IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Min Operating Temperature :
- -55 °C
- Package :
- Tube
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 300A
- Published :
- 2014
- Terminal Position :
- Single
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS :
- Compliant
- Maximum Operating Temperature :
- + 175 C
- Package / Case :
- TO-264-3, TO-264AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 100 V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 1500 W
- Operating Temperature :
- -55°C~175°C TJ
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation :
- 1.5kW
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 300 A
- Mount :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Input Capacitance :
- 23 nF
- Series :
- HiPerFET™, PolarP2™
- Power Dissipation-Max :
- 1500W Tc
- Pbfree Code :
- yes
- Rds On Max :
- 5.5 mΩ
- Package Shape :
- RECTANGULAR
- Tradename :
- HiPerFET
- Power Dissipation (Max) :
- 1500W (Tc)
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.5 kW
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Base Product Number :
- IXFB300
- Max Operating Temperature :
- 175 °C
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- PLUS264™
- Factory Lead Time :
- 26 Weeks
- Case Connection :
- DRAIN
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 900A
- Datasheets
- IXFB300N10P

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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