IXTN110N20L2
- Mfr.Part #
- IXTN110N20L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A SOT227B
- Stock
- 35,237
- In Stock :
- 35,237
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Chassis Mount
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- Discrete Semiconductor Modules
- Product :
- Power MOSFET Modules
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- UNSPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Power Dissipation :
- 735W
- Power Dissipation (Max) :
- 735W (Tc)
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Type :
- Linear Power MOSFET
- Package / Case :
- SOT-227-4, miniBLOC
- Width :
- 25.42 mm
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel
- Terminal Position :
- UPPER
- Drain to Source Voltage (Vdss) :
- 200V
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Rise Time :
- 100 ns
- Power Dissipation-Max :
- 735W Tc
- Mount :
- Chassis Mount, Screw
- Supplier Device Package :
- SOT-227B
- Factory Lead Time :
- 28 Weeks
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 38.23 mm
- Series :
- Linear L2™
- Product Type :
- Discrete Semiconductor Modules
- Pulsed Drain Current-Max (IDM) :
- 275A
- FET Type :
- N-Channel
- Packaging :
- Tube
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 12.22 mm
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- RoHS :
- Details
- Base Product Number :
- IXTN110
- Tradename :
- Linear L2
- Number of Pins :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- Number of Channels :
- 1 Channel
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 100A
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXTN110N20L2

N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC
IXTN110N20L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTN110N20L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)
IXTN110N20L2 Applications
There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















