IXFB82N60Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

-55 °C

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

6.5V @ 8mA

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

300ns

Pulsed Drain Current-Max (IDM) :

240A

Terminal Form :

THROUGH-HOLE

Number of Pins :

264

Number of Terminations :

3

Channel Mode :

Enhancement

Length :

20.29mm

Operating Temperature :

-55°C~150°C TJ

Number of Elements per Chip :

1

Drain Current-Max (Abs) (ID) :

82 A

Factory Lead Time :

26 Weeks

Package Type :

PLUS264

Number of Channels :

1 Channel

Vgs (Max) :

±30V

Power Dissipation :

1.56kW

Product Category :

MOSFET

FET Type :

N-Channel

Surface Mount :

No

Brand :

IXYS

Package :

Tube

Drain to Source Voltage (Vdss) :

600V

Avalanche Energy Rating (Eas) :

4000 mJ

Height :

26.59mm

Package Shape :

RECTANGULAR

Pin Count :

3

Terminal Position :

Single

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

1560W (Tc)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

60 ns

Tradename :

HiPerFET

Continuous Drain Current (ID) :

82A

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

75m Ω @ 41A, 10V

Supplier Device Package :

PLUS264™

Turn On Delay Time :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 10V

Published :

2011

Package / Case :

TO-264-3, TO-264AA

Power Dissipation-Max (Abs) :

1560 W

Number of Elements :

1

Case Connection :

DRAIN

Power Dissipation-Max :

1560W Tc

Drain to Source Breakdown Voltage :

600V

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Transistor Type :

1 N-Channel

Configuration :

Single

Drain-source On Resistance-Max :

0.075Ohm

Width :

5.31mm

RoHS Status :

ROHS3 Compliant

RoHS :

Details

FET Feature :

--

Number of Terminals :

3

DS Breakdown Voltage-Min :

600 V

Mounting Type :

Through Hole

Series :

HiPerFET™

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

Packaging :

Tube

Element Configuration :

Single

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+150 °C

Base Product Number :

IXFB82

Product Type :

MOSFET

Product Status :

Active

Qualification Status :

Not Qualified