IXFB100N50P
- Mfr.Part #
- IXFB100N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 100A PLUS264
- Stock
- 924
- In Stock :
- 924
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Configuration :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Product Type :
- MOSFET
- Manufacturer :
- IXYS
- Radiation Hardening :
- No
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 250A
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Case Connection :
- DRAIN
- Width :
- 5.31 mm
- Series :
- HiPerFET™, PolarHT™
- Length :
- 20.29 mm
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Resistance :
- 49mOhm
- Continuous Drain Current (ID) :
- 100A
- Number of Terminals :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 50A, 10V
- Brand :
- IXYS
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Fall Time (Typ) :
- 26 ns
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 20000pF @ 25V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 1.25kW
- Number of Terminations :
- 3
- Product Status :
- Active
- Type :
- PolarHV HiPerFET Power MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 29ns
- Base Product Number :
- IXFB100
- Transistor Application :
- SWITCHING
- Supplier Device Package :
- PLUS264™
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Mounting Style :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Height :
- 26.59 mm
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 110 ns
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 1890W Tc
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Factory Lead Time :
- 35 Weeks
- Drain-source On Resistance-Max :
- 0.049 Ω
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- --
- Tradename :
- HiPerFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Published :
- 2005
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 1890W (Tc)
- JESD-30 Code :
- R-PSIP-T3
- Max Operating Temperature :
- 150°C
- FET Feature :
- --
- Datasheets
- IXFB100N50P
IXFB100N50P Documents

N-Channel Tube 49m Ω @ 50A, 10V ±30V 20000pF @ 25V 240nC @ 10V 500V TO-264-3, TO-264AA
IXFB100N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 20000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB100N50P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 250A.
a 500V drain to source voltage (Vdss)
IXFB100N50P Applications
There are a lot of IXYS
IXFB100N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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