IXFB100N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.31 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Rise Time :

29ns

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Radiation Hardening :

No

Number of Terminations :

3

Lead Free :

Lead Free

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

PLUS264™

Max Operating Temperature :

150°C

Resistance :

49mOhm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

500V

Power Dissipation (Max) :

1890W (Tc)

Package :

Tube

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

250A

Product Type :

MOSFET

Mount :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

1890W Tc

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

500 V

Element Configuration :

Single

JESD-609 Code :

e1

Operating Temperature :

--

RoHS :

Details

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Transistor Type :

1 N-Channel

Min Operating Temperature :

-55°C

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXFB100

Height :

26.59 mm

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Product Status :

Active

Configuration :

Single

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

Published :

2005

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

110 ns

Mounting Style :

Through Hole

Transistor Element Material :

SILICON

Manufacturer :

IXYS

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.049 Ω

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

5V @ 8mA

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Number of Pins :

3

Avalanche Energy Rating (Eas) :

5000 mJ

Factory Lead Time :

35 Weeks

Fall Time (Typ) :

26 ns

JESD-30 Code :

R-PSIP-T3

Type :

PolarHV HiPerFET Power MOSFET

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Series :

HiPerFET™, PolarHT™

Surface Mount :

No

Length :

20.29 mm

Power Dissipation :

1.25kW

Package Shape :

RECTANGULAR

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

49m Ω @ 50A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

FET Feature :

--

Subcategory :

MOSFETs