IXFB82N60Q3

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Mfr.Part #
IXFB82N60Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 82A PLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
75m Ω @ 41A, 10V
Tradename :
HiPerFET
Number of Terminations :
3
Product Category :
MOSFET
FET Feature :
--
Power Dissipation :
1.56kW
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.075Ohm
Number of Channels :
1 Channel
Pulsed Drain Current-Max (IDM) :
240A
JESD-30 Code :
R-PSIP-T3
Package Shape :
RECTANGULAR
Series :
HiPerFET™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Drain to Source Voltage (Vdss) :
600V
Factory Lead Time :
26 Weeks
Power Dissipation-Max :
1560W Tc
Maximum Operating Temperature :
+150 °C
Power Dissipation (Max) :
1560W (Tc)
Avalanche Energy Rating (Eas) :
4000 mJ
Surface Mount :
No
Package :
Tube
Transistor Polarity :
N-Channel
Number of Pins :
264
Published :
2011
Case Connection :
DRAIN
FET Type :
N-Channel
Channel Type :
N
Package / Case :
TO-264-3, TO-264AA
Drain Current-Max (Abs) (ID) :
82 A
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Configuration :
Single
Height :
26.59mm
Current - Continuous Drain (Id) @ 25°C :
82A Tc
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
1560 W
Turn-Off Delay Time :
60 ns
Width :
5.31mm
Transistor Type :
1 N-Channel
Product Type :
MOSFET
RoHS :
Details
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Mount :
Through Hole
Pin Count :
3
Base Product Number :
IXFB82
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
-55 °C
Input Capacitance (Ciss) (Max) @ Vds :
13500pF @ 25V
Turn On Delay Time :
40 ns
Number of Elements :
1
Manufacturer :
IXYS
Vgs (Max) :
±30V
Number of Elements per Chip :
1
Mounting Type :
Through Hole
Supplier Device Package :
PLUS264™
Transistor Application :
SWITCHING
Rise Time :
300ns
Continuous Drain Current (ID) :
82A
Gate Charge (Qg) (Max) @ Vgs :
275nC @ 10V
Length :
20.29mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
600V
Vgs(th) (Max) @ Id :
6.5V @ 8mA
DS Breakdown Voltage-Min :
600 V
Number of Terminals :
3
Element Configuration :
Single
Qualification Status :
Not Qualified
Package Type :
PLUS264
Reach Compliance Code :
Compliant
Terminal Position :
Single
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFB82N60Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB82N60Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:264, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFB82N60Q3 pinout, IXFB82N60Q3 datasheet PDF, IXFB82N60Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB82N60Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB82N60Q3


N-Channel Tube 75m Ω @ 41A, 10V ±30V 13500pF @ 25V 275nC @ 10V 600V TO-264-3, TO-264AA

IXFB82N60Q3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 13500pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 82 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 40 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB82N60Q3 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 240A.
a 600V drain to source voltage (Vdss)


IXFB82N60Q3 Applications


There are a lot of IXYS
IXFB82N60Q3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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