IXTN210P10T
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- Mfr.Part #
- IXTN210P10T
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 210A SOT227B
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 800A
- Continuous Drain Current Id :
- 210A
- Power Dissipation (Max) :
- 830W (Tc)
- Tradename :
- TrenchP
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-227-4, miniBLOC
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation :
- 830W
- Terminal Form :
- UNSPECIFIED
- Published :
- 2013
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Packaging :
- Tube
- Vgs (Max) :
- ±15V
- Product :
- Power MOSFET Modules
- FET Feature :
- --
- Mounting Style :
- Chassis Mount
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Package :
- Tube
- Terminal Position :
- UPPER
- Case Connection :
- Isolated
- Number of Terminations :
- 4
- FET Type :
- P-Channel
- Factory Lead Time :
- 28 Weeks
- Number of Elements :
- 1
- Power Dissipation-Max :
- 830W Tc
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- DS Breakdown Voltage-Min :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS
- Product Category :
- Discrete Semiconductor Modules
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- TrenchP™
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 69500pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 210A
- Supplier Device Package :
- SOT-227B
- Product Type :
- Discrete Semiconductor Modules
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Mount :
- Chassis Mount
- Base Product Number :
- IXTN210
- Channel Type :
- P Channel
- Product Status :
- Active
- Type :
- Trench
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 105A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- JESD-30 Code :
- R-PUFM-X4
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Mounting Type :
- Chassis Mount
- Reach Compliance Code :
- Unknown
- Datasheets
- IXTN210P10T
P-Channel Tube 7.5m Ω @ 105A, 10V ±15V 69500pF @ 25V 740nC @ 10V 100V SOT-227-4, miniBLOC
IXTN210P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 69500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 210A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 800A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTN210P10T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 210A
based on its rated peak drain current 800A.
a 100V drain to source voltage (Vdss)
IXTN210P10T Applications
There are a lot of IXYS
IXTN210P10T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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