IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2014
- Number of Terminals :
- 3
- Power Dissipation-Max :
- 1500W Tc
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Surface Mount :
- No
- Packaging :
- Tube
- Number of Terminations :
- 3
- Package :
- Tube
- FET Type :
- N-Channel
- Max Operating Temperature :
- 175 °C
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Rds On Max :
- 5.5 mΩ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 1.5kW
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Additional Feature :
- AVALANCHE RATED
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 300A
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation (Max) :
- 1500W (Tc)
- Series :
- HiPerFET™, PolarP2™
- DS Breakdown Voltage-Min :
- 100 V
- Package Shape :
- RECTANGULAR
- RoHS :
- Compliant
- Input Capacitance :
- 23 nF
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- PLUS264™
- Operating Temperature :
- -55°C~175°C TJ
- Max Power Dissipation :
- 1.5 kW
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Transistor Type :
- 1 N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Tradename :
- HiPerFET
- FET Feature :
- --
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 1500 W
- JESD-30 Code :
- R-PSIP-T3
- JESD-609 Code :
- e1
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Compliant
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Elements :
- 1
- Base Product Number :
- IXFB300
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Pulsed Drain Current-Max (IDM) :
- 900A
- Factory Lead Time :
- 26 Weeks
- Package / Case :
- TO-264-3, TO-264AA
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 300 A
- Pbfree Code :
- yes
- Terminal Form :
- THROUGH-HOLE
- Min Operating Temperature :
- -55 °C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Datasheets
- IXFB300N10P

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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