IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- PLUS264™
- Pulsed Drain Current-Max (IDM) :
- 900A
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Product Category :
- MOSFET
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Pbfree Code :
- yes
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSIP-T3
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Product Status :
- Active
- Package / Case :
- TO-264-3, TO-264AA
- Drain to Source Voltage (Vdss) :
- 100V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Max Operating Temperature :
- 175 °C
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Type :
- 1 N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 26 Weeks
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Series :
- HiPerFET™, PolarP2™
- Input Capacitance :
- 23 nF
- Published :
- 2014
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXFB300
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- RoHS :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Min Operating Temperature :
- -55 °C
- Brand :
- IXYS
- Continuous Drain Current (ID) :
- 300A
- Drain Current-Max (Abs) (ID) :
- 300 A
- Maximum Operating Temperature :
- + 175 C
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Package Shape :
- RECTANGULAR
- Rds On Max :
- 5.5 mΩ
- DS Breakdown Voltage-Min :
- 100 V
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 1500 W
- Power Dissipation (Max) :
- 1500W (Tc)
- Power Dissipation :
- 1.5kW
- Number of Terminals :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Number of Pins :
- 3
- Power Dissipation-Max :
- 1500W Tc
- Max Power Dissipation :
- 1.5 kW
- Gate to Source Voltage (Vgs) :
- 20V
- Product Type :
- MOSFET
- Mount :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Pin Count :
- 3
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Datasheets
- IXFB300N10P

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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