IXTN110N20L2

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Mfr.Part #
IXTN110N20L2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 200V 100A SOT227B
Stock
35,237
In Stock :
35,237

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Factory Lead Time :
28 Weeks
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
SOT-227B
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
735W (Tc)
Published :
2009
Type :
Linear Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
Discrete Semiconductor Modules
Product Status :
Active
Length :
38.23 mm
Height :
12.22 mm
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Package / Case :
SOT-227-4, miniBLOC
ECCN Code :
EAR99
Width :
25.42 mm
Mounting Type :
Chassis Mount
Number of Pins :
4
Pulsed Drain Current-Max (IDM) :
275A
Pbfree Code :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate to Source Voltage (Vgs) :
20V
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
200V
Drain to Source Voltage (Vdss) :
200V
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Mounting Style :
Chassis Mount
Power Dissipation-Max :
735W Tc
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Vgs (Max) :
±20V
Number of Terminations :
4
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
RoHS :
Details
Product Type :
Discrete Semiconductor Modules
Tradename :
Linear L2
Avalanche Energy Rating (Eas) :
5000 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
UNSPECIFIED
Transistor Application :
SWITCHING
Mount :
Chassis Mount, Screw
Case Connection :
Isolated
Manufacturer :
IXYS
Terminal Finish :
Nickel
FET Feature :
--
Series :
Linear L2™
Power Dissipation :
735W
Number of Channels :
1 Channel
Terminal Position :
UPPER
FET Type :
N-Channel
Base Product Number :
IXTN110
Product :
Power MOSFET Modules
Rise Time :
100 ns
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
500nC @ 10V
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
100A
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXTN110N20L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN110N20L2 from Chip IC,where excellence meets affordability. This product stands out with its Type:Linear Power MOSFET, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Number of Channels:1 Channel, IXTN110N20L2 pinout, IXTN110N20L2 datasheet PDF, IXTN110N20L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN110N20L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN110N20L2


N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC

IXTN110N20L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTN110N20L2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)


IXTN110N20L2 Applications


There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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