IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Package / Case :
- TO-264-3, TO-264AA
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Supplier Device Package :
- PLUS264™
- Power Dissipation (Max) :
- 1500W (Tc)
- DS Breakdown Voltage-Min :
- 100 V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 23 nF
- Drain Current-Max (Abs) (ID) :
- 300 A
- Base Product Number :
- IXFB300
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Rds On Max :
- 5.5 mΩ
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Power Dissipation-Max (Abs) :
- 1500 W
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.5kW
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Power Dissipation-Max :
- 1500W Tc
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1.5 kW
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HiPerFET™, PolarP2™
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- RoHS :
- Compliant
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 900A
- Transistor Polarity :
- N-Channel
- Published :
- 2014
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Max Operating Temperature :
- 175 °C
- Factory Lead Time :
- 26 Weeks
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Maximum Operating Temperature :
- + 175 C
- JESD-30 Code :
- R-PSIP-T3
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Tradename :
- HiPerFET
- Min Operating Temperature :
- -55 °C
- Minimum Operating Temperature :
- - 55 C
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 300A
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- IXFB300N10P

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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