IXTN110N20L2
- Mfr.Part #
- IXTN110N20L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A SOT227B
- Stock
- 35,237
- In Stock :
- 35,237
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Factory Lead Time :
- 28 Weeks
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- SOT-227B
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 735W (Tc)
- Published :
- 2009
- Type :
- Linear Power MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- Discrete Semiconductor Modules
- Product Status :
- Active
- Length :
- 38.23 mm
- Height :
- 12.22 mm
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Package / Case :
- SOT-227-4, miniBLOC
- ECCN Code :
- EAR99
- Width :
- 25.42 mm
- Mounting Type :
- Chassis Mount
- Number of Pins :
- 4
- Pulsed Drain Current-Max (IDM) :
- 275A
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 200V
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Mounting Style :
- Chassis Mount
- Power Dissipation-Max :
- 735W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 4
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- RoHS :
- Details
- Product Type :
- Discrete Semiconductor Modules
- Tradename :
- Linear L2
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- UNSPECIFIED
- Transistor Application :
- SWITCHING
- Mount :
- Chassis Mount, Screw
- Case Connection :
- Isolated
- Manufacturer :
- IXYS
- Terminal Finish :
- Nickel
- FET Feature :
- --
- Series :
- Linear L2™
- Power Dissipation :
- 735W
- Number of Channels :
- 1 Channel
- Terminal Position :
- UPPER
- FET Type :
- N-Channel
- Base Product Number :
- IXTN110
- Product :
- Power MOSFET Modules
- Rise Time :
- 100 ns
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 100A
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTN110N20L2

N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC
IXTN110N20L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTN110N20L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)
IXTN110N20L2 Applications
There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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