IXTN60N50L2
- Mfr.Part #
- IXTN60N50L2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 53A SOT227B
- Stock
- 6,289
- In Stock :
- 6,289
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 2.5V
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- UPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Terminal Form :
- UNSPECIFIED
- Factory Lead Time :
- 28 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- Maximum Operating Temperature :
- + 150 C
- Pbfree Code :
- yes
- Supplier Device Package :
- SOT-227B
- Number of Pins :
- 4
- Terminal Finish :
- Nickel (Ni)
- Type :
- Linear Power MOSFET
- Product Type :
- Discrete Semiconductor Modules
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 735W (Tc)
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- N-Channel
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PUFM-X4
- Vgs (Max) :
- ±30V
- Product Category :
- Discrete Semiconductor Modules
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 53A
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 150A
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 30A, 10V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Width :
- 25.42 mm
- Manufacturer :
- IXYS
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Base Product Number :
- IXTN60
- Mounting Style :
- Chassis Mount
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.1Ohm
- Power Dissipation-Max (Abs) :
- 735 W
- Nominal Vgs :
- 2.5 V
- Length :
- 38.23 mm
- Product :
- Power MOSFET Modules
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 24000pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 30A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Linear L2™
- Height :
- 12.22 mm
- Number of Terminations :
- 4
- Mount :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 610nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- Isolated
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 500V
- Mounting Type :
- Chassis Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 4
- Tradename :
- Linear L2
- Package / Case :
- SOT-227-4, miniBLOC
- Package :
- Tube
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Rise Time :
- 40 ns
- Power Dissipation :
- 735W
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Additional Feature :
- UL RECOGNIZED
- Power Dissipation-Max :
- 735W Tc
- Datasheets
- IXTN60N50L2

N-Channel Tube 100m Ω @ 30A, 10V ±30V 24000pF @ 25V 610nC @ 10V 500V SOT-227-4, miniBLOC
IXTN60N50L2 Description
IXTN60N50L2 is a LinearL2™ single N-channel enhancement-mode linear Power MOSFET with extended FBSOA. It is suitable for solid-state circuit breakers, soft start controls, linear amplifiers, programmable loads, and current regulators. It is designed for linear operation. The Operating and Storage Temperature Range is between -55 and +150℃. And the transistor IXTN60N50L2 in the SOT-227-4 package with 735W Power Dissipation.
IXTN60N50L2 Features
Designed for linear operation
International standard package
Molding epoxy meets UL94 V-0 flammability classification
miniBLOC with Aluminium nitride isolation
Guaranteed FBSOA at 75C
IXTN60N50L2 Applications
Programmable loads
Current regulators
DC-DC converters
Battery chargers
DC choppers
Temperature and lighting controls
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