IXTN200N10T

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Mfr.Part #
IXTN200N10T
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 100V 200A SOT227B
Stock
24,889
In Stock :
24,889

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
31ns
Number of Channels :
1 Channel
Operating Temperature :
-55°C~175°C TJ
Brand :
IXYS
Package :
Tube
Vgs (Max) :
±20V
Mounting Type :
Chassis Mount
Mount :
Chassis Mount, Screw
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Minimum Operating Temperature :
- 55 C
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Configuration :
Single
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
100V
Reach Compliance Code :
Unknown
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
4
Turn-Off Delay Time :
45 ns
Product Type :
Discrete Semiconductor Modules
Terminal Finish :
Nickel
Tradename :
HiPerFET
Maximum Operating Temperature :
+ 175 C
Fall Time (Typ) :
34 ns
Factory Lead Time :
28 Weeks
Packaging :
Tube
Power Dissipation-Max :
550W Tc
Product Status :
Active
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
500A
Base Product Number :
IXTN200
Mounting Style :
Chassis Mount
Drain-source On Resistance-Max :
0.0055Ohm
Power Dissipation (Max) :
550W (Tc)
Supplier Device Package :
SOT-227B
FET Feature :
--
RoHS :
Details
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
SOT-227-4, miniBLOC
Terminal Position :
UPPER
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
100V
Terminal Form :
UNSPECIFIED
Type :
Trench
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
200A
Power Dissipation :
550W
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Product Category :
Discrete Semiconductor Modules
Qualification Status :
Not Qualified
Pin Count :
4
ECCN Code :
EAR99
Lead Free :
Lead Free
Published :
2008
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Number of Pins :
4
Product :
Power MOSFET Modules
Series :
TrenchMV™
Case Connection :
Isolated
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Chassis Mount, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Type:Trench, Number of Pins:4, IXTN200N10T pinout, IXTN200N10T datasheet PDF, IXTN200N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN200N10T


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 9400pF @ 25V 152nC @ 10V 100V SOT-227-4, miniBLOC

IXTN200N10T Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9400pF @ 25V.This device has a continuous drain current (ID) of [200A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTN200N10T Features


a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)


IXTN200N10T Applications


There are a lot of IXYS
IXTN200N10T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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