IXTN110N20L2
- Mfr.Part #
- IXTN110N20L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A SOT227B
- Stock
- 35,237
- In Stock :
- 35,237
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- RoHS :
- Details
- Supplier Device Package :
- SOT-227B
- Product Status :
- Active
- FET Feature :
- --
- Manufacturer :
- IXYS
- Published :
- 2009
- Base Product Number :
- IXTN110
- Reach Compliance Code :
- Unknown
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Terminal Form :
- UNSPECIFIED
- Power Dissipation (Max) :
- 735W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Style :
- Chassis Mount
- Number of Pins :
- 4
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 735W
- Mount :
- Chassis Mount, Screw
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Number of Channels :
- 1 Channel
- Product :
- Power MOSFET Modules
- Power Dissipation-Max :
- 735W Tc
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- UPPER
- DS Breakdown Voltage-Min :
- 200V
- Factory Lead Time :
- 28 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- Terminal Finish :
- Nickel
- Height :
- 12.22 mm
- Number of Terminations :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Drain to Source Voltage (Vdss) :
- 200V
- Series :
- Linear L2™
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Brand :
- IXYS
- Case Connection :
- Isolated
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 100A
- Type :
- Linear Power MOSFET
- Rise Time :
- 100 ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Category :
- Discrete Semiconductor Modules
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 275A
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- Discrete Semiconductor Modules
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Tradename :
- Linear L2
- Length :
- 38.23 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Width :
- 25.42 mm
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Datasheets
- IXTN110N20L2

N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC
IXTN110N20L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTN110N20L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)
IXTN110N20L2 Applications
There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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