IXTN5N250

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Input Capacitance :

8.56 nF

Mount :

Chassis Mount

Max Power Dissipation :

700 W

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Drain to Source Breakdown Voltage :

2.5kV

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Mounting Type :

Chassis Mount

Power Dissipation-Max (Abs) :

700 W

Fall Time (Typ) :

44 ns

Product Category :

Discrete Semiconductor Modules

Rds On Max :

8.8 Ω

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain to Source Resistance :

8.8 Ω

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

JESD-30 Code :

R-PUFM-X4

Vgs(th) (Max) @ Id :

5V @ 1mA

Pin Count :

4

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

8560pF @ 25V

Series :

--

Continuous Drain Current (ID) :

5A

Number of Terminations :

4

Min Operating Temperature :

-55 °C

Power Dissipation :

700W

Number of Elements :

1

Drain to Source Voltage (Vdss) :

2500V

Rise Time :

20ns

Turn-Off Delay Time :

90 ns

Manufacturer :

IXYS

Terminal Position :

UPPER

Packaging :

Tube

Package :

Tube

Drain-source On Resistance-Max :

8.8 Ω

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

5A

Package Shape :

RECTANGULAR

Product Type :

Discrete Semiconductor Modules

Max Operating Temperature :

150 °C

Case Connection :

Isolated

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

8.8 Ω @ 2.5A, 10V

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

RoHS :

Compliant

DS Breakdown Voltage-Min :

2500 V

Surface Mount :

No

Avalanche Energy Rating (Eas) :

2500 mJ

Maximum Operating Temperature :

+ 150 C

Base Product Number :

IXTN5

Number of Channels :

1 Channel

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

20A

Supplier Device Package :

SOT-227B

Brand :

IXYS

Element Configuration :

Single

FET Type :

N-Channel

Mounting Style :

Chassis Mount

Power Dissipation (Max) :

700W (Tc)

Published :

2010

Package / Case :

SOT-227-4, miniBLOC

Number of Terminals :

4

Power Dissipation-Max :

700W Tc