IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2014
Number of Terminals :
3
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
1500W (Tc)
Max Operating Temperature :
175 °C
Factory Lead Time :
26 Weeks
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
100 V
Vgs (Max) :
±20V
Terminal Position :
Single
JESD-609 Code :
e1
Drain Current-Max (Abs) (ID) :
300 A
Continuous Drain Current (ID) :
300A
Transistor Type :
1 N-Channel
Number of Elements :
1
Input Capacitance :
23 nF
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
3000 mJ
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
900A
Drain to Source Voltage (Vdss) :
100V
Power Dissipation-Max (Abs) :
1500 W
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Rds On Max :
5.5 mΩ
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Series :
HiPerFET™, PolarP2™
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
RoHS :
Compliant
Mounting Type :
Through Hole
Power Dissipation-Max :
1500W Tc
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Min Operating Temperature :
-55 °C
Product Category :
MOSFET
Base Product Number :
IXFB300
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Surface Mount :
No
Number of Pins :
3
FET Type :
N-Channel
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Mount :
Through Hole
Packaging :
Tube
Tradename :
HiPerFET
Package / Case :
TO-264-3, TO-264AA
Terminal Form :
THROUGH-HOLE
Package :
Tube
Maximum Operating Temperature :
+ 175 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
PLUS264™
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Max Power Dissipation :
1.5 kW
FET Feature :
--
JESD-30 Code :
R-PSIP-T3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain-source On Resistance-Max :
0.0055Ohm
Mounting Style :
Through Hole
Product Type :
MOSFET
Power Dissipation :
1.5kW
Operating Temperature :
-55°C~175°C TJ
Brand :
IXYS
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Pin Count :
3
Number of Terminations :
3
Datasheets
IXFB300N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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