100V

Avalanche Energy Rating (Eas) :

5000 mJ

Pulsed Drain Current-Max (IDM) :

500A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

--

Published :

2010

Minimum Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+150 °C

JESD-30 Code :

R-PUFM-X4

Mount :

Chassis Mount

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

RoHS :

Details

Channel Mode :

Enhancement

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Number of Elements per Chip :

1

Manufacturer :

IXYS

Width :

25.07mm