IXTN200N10T

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Mfr.Part #
IXTN200N10T
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 100V 200A SOT227B
Stock
24,889
In Stock :
24,889

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Mount :
Chassis Mount, Screw
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Element Configuration :
Single
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Product Category :
Discrete Semiconductor Modules
Package / Case :
SOT-227-4, miniBLOC
ECCN Code :
EAR99
FET Type :
N-Channel
Terminal Finish :
Nickel
Product Type :
Discrete Semiconductor Modules
Transistor Polarity :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Rise Time :
31ns
Pin Count :
4
Power Dissipation (Max) :
550W (Tc)
Published :
2008
Tradename :
HiPerFET
Mounting Style :
Chassis Mount
Number of Terminations :
4
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
0.0055Ohm
Series :
TrenchMV™
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Number of Channels :
1 Channel
Fall Time (Typ) :
34 ns
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
UPPER
Continuous Drain Current (ID) :
200A
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Supplier Device Package :
SOT-227B
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Chassis Mount
Brand :
IXYS
Terminal Form :
UNSPECIFIED
Number of Elements :
1
Reach Compliance Code :
Unknown
Case Connection :
Isolated
Factory Lead Time :
28 Weeks
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~175°C TJ
Qualification Status :
Not Qualified
Minimum Operating Temperature :
- 55 C
Product :
Power MOSFET Modules
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
200A Tc
Number of Pins :
4
Power Dissipation :
550W
Package :
Tube
Power Dissipation-Max :
550W Tc
Maximum Operating Temperature :
+ 175 C
Type :
Trench
Turn-Off Delay Time :
45 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
500A
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
100V
Drain to Source Breakdown Voltage :
100V
Lead Free :
Lead Free
Vgs (Max) :
±20V
Pbfree Code :
yes
Base Product Number :
IXTN200
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Number of Channels:1 Channel, Mounting Type:Chassis Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:4, Type:Trench, IXTN200N10T pinout, IXTN200N10T datasheet PDF, IXTN200N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN200N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN200N10T


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 9400pF @ 25V 152nC @ 10V 100V SOT-227-4, miniBLOC

IXTN200N10T Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9400pF @ 25V.This device has a continuous drain current (ID) of [200A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTN200N10T Features


a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)


IXTN200N10T Applications


There are a lot of IXYS
IXTN200N10T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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