IXTN40P50P

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Mfr.Part #
IXTN40P50P
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET P-CH 500V 40A SOT227B
Stock
42,826
In Stock :
42,826

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Product :
Power MOSFET Modules
Drain Current-Max (Abs) (ID) :
40 A
Pin Count :
4
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.23Ohm
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Supplier Device Package :
SOT-227B
Number of Channels :
1 Channel
Rise Time :
59 ns
Power Dissipation-Max (Abs) :
890 W
Mounting Style :
Chassis Mount
Terminal Form :
UNSPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
205nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Chassis Mount
Brand :
IXYS
Base Product Number :
IXTN40
Published :
2013
Pulsed Drain Current-Max (IDM) :
120A
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
Product Type :
Discrete Semiconductor Modules
Input Capacitance (Ciss) (Max) @ Vds :
11500pF @ 25V
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Number of Elements :
1
Polarity/Channel Type :
P-Channel
Lead Free :
Lead Free
Mount :
Chassis Mount
Power Dissipation-Max :
890W Tc
Terminal Position :
UPPER
Power Dissipation (Max) :
890W (Tc)
Product Category :
Discrete Semiconductor Modules
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
28 Weeks
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4V @ 1mA
FET Feature :
--
Type :
Polar Power MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
JESD-30 Code :
R-PUFM-X4
Number of Terminals :
4
Terminal Finish :
Nickel
Reach Compliance Code :
Unknown
Avalanche Energy Rating (Eas) :
3500 mJ
Drain to Source Breakdown Voltage :
-500V
Series :
PolarP™
Number of Terminations :
4
FET Type :
P-Channel
Rds On (Max) @ Id, Vgs :
230m Ω @ 500mA, 10V
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Package :
Tube
Case Connection :
Isolated
Transistor Polarity :
P-Channel
Product Status :
Active
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
40A
Drain to Source Voltage (Vdss) :
500V
Package / Case :
SOT-227-4, miniBLOC
DS Breakdown Voltage-Min :
500 V
Power Dissipation :
890W
Datasheets
IXTN40P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN40P50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Chassis Mount, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, IXTN40P50P pinout, IXTN40P50P datasheet PDF, IXTN40P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN40P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN40P50P


P-Channel Tube 230m Ω @ 500mA, 10V ±20V 11500pF @ 25V 205nC @ 10V 500V SOT-227-4, miniBLOC

IXTN40P50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3500 mJ.A device's maximum input capacitance is 11500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 40 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTN40P50P Features


the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of -500V voltage
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)


IXTN40P50P Applications


There are a lot of IXYS
IXTN40P50P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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