IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Pbfree Code :
yes
Packaging :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Category :
MOSFET
Power Dissipation-Max (Abs) :
1500 W
Factory Lead Time :
26 Weeks
Package / Case :
TO-264-3, TO-264AA
Continuous Drain Current (ID) :
300A
JESD-30 Code :
R-PSIP-T3
Power Dissipation :
1.5kW
Series :
HiPerFET™, PolarP2™
Product Type :
MOSFET
Maximum Operating Temperature :
+ 175 C
Tradename :
HiPerFET
Number of Elements :
1
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFB300
Pulsed Drain Current-Max (IDM) :
900A
Rds On Max :
5.5 mΩ
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
0.0055Ohm
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
FET Feature :
--
Vgs (Max) :
±20V
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
RoHS :
Compliant
Transistor Polarity :
N-Channel
Package :
Tube
Drain to Source Voltage (Vdss) :
100V
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Brand :
IXYS
Vgs(th) (Max) @ Id :
5V @ 8mA
Case Connection :
DRAIN
Max Power Dissipation :
1.5 kW
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Operating Temperature :
-55°C~175°C TJ
Published :
2014
Power Dissipation-Max :
1500W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance :
23 nF
Avalanche Energy Rating (Eas) :
3000 mJ
Supplier Device Package :
PLUS264™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
300 A
Surface Mount :
No
Product Status :
Active
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
100 V
FET Type :
N-Channel
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Channel Mode :
Enhancement
Max Operating Temperature :
175 °C
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Power Dissipation (Max) :
1500W (Tc)
Number of Terminations :
3
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
Min Operating Temperature :
-55 °C
Datasheets
IXFB300N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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