IXTN120P20T
- Mfr.Part #
- IXTN120P20T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 106A SOT227B
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 400A
- Package / Case :
- SOT-227-4, miniBLOC
- Supplier Device Package :
- SOT-227B
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Terminal Position :
- UPPER
- Package :
- Tube
- Series :
- TrenchP™
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Type :
- Trench
- Reach Compliance Code :
- Unknown
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- Product Status :
- Active
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 830W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Chassis Mount
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Terminations :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 73000pF @ 25V
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- JESD-30 Code :
- R-PUFM-X4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXTN120
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 60A, 10V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 830W Tc
- Published :
- 2013
- Terminal Form :
- UNSPECIFIED
- Mount :
- Chassis Mount
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 106A Tc
- Transistor Element Material :
- SILICON
- Product Type :
- Discrete Semiconductor Modules
- Continuous Drain Current (ID) :
- 106A
- Mounting Style :
- Chassis Mount
- Product Category :
- Discrete Semiconductor Modules
- Case Connection :
- Isolated
- Transistor Polarity :
- P-Channel
- Vgs (Max) :
- ±15V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Drain-source On Resistance-Max :
- 0.03Ohm
- FET Type :
- P-Channel
- Brand :
- IXYS
- Product :
- Power MOSFET Modules
- DS Breakdown Voltage-Min :
- 200V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Datasheets
- IXTN120P20T

P-Channel Tube 30m Ω @ 60A, 10V ±15V 73000pF @ 25V 740nC @ 10V 200V SOT-227-4, miniBLOC
IXTN120P20T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 73000pF @ 25V.This device has a continuous drain current (ID) of [106A], which is its maximum continuous current.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 200V.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTN120P20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 106A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXTN120P20T Applications
There are a lot of IXYS
IXTN120P20T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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