IXTN550N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Content :

1pc(s)

Number of Terminations :

4

Terminal Form :

UNSPECIFIED

Tradename :

HiPerFET

Case Connection :

Isolated

Power Dissipation (Max) :

940W (Tc)

Transistor Polarity :

N-Channel

Fall Time (Typ) :

230 ns

Series :

GigaMOS™, TrenchT2™

Channels :

1

Output Voltage :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55 V

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

1650 A

Terminal Finish :

Nickel (Ni)

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Enclosure :

SOT 227B

Pin Count :

4

Max. operating temperature :

+175°C

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 100A, 10V

Package :

Tube

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

550A Tc

ECCN Code :

EAR99

Packaging :

Tube

Vgs (Max) :

±20V

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

940 W

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.0013 Ω

Turn On Delay Time :

45 ns

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

595nC @ 10V

Number of Elements :

1

RoHS :

Details

Manufacturer :

IXYS

Product Category :

Discrete Semiconductor Modules

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Power Dissipation-Max :

940W Tc

Mount :

Chassis Mount

Package Shape :

RECTANGULAR

Manuf. code :

IXY

Turn-Off Delay Time :

90 ns

JESD-30 Code :

R-PUFM-X4

Maximum Operating Temperature :

+ 175 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

Discrete Semiconductor Modules

Nominal Supply Current :

200A

Product :

Power MOSFET Modules

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-227-4, miniBLOC

Terminal Position :

UPPER

Base Product Number :

IXTN550

Drain to Source Voltage (Vdss) :

55V

Number of Channels :

1 Channel

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V

Continuous Drain Current (ID) :

550A

Vgs(th) (Max) @ Id :

4V @ 250µA

Brand :

IXYS

Supplier Device Package :

SOT-227B

Rise Time :

40ns

Drain Current-Max (Abs) (ID) :

550 A

Published :

2009

Power (max) P(TOT) :

940W

Output Current :

550A

Type :

N-Channel

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

17 Weeks

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Terminals :

4

Transistor Element Material :

SILICON

Mounting Style :

Chassis Mount

Number of Drivers :

1

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)