IXFB100N50P

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Mfr.Part #
IXFB100N50P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 100A PLUS264
Stock
924
In Stock :
924

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Channels :
1 Channel
Vgs (Max) :
±30V
JESD-609 Code :
e1
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Base Product Number :
IXFB100
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
500V
Pbfree Code :
yes
Rise Time :
29ns
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Type :
PolarHV HiPerFET Power MOSFET
Mounting Type :
Through Hole
Product Status :
Active
Configuration :
Single
Transistor Polarity :
N-Channel
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
49m Ω @ 50A, 10V
Number of Terminations :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Tube
Operating Temperature :
--
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Height :
26.59 mm
Vgs(th) (Max) @ Id :
5V @ 8mA
Product Type :
MOSFET
Mounting Style :
Through Hole
Turn-Off Delay Time :
110 ns
Power Dissipation-Max :
1890W Tc
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
250A
Lead Free :
Lead Free
Terminal Position :
Single
Drain-source On Resistance-Max :
0.049 Ω
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
5000 mJ
Brand :
IXYS
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
1890W (Tc)
Number of Terminals :
3
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
100A
Package :
Tube
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2005
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
PLUS264™
Package / Case :
TO-264-3, TO-264AA
Resistance :
49mOhm
Min Operating Temperature :
-55°C
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Series :
HiPerFET™, PolarHT™
Width :
5.31 mm
Fall Time (Typ) :
26 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
35 Weeks
Max Operating Temperature :
150°C
FET Feature :
--
Length :
20.29 mm
Drain to Source Breakdown Voltage :
500V
Channel Mode :
Enhancement
Pin Count :
3
Radiation Hardening :
No
FET Type :
N-Channel
DS Breakdown Voltage-Min :
500 V
Product Category :
MOSFET
Subcategory :
MOSFETs
Power Dissipation :
1.25kW
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSIP-T3
Gate to Source Voltage (Vgs) :
30V
Case Connection :
DRAIN
Datasheets
IXFB100N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB100N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Type:PolarHV HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:--, Package / Case:TO-264-3, TO-264AA, IXFB100N50P pinout, IXFB100N50P datasheet PDF, IXFB100N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB100N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB100N50P


N-Channel Tube 49m Ω @ 50A, 10V ±30V 20000pF @ 25V 240nC @ 10V 500V TO-264-3, TO-264AA

IXFB100N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 20000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB100N50P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 250A.
a 500V drain to source voltage (Vdss)


IXFB100N50P Applications


There are a lot of IXYS
IXFB100N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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