IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 900A
- Power Dissipation (Max) :
- 1500W (Tc)
- DS Breakdown Voltage-Min :
- 100 V
- Base Product Number :
- IXFB300
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 100V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 26 Weeks
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 175 C
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Compliant
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Min Operating Temperature :
- -55 °C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 300A
- Max Power Dissipation :
- 1.5 kW
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Power Dissipation-Max :
- 1500W Tc
- Packaging :
- Tube
- Package :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 300 A
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSIP-T3
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- JESD-609 Code :
- e1
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Input Capacitance :
- 23 nF
- Manufacturer :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Supplier Device Package :
- PLUS264™
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Published :
- 2014
- Power Dissipation :
- 1.5kW
- Power Dissipation-Max (Abs) :
- 1500 W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Tradename :
- HiPerFET
- Terminal Form :
- THROUGH-HOLE
- Series :
- HiPerFET™, PolarP2™
- Rds On Max :
- 5.5 mΩ
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Max Operating Temperature :
- 175 °C
- Datasheets
- IXFB300N10P

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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