IXTN210P10T
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- Mfr.Part #
- IXTN210P10T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 210A SOT227B
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Product Type :
- Discrete Semiconductor Modules
- Base Product Number :
- IXTN210
- Number of Terminations :
- 4
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Type :
- Trench
- Continuous Drain Current (ID) :
- 210A
- DS Breakdown Voltage-Min :
- 100V
- Mounting Style :
- Chassis Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 69500pF @ 25V
- Transistor Element Material :
- SILICON
- Continuous Drain Current Id :
- 210A
- Power Dissipation-Max :
- 830W Tc
- Pin Count :
- 4
- Mount :
- Chassis Mount
- Maximum Operating Temperature :
- + 150 C
- Channel Type :
- P Channel
- Terminal Position :
- UPPER
- Product :
- Power MOSFET Modules
- Product Status :
- Active
- JESD-30 Code :
- R-PUFM-X4
- RoHS :
- Details
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 800A
- Supplier Device Package :
- SOT-227B
- Mounting Type :
- Chassis Mount
- Power Dissipation (Max) :
- 830W (Tc)
- Factory Lead Time :
- 28 Weeks
- Package :
- Tube
- Vgs (Max) :
- ±15V
- Terminal Form :
- UNSPECIFIED
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Reach Compliance Code :
- Unknown
- Series :
- TrenchP™
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 105A, 10V
- Tradename :
- TrenchP
- Case Connection :
- Isolated
- FET Feature :
- --
- Package / Case :
- SOT-227-4, miniBLOC
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 830W
- FET Type :
- P-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- Discrete Semiconductor Modules
- Datasheets
- IXTN210P10T
P-Channel Tube 7.5m Ω @ 105A, 10V ±15V 69500pF @ 25V 740nC @ 10V 100V SOT-227-4, miniBLOC
IXTN210P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 69500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 210A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 800A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTN210P10T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 210A
based on its rated peak drain current 800A.
a 100V drain to source voltage (Vdss)
IXTN210P10T Applications
There are a lot of IXYS
IXTN210P10T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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