IXFB300N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

5V @ 8mA

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1 Channel

Input Capacitance :

23 nF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Power Dissipation-Max (Abs) :

1500 W

Surface Mount :

No

Base Product Number :

IXFB300

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pbfree Code :

yes

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

ECCN Code :

EAR99

FET Feature :

--

Power Dissipation :

1.5kW

JESD-30 Code :

R-PSIP-T3

Rds On Max :

5.5 mΩ

Supplier Device Package :

PLUS264™

Brand :

IXYS

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

Published :

2014

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

26 Weeks

Pin Count :

3

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.0055Ohm

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

300 A

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Vgs (Max) :

±20V

Number of Terminals :

3

Package / Case :

TO-264-3, TO-264AA

DS Breakdown Voltage-Min :

100 V

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Power Dissipation (Max) :

1500W (Tc)

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

3000 mJ

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Max Operating Temperature :

175 °C

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 50A, 10V

Product Status :

Active

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 175 C

Drain to Source Voltage (Vdss) :

100V

Series :

HiPerFET™, PolarP2™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Tradename :

HiPerFET

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

279nC @ 10V

RoHS :

Compliant

Pulsed Drain Current-Max (IDM) :

900A

Continuous Drain Current (ID) :

300A

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Power Dissipation-Max :

1500W Tc

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Power Dissipation :

1.5 kW