IXTN600N04T2
- Mfr.Part #
- IXTN600N04T2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 600A SOT227B
- Stock
- 209
- In Stock :
- 209
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 940W (Tc)
- Operating Temperature :
- -55°C~175°C TJ
- Product :
- Power MOSFET Modules
- Factory Lead Time :
- 28 Weeks
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 600A
- Number of Outputs :
- 1
- FET Feature :
- --
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Terminal Position :
- UPPER
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 40 ns
- Power Dissipation :
- 940W
- Terminal Form :
- UNSPECIFIED
- Package / Case :
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Mounting Type :
- Chassis Mount
- Packaging :
- Tube
- Mount :
- Chassis Mount, Screw
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Type :
- Trench
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- RoHS :
- Details
- Turn-Off Delay Time :
- 90 ns
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 40V
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Lead Free :
- Lead Free
- Product Category :
- Discrete Semiconductor Modules
- Transistor Element Material :
- SILICON
- Nominal Supply Current :
- 200A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Series :
- GigaMOS™, TrenchT2™
- Product Type :
- Discrete Semiconductor Modules
- Power Dissipation-Max :
- 940W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Nickel
- Output Voltage :
- 40V
- Number of Terminations :
- 4
- Reach Compliance Code :
- Unknown
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXTN600
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.05m Ω @ 100A, 10V
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 600A Tc
- Fall Time (Typ) :
- 250 ns
- Output Current :
- 600A
- Tradename :
- HiPerFET
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Chassis Mount
- Number of Pins :
- 4
- Maximum Operating Temperature :
- + 175 C
- Vgs (Max) :
- ±20V
- Rise Time :
- 20ns
- Supplier Device Package :
- SOT-227B
- Gate Charge (Qg) (Max) @ Vgs :
- 590nC @ 10V
- Pin Count :
- 4
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Datasheets
- IXTN600N04T2

N-Channel Tube 1.05m Ω @ 100A, 10V ±20V 40000pF @ 25V 590nC @ 10V 40V SOT-227-4, miniBLOC
IXTN600N04T2 Description
IXTN600N04T2 is a 40V TrenchT2™ GigaMOS™ Power MOSFET. A power MOSFET is a specific metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to the degree that the gate voltage needs to be higher than the voltage under control.
IXTN600N04T2 Features
International Standard Package
miniBLOC, with Aluminium Nitride Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~ z High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
IXTN600N04T2 Applications
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High-Speed Power Switching Applications
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