IXFB100N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

5.31 mm

JESD-609 Code :

e1

Power Dissipation-Max :

1890W Tc

Package / Case :

TO-264-3, TO-264AA

Tradename :

HiPerFET

Drain-source On Resistance-Max :

0.049 Ω

Published :

2005

Product Status :

Active

Product Category :

MOSFET

Surface Mount :

No

Number of Terminations :

3

Drain to Source Breakdown Voltage :

500V

FET Feature :

--

Vgs(th) (Max) @ Id :

5V @ 8mA

Resistance :

49mOhm

Avalanche Energy Rating (Eas) :

5000 mJ

Power Dissipation (Max) :

1890W (Tc)

Subcategory :

MOSFETs

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

100A

Terminal Position :

Single

Length :

20.29 mm

Pulsed Drain Current-Max (IDM) :

250A

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

49m Ω @ 50A, 10V

Brand :

IXYS

Lead Free :

Lead Free

Operating Temperature :

--

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

110 ns

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

26 ns

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Series :

HiPerFET™, PolarHT™

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

35 Weeks

Transistor Element Material :

SILICON

Min Operating Temperature :

-55°C

Number of Pins :

3

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500 V

FET Type :

N-Channel

Pbfree Code :

yes

Packaging :

Tube

Package Shape :

RECTANGULAR

RoHS :

Details

Rise Time :

29ns

Product Type :

MOSFET

Number of Elements :

1

Power Dissipation :

1.25kW

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Mounting Style :

Through Hole

Configuration :

Single

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Number of Terminals :

3

Type :

PolarHV HiPerFET Power MOSFET

Height :

26.59 mm

Number of Channels :

1 Channel

Radiation Hardening :

No

Base Product Number :

IXFB100

Max Operating Temperature :

150°C

Supplier Device Package :

PLUS264™

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-30 Code :

R-PSIP-T3

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V