IXTN550N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

4

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 100A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Channels :

1

Base Product Number :

IXTN550

Rise Time :

40ns

Transistor Polarity :

N-Channel

Mounting Type :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

550A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

not_compliant

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Product :

Power MOSFET Modules

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

550 A

Product Status :

Active

Tradename :

HiPerFET

Output Voltage :

55V

Maximum Operating Temperature :

+ 175 C

Operating Mode :

ENHANCEMENT MODE

Power (max) P(TOT) :

940W

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Factory Lead Time :

17 Weeks

Mounting Style :

Chassis Mount

Operating Temperature :

-55°C~175°C TJ

Content :

1pc(s)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

Product Category :

Discrete Semiconductor Modules

Drain-source On Resistance-Max :

0.0013 Ω

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

55V

Turn On Delay Time :

45 ns

Manufacturer :

IXYS

Output Current :

550A

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

1650 A

Pin Count :

4

Max. operating temperature :

+175°C

Package / Case :

SOT-227-4, miniBLOC

Package :

Tube

FET Feature :

--

Series :

GigaMOS™, TrenchT2™

Terminal Finish :

Nickel (Ni)

Polarity/Channel Type :

N-Channel

Mount :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Enclosure :

SOT 227B

Packaging :

Tube

Number of Channels :

1 Channel

Manuf. code :

IXY

Gate Charge (Qg) (Max) @ Vgs :

595nC @ 10V

Fall Time (Typ) :

230 ns

Terminal Form :

UNSPECIFIED

Supplier Device Package :

SOT-227B

Continuous Drain Current (ID) :

550A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Brand :

IXYS

Published :

2009

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

RoHS :

Details

Nominal Supply Current :

200A

Case Connection :

Isolated

Type :

N-Channel

DS Breakdown Voltage-Min :

55 V

Turn-Off Delay Time :

90 ns

ECCN Code :

EAR99

Power Dissipation-Max :

940W Tc

Number of Drivers :

1

Qualification Status :

Not Qualified

Power Dissipation (Max) :

940W (Tc)

Terminal Position :

UPPER

Power Dissipation-Max (Abs) :

940 W

JESD-30 Code :

R-PUFM-X4

Product Type :

Discrete Semiconductor Modules

Input Capacitance (Ciss) (Max) @ Vds :

40000pF @ 25V