IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
5V @ 8mA
Operating Temperature :
-55°C~175°C TJ
Number of Channels :
1 Channel
Input Capacitance :
23 nF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Power Dissipation-Max (Abs) :
1500 W
Surface Mount :
No
Base Product Number :
IXFB300
Number of Pins :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
ECCN Code :
EAR99
FET Feature :
--
Power Dissipation :
1.5kW
JESD-30 Code :
R-PSIP-T3
Rds On Max :
5.5 mΩ
Supplier Device Package :
PLUS264™
Brand :
IXYS
JESD-609 Code :
e1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Published :
2014
Min Operating Temperature :
-55 °C
Additional Feature :
AVALANCHE RATED
Factory Lead Time :
26 Weeks
Pin Count :
3
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.0055Ohm
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
300 A
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Vgs (Max) :
±20V
Number of Terminals :
3
Package / Case :
TO-264-3, TO-264AA
DS Breakdown Voltage-Min :
100 V
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Power Dissipation (Max) :
1500W (Tc)
Mount :
Through Hole
Avalanche Energy Rating (Eas) :
3000 mJ
Mounting Style :
Through Hole
Minimum Operating Temperature :
- 55 C
Terminal Position :
Single
Max Operating Temperature :
175 °C
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Product Status :
Active
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 175 C
Drain to Source Voltage (Vdss) :
100V
Series :
HiPerFET™, PolarP2™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Tradename :
HiPerFET
Channel Mode :
Enhancement
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
RoHS :
Compliant
Pulsed Drain Current-Max (IDM) :
900A
Continuous Drain Current (ID) :
300A
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Power Dissipation-Max :
1500W Tc
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Power Dissipation :
1.5 kW
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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