IXTN600N04T2
- Mfr.Part #
- IXTN600N04T2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 600A SOT227B
- Stock
- 209
- In Stock :
- 209
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 40 ns
- Transistor Element Material :
- SILICON
- Mount :
- Chassis Mount, Screw
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 40V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.05m Ω @ 100A, 10V
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- UNSPECIFIED
- Reach Compliance Code :
- Unknown
- Package / Case :
- SOT-227-4, miniBLOC
- Type :
- Trench
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- Isolated
- Product :
- Power MOSFET Modules
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Number of Pins :
- 4
- Maximum Operating Temperature :
- + 175 C
- RoHS :
- Details
- Nominal Supply Current :
- 200A
- Published :
- 2012
- Factory Lead Time :
- 28 Weeks
- Lead Free :
- Lead Free
- Number of Outputs :
- 1
- Transistor Application :
- SWITCHING
- Product Category :
- Discrete Semiconductor Modules
- Supplier Device Package :
- SOT-227B
- Current - Continuous Drain (Id) @ 25°C :
- 600A Tc
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- UPPER
- Product Status :
- Active
- Fall Time (Typ) :
- 250 ns
- Output Voltage :
- 40V
- Radiation Hardening :
- No
- Packaging :
- Tube
- Package :
- Tube
- Power Dissipation-Max :
- 940W Tc
- Transistor Polarity :
- N-Channel
- Turn-Off Delay Time :
- 90 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Number of Terminations :
- 4
- Mounting Style :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 590nC @ 10V
- Power Dissipation (Max) :
- 940W (Tc)
- Power Dissipation :
- 940W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Rise Time :
- 20ns
- Tradename :
- HiPerFET
- Product Type :
- Discrete Semiconductor Modules
- RoHS Status :
- ROHS3 Compliant
- Series :
- GigaMOS™, TrenchT2™
- Mounting Type :
- Chassis Mount
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Base Product Number :
- IXTN600
- Output Current :
- 600A
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Pin Count :
- 4
- Terminal Finish :
- Nickel
- Continuous Drain Current (ID) :
- 600A
- Datasheets
- IXTN600N04T2

N-Channel Tube 1.05m Ω @ 100A, 10V ±20V 40000pF @ 25V 590nC @ 10V 40V SOT-227-4, miniBLOC
IXTN600N04T2 Description
IXTN600N04T2 is a 40V TrenchT2™ GigaMOS™ Power MOSFET. A power MOSFET is a specific metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to the degree that the gate voltage needs to be higher than the voltage under control.
IXTN600N04T2 Features
International Standard Package
miniBLOC, with Aluminium Nitride Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~ z High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
IXTN600N04T2 Applications
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High-Speed Power Switching Applications
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