IXTN110N20L2
- Mfr.Part #
- IXTN110N20L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A SOT227B
- Stock
- 35,237
- In Stock :
- 35,237
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 735W (Tc)
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Product Category :
- Discrete Semiconductor Modules
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Mount :
- Chassis Mount, Screw
- Continuous Drain Current (ID) :
- 100A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Terminal Form :
- UNSPECIFIED
- Factory Lead Time :
- 28 Weeks
- Manufacturer :
- IXYS
- DS Breakdown Voltage-Min :
- 200V
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 4
- Height :
- 12.22 mm
- Pulsed Drain Current-Max (IDM) :
- 275A
- Product Type :
- Discrete Semiconductor Modules
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 25.42 mm
- Qualification Status :
- Not Qualified
- Terminal Position :
- UPPER
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- FET Type :
- N-Channel
- Terminal Finish :
- Nickel
- Series :
- Linear L2™
- Length :
- 38.23 mm
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- SOT-227B
- Type :
- Linear Power MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Number of Pins :
- 4
- Transistor Polarity :
- N-Channel
- Package / Case :
- SOT-227-4, miniBLOC
- FET Feature :
- --
- Tradename :
- Linear L2
- Published :
- 2009
- Mounting Type :
- Chassis Mount
- Packaging :
- Tube
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 200V
- Case Connection :
- Isolated
- Mounting Style :
- Chassis Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Product Status :
- Active
- RoHS :
- Details
- Package :
- Tube
- Power Dissipation :
- 735W
- Product :
- Power MOSFET Modules
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Base Product Number :
- IXTN110
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Power Dissipation-Max :
- 735W Tc
- Rise Time :
- 100 ns
- Datasheets
- IXTN110N20L2

N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC
IXTN110N20L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTN110N20L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)
IXTN110N20L2 Applications
There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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