IXTN600N04T2

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Mfr.Part #
IXTN600N04T2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 40V 600A SOT227B
Stock
209
In Stock :
209

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
40 ns
Transistor Element Material :
SILICON
Mount :
Chassis Mount, Screw
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
40V
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
1.05m Ω @ 100A, 10V
Additional Feature :
UL RECOGNIZED, AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
UNSPECIFIED
Reach Compliance Code :
Unknown
Package / Case :
SOT-227-4, miniBLOC
Type :
Trench
Minimum Operating Temperature :
- 55 C
Case Connection :
Isolated
Product :
Power MOSFET Modules
Brand :
IXYS
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Number of Pins :
4
Maximum Operating Temperature :
+ 175 C
RoHS :
Details
Nominal Supply Current :
200A
Published :
2012
Factory Lead Time :
28 Weeks
Lead Free :
Lead Free
Number of Outputs :
1
Transistor Application :
SWITCHING
Product Category :
Discrete Semiconductor Modules
Supplier Device Package :
SOT-227B
Current - Continuous Drain (Id) @ 25°C :
600A Tc
Manufacturer :
IXYS
Operating Temperature :
-55°C~175°C TJ
Terminal Position :
UPPER
Product Status :
Active
Fall Time (Typ) :
250 ns
Output Voltage :
40V
Radiation Hardening :
No
Packaging :
Tube
Package :
Tube
Power Dissipation-Max :
940W Tc
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
90 ns
Input Capacitance (Ciss) (Max) @ Vds :
40000pF @ 25V
Number of Terminations :
4
Mounting Style :
Chassis Mount
Gate Charge (Qg) (Max) @ Vgs :
590nC @ 10V
Power Dissipation (Max) :
940W (Tc)
Power Dissipation :
940W
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Rise Time :
20ns
Tradename :
HiPerFET
Product Type :
Discrete Semiconductor Modules
RoHS Status :
ROHS3 Compliant
Series :
GigaMOS™, TrenchT2™
Mounting Type :
Chassis Mount
Avalanche Energy Rating (Eas) :
3000 mJ
FET Type :
N-Channel
Pbfree Code :
yes
Base Product Number :
IXTN600
Output Current :
600A
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Pin Count :
4
Terminal Finish :
Nickel
Continuous Drain Current (ID) :
600A
Datasheets
IXTN600N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN600N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Type:Trench, Number of Pins:4, Operating Temperature:-55°C~175°C TJ, Number of Terminations:4, Mounting Type:Chassis Mount, IXTN600N04T2 pinout, IXTN600N04T2 datasheet PDF, IXTN600N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN600N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN600N04T2


N-Channel Tube 1.05m Ω @ 100A, 10V ±20V 40000pF @ 25V 590nC @ 10V 40V SOT-227-4, miniBLOC

IXTN600N04T2 Description


IXTN600N04T2 is a 40V TrenchT2™ GigaMOS™ Power MOSFET. A power MOSFET is a specific metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to the degree that the gate voltage needs to be higher than the voltage under control.



IXTN600N04T2 Features


International Standard Package

miniBLOC, with Aluminium Nitride Isolation

175°C Operating Temperature

Isolation Voltage 2500 V~ z High Current Handling Capability

Fast Intrinsic Diode

Avalanche Rated

Low RDS(on)



IXTN600N04T2 Applications


DC-DC Converters and Off-Line UPS

Primary-Side Switch

High-Speed Power Switching Applications


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