IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175 °C
- Manufacturer :
- IXYS
- Supplier Device Package :
- PLUS264™
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Number of Elements :
- 1
- Rds On Max :
- 5.5 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Type :
- 1 N-Channel
- Max Power Dissipation :
- 1.5 kW
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Through Hole
- Surface Mount :
- No
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Published :
- 2014
- Transistor Polarity :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 1500W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 100 V
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- --
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Tradename :
- HiPerFET
- Power Dissipation-Max :
- 1500W Tc
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 900A
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Package / Case :
- TO-264-3, TO-264AA
- Mounting Style :
- Through Hole
- Series :
- HiPerFET™, PolarP2™
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Power Dissipation :
- 1.5kW
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Factory Lead Time :
- 26 Weeks
- RoHS :
- Compliant
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 300A
- Drain Current-Max (Abs) (ID) :
- 300 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- Packaging :
- Tube
- Power Dissipation-Max (Abs) :
- 1500 W
- Min Operating Temperature :
- -55 °C
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Maximum Operating Temperature :
- + 175 C
- Input Capacitance :
- 23 nF
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Package :
- Tube
- Base Product Number :
- IXFB300
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- FET Type :
- N-Channel
- Pin Count :
- 3
- Datasheets
- IXFB300N10P

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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