IXTN40P50P
- Mfr.Part #
- IXTN40P50P
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 40A SOT227B
- Stock
- 42,826
- In Stock :
- 42,826
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Product :
- Power MOSFET Modules
- Drain Current-Max (Abs) (ID) :
- 40 A
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.23Ohm
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- SOT-227B
- Number of Channels :
- 1 Channel
- Rise Time :
- 59 ns
- Power Dissipation-Max (Abs) :
- 890 W
- Mounting Style :
- Chassis Mount
- Terminal Form :
- UNSPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Chassis Mount
- Brand :
- IXYS
- Base Product Number :
- IXTN40
- Published :
- 2013
- Pulsed Drain Current-Max (IDM) :
- 120A
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Maximum Operating Temperature :
- + 150 C
- Pbfree Code :
- yes
- Product Type :
- Discrete Semiconductor Modules
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 25V
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Polarity/Channel Type :
- P-Channel
- Lead Free :
- Lead Free
- Mount :
- Chassis Mount
- Power Dissipation-Max :
- 890W Tc
- Terminal Position :
- UPPER
- Power Dissipation (Max) :
- 890W (Tc)
- Product Category :
- Discrete Semiconductor Modules
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 28 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- FET Feature :
- --
- Type :
- Polar Power MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-30 Code :
- R-PUFM-X4
- Number of Terminals :
- 4
- Terminal Finish :
- Nickel
- Reach Compliance Code :
- Unknown
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Drain to Source Breakdown Voltage :
- -500V
- Series :
- PolarP™
- Number of Terminations :
- 4
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 500mA, 10V
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Case Connection :
- Isolated
- Transistor Polarity :
- P-Channel
- Product Status :
- Active
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 40A
- Drain to Source Voltage (Vdss) :
- 500V
- Package / Case :
- SOT-227-4, miniBLOC
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation :
- 890W
- Datasheets
- IXTN40P50P

P-Channel Tube 230m Ω @ 500mA, 10V ±20V 11500pF @ 25V 205nC @ 10V 500V SOT-227-4, miniBLOC
IXTN40P50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3500 mJ.A device's maximum input capacitance is 11500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 40 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTN40P50P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of -500V voltage
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)
IXTN40P50P Applications
There are a lot of IXYS
IXTN40P50P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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