IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 26 Weeks
- Number of Channels :
- 1 Channel
- Channel Mode :
- Enhancement
- Max Power Dissipation :
- 1.5 kW
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Power Dissipation-Max :
- 1500W Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 300 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- Package :
- Tube
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e1
- FET Feature :
- --
- Input Capacitance :
- 23 nF
- Tradename :
- HiPerFET
- Supplier Device Package :
- PLUS264™
- RoHS :
- Compliant
- DS Breakdown Voltage-Min :
- 100 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 900A
- Published :
- 2014
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 1500 W
- Series :
- HiPerFET™, PolarP2™
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Maximum Operating Temperature :
- + 175 C
- Base Product Number :
- IXFB300
- Product Type :
- MOSFET
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Min Operating Temperature :
- -55 °C
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Product Category :
- MOSFET
- Power Dissipation :
- 1.5kW
- Continuous Drain Current (ID) :
- 300A
- Additional Feature :
- AVALANCHE RATED
- Rds On Max :
- 5.5 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Mount :
- Through Hole
- Max Operating Temperature :
- 175 °C
- Power Dissipation (Max) :
- 1500W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-264-3, TO-264AA
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Datasheets
- IXFB300N10P
IXFB300N10P Documents

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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