IXTN210P10T
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- Mfr.Part #
- IXTN210P10T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 210A SOT227B
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTN210
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Product :
- Power MOSFET Modules
- Mounting Type :
- Chassis Mount
- Power Dissipation :
- 830W
- Power Dissipation (Max) :
- 830W (Tc)
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±15V
- Mount :
- Chassis Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Type :
- Trench
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 105A, 10V
- Factory Lead Time :
- 28 Weeks
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation-Max :
- 830W Tc
- Terminal Position :
- UPPER
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 100V
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- SOT-227-4, miniBLOC
- Product Type :
- Discrete Semiconductor Modules
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- Package :
- Tube
- Continuous Drain Current (ID) :
- 210A
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Style :
- Chassis Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 69500pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 800A
- Continuous Drain Current Id :
- 210A
- Channel Type :
- P Channel
- Product Category :
- Discrete Semiconductor Modules
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- FET Feature :
- --
- JESD-30 Code :
- R-PUFM-X4
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Tradename :
- TrenchP
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Reach Compliance Code :
- Unknown
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- UNSPECIFIED
- Brand :
- IXYS
- Series :
- TrenchP™
- RoHS :
- Details
- Supplier Device Package :
- SOT-227B
- Number of Terminations :
- 4
- Datasheets
- IXTN210P10T
P-Channel Tube 7.5m Ω @ 105A, 10V ±15V 69500pF @ 25V 740nC @ 10V 100V SOT-227-4, miniBLOC
IXTN210P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 69500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 210A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 800A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTN210P10T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 210A
based on its rated peak drain current 800A.
a 100V drain to source voltage (Vdss)
IXTN210P10T Applications
There are a lot of IXYS
IXTN210P10T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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