IXFB100N50P

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Mfr.Part #
IXFB100N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 100A PLUS264
Stock
924
In Stock :
924

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Maximum Operating Temperature :
+ 150 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFB100
Package / Case :
TO-264-3, TO-264AA
JESD-609 Code :
e1
Element Configuration :
Single
Brand :
IXYS
Terminal Form :
THROUGH-HOLE
Turn-Off Delay Time :
110 ns
Channel Mode :
Enhancement
Product Type :
MOSFET
Pin Count :
3
Drain-source On Resistance-Max :
0.049 Ω
JESD-30 Code :
R-PSIP-T3
Operating Temperature :
--
Power Dissipation-Max :
1890W Tc
Number of Terminations :
3
Packaging :
Tube
Max Operating Temperature :
150°C
Configuration :
Single
Package :
Tube
Vgs(th) (Max) @ Id :
5V @ 8mA
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Height :
26.59 mm
Power Dissipation :
1.25kW
Factory Lead Time :
35 Weeks
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Fall Time (Typ) :
26 ns
Lead Free :
Lead Free
Mount :
Through Hole
Radiation Hardening :
No
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Vgs (Max) :
±30V
Surface Mount :
No
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
500V
Reach Compliance Code :
Compliant
Type :
PolarHV HiPerFET Power MOSFET
Product Status :
Active
Continuous Drain Current (ID) :
100A
Transistor Polarity :
N-Channel
Subcategory :
MOSFETs
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Series :
HiPerFET™, PolarHT™
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
250A
Resistance :
49mOhm
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
49m Ω @ 50A, 10V
Terminal Position :
Single
Number of Terminals :
3
Width :
5.31 mm
Number of Pins :
3
Min Operating Temperature :
-55°C
Power Dissipation (Max) :
1890W (Tc)
Avalanche Energy Rating (Eas) :
5000 mJ
Supplier Device Package :
PLUS264™
Rise Time :
29ns
FET Feature :
--
Transistor Application :
SWITCHING
Tradename :
HiPerFET
Published :
2005
Mounting Style :
Through Hole
Transistor Element Material :
SILICON
Product Category :
MOSFET
Length :
20.29 mm
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Drain to Source Breakdown Voltage :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 25V
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Datasheets
IXFB100N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB100N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:--, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Type:PolarHV HiPerFET Power MOSFET, Number of Pins:3, IXFB100N50P pinout, IXFB100N50P datasheet PDF, IXFB100N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB100N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB100N50P


N-Channel Tube 49m Ω @ 50A, 10V ±30V 20000pF @ 25V 240nC @ 10V 500V TO-264-3, TO-264AA

IXFB100N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 20000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB100N50P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 250A.
a 500V drain to source voltage (Vdss)


IXFB100N50P Applications


There are a lot of IXYS
IXFB100N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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