IXFB100N50P
- Mfr.Part #
- IXFB100N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 100A PLUS264
- Stock
- 924
- In Stock :
- 924
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2005
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-264-3, TO-264AA
- Number of Elements :
- 1
- Configuration :
- Single
- Case Connection :
- DRAIN
- Min Operating Temperature :
- -55°C
- Surface Mount :
- No
- Product Status :
- Active
- Brand :
- IXYS
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 1890W Tc
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Operating Temperature :
- --
- Max Operating Temperature :
- 150°C
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 50A, 10V
- Continuous Drain Current (ID) :
- 100A
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 20000pF @ 25V
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1 Channel
- JESD-609 Code :
- e1
- Package :
- Tube
- Mounting Style :
- Through Hole
- Length :
- 20.29 mm
- DS Breakdown Voltage-Min :
- 500 V
- Product Category :
- MOSFET
- Manufacturer :
- IXYS
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory :
- MOSFETs
- Width :
- 5.31 mm
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Resistance :
- 49mOhm
- Type :
- PolarHV HiPerFET Power MOSFET
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Power Dissipation (Max) :
- 1890W (Tc)
- Rise Time :
- 29ns
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Fall Time (Typ) :
- 26 ns
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Height :
- 26.59 mm
- Factory Lead Time :
- 35 Weeks
- Tradename :
- HiPerFET
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 30V
- Base Product Number :
- IXFB100
- Supplier Device Package :
- PLUS264™
- Drain-source On Resistance-Max :
- 0.049 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Pbfree Code :
- yes
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 110 ns
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 250A
- Lead Free :
- Lead Free
- Series :
- HiPerFET™, PolarHT™
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSIP-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 1.25kW
- Datasheets
- IXFB100N50P

N-Channel Tube 49m Ω @ 50A, 10V ±30V 20000pF @ 25V 240nC @ 10V 500V TO-264-3, TO-264AA
IXFB100N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 20000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB100N50P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 250A.
a 500V drain to source voltage (Vdss)
IXFB100N50P Applications
There are a lot of IXYS
IXFB100N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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