IXTN210P10T
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- Mfr.Part #
- IXTN210P10T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 210A SOT227B
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 830W Tc
- Mounting Type :
- Chassis Mount
- Channel Type :
- P Channel
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- Isolated
- Product Status :
- Active
- ECCN Code :
- EAR99
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- TrenchP
- Series :
- TrenchP™
- Continuous Drain Current (ID) :
- 210A
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- FET Feature :
- --
- Packaging :
- Tube
- Manufacturer :
- IXYS
- FET Type :
- P-Channel
- Published :
- 2013
- Package / Case :
- SOT-227-4, miniBLOC
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- SOT-227B
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Package :
- Tube
- Terminal Form :
- UNSPECIFIED
- Type :
- Trench
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Continuous Drain Current Id :
- 210A
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 100V
- Product Type :
- Discrete Semiconductor Modules
- Input Capacitance (Ciss) (Max) @ Vds :
- 69500pF @ 25V
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Product :
- Power MOSFET Modules
- JESD-30 Code :
- R-PUFM-X4
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Vgs (Max) :
- ±15V
- Number of Terminations :
- 4
- Terminal Position :
- UPPER
- Pulsed Drain Current-Max (IDM) :
- 800A
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Chassis Mount
- Pin Count :
- 4
- Product Category :
- Discrete Semiconductor Modules
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 28 Weeks
- Base Product Number :
- IXTN210
- DS Breakdown Voltage-Min :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 830W
- Power Dissipation (Max) :
- 830W (Tc)
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 105A, 10V
- Mounting Style :
- Chassis Mount
- Transistor Application :
- SWITCHING
- Datasheets
- IXTN210P10T
P-Channel Tube 7.5m Ω @ 105A, 10V ±15V 69500pF @ 25V 740nC @ 10V 100V SOT-227-4, miniBLOC
IXTN210P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 69500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 210A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 800A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTN210P10T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 210A
based on its rated peak drain current 800A.
a 100V drain to source voltage (Vdss)
IXTN210P10T Applications
There are a lot of IXYS
IXTN210P10T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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