IXTN600N04T2
- Mfr.Part #
- IXTN600N04T2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 600A SOT227B
- Stock
- 209
- In Stock :
- 209
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation (Max) :
- 940W (Tc)
- Type :
- Trench
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Product Type :
- Discrete Semiconductor Modules
- Brand :
- IXYS
- Output Voltage :
- 40V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 590nC @ 10V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 1.05m Ω @ 100A, 10V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 250 ns
- Number of Pins :
- 4
- Turn-Off Delay Time :
- 90 ns
- Turn On Delay Time :
- 40 ns
- ECCN Code :
- EAR99
- Number of Outputs :
- 1
- Number of Elements :
- 1
- Product Status :
- Active
- Terminal Position :
- UPPER
- Current - Continuous Drain (Id) @ 25°C :
- 600A Tc
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Drain to Source Voltage (Vdss) :
- 40V
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Factory Lead Time :
- 28 Weeks
- Series :
- GigaMOS™, TrenchT2™
- Mounting Type :
- Chassis Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Category :
- Discrete Semiconductor Modules
- Maximum Operating Temperature :
- + 175 C
- Output Current :
- 600A
- Manufacturer :
- IXYS
- Tradename :
- HiPerFET
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Rise Time :
- 20ns
- Terminal Form :
- UNSPECIFIED
- Power Dissipation :
- 940W
- Nominal Supply Current :
- 200A
- Published :
- 2012
- Package / Case :
- SOT-227-4, miniBLOC
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Chassis Mount, Screw
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 600A
- Packaging :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Chassis Mount
- Supplier Device Package :
- SOT-227B
- Product :
- Power MOSFET Modules
- Terminal Finish :
- Nickel
- Power Dissipation-Max :
- 940W Tc
- Base Product Number :
- IXTN600
- Number of Terminations :
- 4
- Package :
- Tube
- Radiation Hardening :
- No
- Reach Compliance Code :
- Unknown
- Datasheets
- IXTN600N04T2

N-Channel Tube 1.05m Ω @ 100A, 10V ±20V 40000pF @ 25V 590nC @ 10V 40V SOT-227-4, miniBLOC
IXTN600N04T2 Description
IXTN600N04T2 is a 40V TrenchT2™ GigaMOS™ Power MOSFET. A power MOSFET is a specific metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to the degree that the gate voltage needs to be higher than the voltage under control.
IXTN600N04T2 Features
International Standard Package
miniBLOC, with Aluminium Nitride Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~ z High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
IXTN600N04T2 Applications
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High-Speed Power Switching Applications
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