IXTN110N20L2
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- Mfr.Part #
- IXTN110N20L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A SOT227B
- Stock
- 35,237
- In Stock ：
- 35,237
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Chassis Mount
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- Discrete Semiconductor Modules
- Product :
- Power MOSFET Modules
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- UNSPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Power Dissipation :
- 735W
- Power Dissipation (Max) :
- 735W (Tc)
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Type :
- Linear Power MOSFET
- Package / Case :
- SOT-227-4, miniBLOC
- Width :
- 25.42 mm
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel
- Terminal Position :
- UPPER
- Drain to Source Voltage (Vdss) :
- 200V
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Rise Time :
- 100 ns
- Power Dissipation-Max :
- 735W Tc
- Mount :
- Chassis Mount, Screw
- Supplier Device Package :
- SOT-227B
- Factory Lead Time :
- 28 Weeks
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 38.23 mm
- Series :
- Linear L2™
- Product Type :
- Discrete Semiconductor Modules
- Pulsed Drain Current-Max (IDM) :
- 275A
- FET Type :
- N-Channel
- Packaging :
- Tube
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 12.22 mm
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- RoHS :
- Details
- Base Product Number :
- IXTN110
- Tradename :
- Linear L2
- Number of Pins :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- Number of Channels :
- 1 Channel
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 100A
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXTN110N20L2
N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V SOT-227-4, miniBLOC
IXTN110N20L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTN110N20L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)
IXTN110N20L2 Applications
There are a lot of IXYS
IXTN110N20L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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