IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2014
Number of Terminals :
3
Power Dissipation-Max :
1500W Tc
Channel Mode :
Enhancement
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
Surface Mount :
No
Packaging :
Tube
Number of Terminations :
3
Package :
Tube
FET Type :
N-Channel
Max Operating Temperature :
175 °C
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
3000 mJ
Rds On Max :
5.5 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation :
1.5kW
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Additional Feature :
AVALANCHE RATED
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
300A
Maximum Operating Temperature :
+ 175 C
Power Dissipation (Max) :
1500W (Tc)
Series :
HiPerFET™, PolarP2™
DS Breakdown Voltage-Min :
100 V
Package Shape :
RECTANGULAR
RoHS :
Compliant
Input Capacitance :
23 nF
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Terminal Position :
Single
Manufacturer :
IXYS
Mounting Type :
Through Hole
Pin Count :
3
Transistor Element Material :
SILICON
Supplier Device Package :
PLUS264™
Operating Temperature :
-55°C~175°C TJ
Max Power Dissipation :
1.5 kW
ECCN Code :
EAR99
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Tradename :
HiPerFET
FET Feature :
--
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Drain-source On Resistance-Max :
0.0055Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
1500 W
JESD-30 Code :
R-PSIP-T3
JESD-609 Code :
e1
Mounting Style :
Through Hole
Reach Compliance Code :
Compliant
Product Status :
Active
Drain to Source Voltage (Vdss) :
100V
Number of Elements :
1
Base Product Number :
IXFB300
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs(th) (Max) @ Id :
5V @ 8mA
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Pulsed Drain Current-Max (IDM) :
900A
Factory Lead Time :
26 Weeks
Package / Case :
TO-264-3, TO-264AA
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
300 A
Pbfree Code :
yes
Terminal Form :
THROUGH-HOLE
Min Operating Temperature :
-55 °C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Datasheets
IXFB300N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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