IXTN62N50L
- Mfr.Part #
- IXTN62N50L
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 62A SOT227B
- Stock
- 46,437
- In Stock :
- 46,437
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1 Channel
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 550nC @ 20V
- Transistor Application :
- SWITCHING
- Type :
- Linear Power MOSFET
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Channel Type :
- N
- Product Type :
- Discrete Semiconductor Modules
- FET Feature :
- --
- Width :
- 25.42mm
- Turn On Delay Time :
- 36 ns
- Factory Lead Time :
- 24 Weeks
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Position :
- UPPER
- Package Type :
- SOT-227
- Mounting Type :
- Chassis Mount
- Brand :
- IXYS
- Product Category :
- Discrete Semiconductor Modules
- Case Connection :
- Isolated
- Terminal Finish :
- Nickel
- Terminal Form :
- UNSPECIFIED
- Product :
- Power MOSFET Modules
- Lead Free :
- Lead Free
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Packaging :
- Tube
- Series :
- --
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 500mA, 20V
- Vgs (Max) :
- ±30V
- Published :
- 2007
- Power Dissipation :
- 800W
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Height :
- 9.6mm
- Length :
- 38.23mm
- Number of Terminations :
- 4
- Product Status :
- Active
- Mounting Style :
- Chassis Mount
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 800W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 75 ns
- Number of Pins :
- 4
- Maximum Operating Temperature :
- +150 °C
- Package / Case :
- SOT-227-4, miniBLOC
- Configuration :
- Single
- Additional Feature :
- UL RECOGNIZED
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Turn-Off Delay Time :
- 110 ns
- Tradename :
- Linear
- Minimum Operating Temperature :
- -55 °C
- Power Dissipation (Max) :
- 800W (Tc)
- Continuous Drain Current (ID) :
- 62A
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 25V
- Element Configuration :
- Single
- Base Product Number :
- IXTN62
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 85ns
- Gate to Source Voltage (Vgs) :
- 30V
- Package :
- Tube
- Number of Elements per Chip :
- 1
- Supplier Device Package :
- SOT-227B
- Mount :
- Chassis Mount, Panel, Screw
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Polarity :
- N-Channel
- Datasheets
- IXTN62N50L

N-Channel Tube 100m Ω @ 500mA, 20V ±30V 11500pF @ 25V 550nC @ 20V 500V SOT-227-4, miniBLOC
IXTN62N50L Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 11500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 62A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 36 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (20V), this device helps reduce its overall power consumption.
IXTN62N50L Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
a 500V drain to source voltage (Vdss)
IXTN62N50L Applications
There are a lot of IXYS
IXTN62N50L applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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