IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
100 V
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
900A
Power Dissipation-Max (Abs) :
1500 W
Transistor Type :
1 N-Channel
Factory Lead Time :
26 Weeks
Package Shape :
RECTANGULAR
Number of Elements :
1
Package :
Tube
Drain to Source Voltage (Vdss) :
100V
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Mounting Style :
Through Hole
Reach Compliance Code :
Compliant
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Product Status :
Active
Base Product Number :
IXFB300
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
Pbfree Code :
yes
Series :
HiPerFET™, PolarP2™
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Vgs(th) (Max) @ Id :
5V @ 8mA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Published :
2014
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
3
Case Connection :
DRAIN
Pin Count :
3
Number of Terminations :
3
Packaging :
Tube
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
THROUGH-HOLE
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Power Dissipation :
1.5 kW
FET Feature :
--
Qualification Status :
Not Qualified
Min Operating Temperature :
-55 °C
Number of Terminals :
3
Rds On Max :
5.5 mΩ
Max Operating Temperature :
175 °C
Avalanche Energy Rating (Eas) :
3000 mJ
JESD-30 Code :
R-PSIP-T3
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.0055Ohm
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Transistor Application :
SWITCHING
Terminal Position :
Single
Input Capacitance :
23 nF
Vgs (Max) :
±20V
Power Dissipation :
1.5kW
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
RoHS :
Compliant
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
PLUS264™
Drain Current-Max (Abs) (ID) :
300 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
1500W (Tc)
ECCN Code :
EAR99
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 175 C
Power Dissipation-Max :
1500W Tc
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-264-3, TO-264AA
Tradename :
HiPerFET
Continuous Drain Current (ID) :
300A
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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