IXFB100N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

110 ns

Tradename :

HiPerFET

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Height :

26.59 mm

Product Type :

MOSFET

Radiation Hardening :

No

Terminal Position :

Single

Pin Count :

3

Channel Mode :

Enhancement

Length :

20.29 mm

Rise Time :

29ns

FET Type :

N-Channel

Fall Time (Typ) :

26 ns

Case Connection :

DRAIN

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

500 V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

500V

Drain-source On Resistance-Max :

0.049 Ω

Width :

5.31 mm

Type :

PolarHV HiPerFET Power MOSFET

Package / Case :

TO-264-3, TO-264AA

Qualification Status :

Not Qualified

Subcategory :

MOSFETs

RoHS Status :

ROHS3 Compliant

Package :

Tube

Brand :

IXYS

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Min Operating Temperature :

-55°C

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

500V

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Lead Free :

Lead Free

Series :

HiPerFET™, PolarHT™

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Number of Elements :

1

JESD-609 Code :

e1

Number of Terminals :

3

Operating Temperature :

--

Power Dissipation-Max :

1890W Tc

Rds On (Max) @ Id, Vgs :

49m Ω @ 50A, 10V

Power Dissipation (Max) :

1890W (Tc)

Max Operating Temperature :

150°C

Number of Channels :

1 Channel

Factory Lead Time :

35 Weeks

Packaging :

Tube

Transistor Polarity :

N-Channel

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFB100

Number of Pins :

3

Transistor Type :

1 N-Channel

Surface Mount :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Published :

2005

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Power Dissipation :

1.25kW

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

5000 mJ

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Supplier Device Package :

PLUS264™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 8mA

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

250A

Resistance :

49mOhm