IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Mounting Style :
Through Hole
Base Product Number :
IXFB300
RoHS :
Compliant
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Avalanche Energy Rating (Eas) :
3000 mJ
Product Type :
MOSFET
Minimum Operating Temperature :
- 55 C
Min Operating Temperature :
-55 °C
Mount :
Through Hole
Product Status :
Active
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
PLUS264™
DS Breakdown Voltage-Min :
100 V
Channel Mode :
Enhancement
Brand :
IXYS
Packaging :
Tube
Pin Count :
3
Package Shape :
RECTANGULAR
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e1
Number of Elements :
1
Surface Mount :
No
Rds On Max :
5.5 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
1500W Tc
Input Capacitance :
23 nF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
300A
Number of Channels :
1 Channel
Drain Current-Max (Abs) (ID) :
300 A
Reach Compliance Code :
Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Category :
MOSFET
Power Dissipation (Max) :
1500W (Tc)
Case Connection :
DRAIN
Package / Case :
TO-264-3, TO-264AA
Terminal Position :
Single
Additional Feature :
AVALANCHE RATED
Power Dissipation :
1.5kW
Factory Lead Time :
26 Weeks
JESD-30 Code :
R-PSIP-T3
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Published :
2014
Qualification Status :
Not Qualified
Max Power Dissipation :
1.5 kW
Max Operating Temperature :
175 °C
Pulsed Drain Current-Max (IDM) :
900A
Tradename :
HiPerFET
Number of Terminals :
3
FET Feature :
--
Vgs(th) (Max) @ Id :
5V @ 8mA
Drain-source On Resistance-Max :
0.0055Ohm
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Package :
Tube
Power Dissipation-Max (Abs) :
1500 W
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 175 C
Number of Terminations :
3
Series :
HiPerFET™, PolarP2™
Transistor Type :
1 N-Channel
Terminal Form :
THROUGH-HOLE
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Datasheets
IXFB300N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Terminations:3, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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