IXFB300N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Terminal Form :

THROUGH-HOLE

Continuous Drain Current (ID) :

300A

FET Type :

N-Channel

Max Power Dissipation :

1.5 kW

Maximum Operating Temperature :

+ 175 C

Input Capacitance :

23 nF

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Supplier Device Package :

PLUS264™

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

3000 mJ

Power Dissipation :

1.5kW

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Drain-source On Resistance-Max :

0.0055Ohm

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-264-3, TO-264AA

Product Category :

MOSFET

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

900A

Drain Current-Max (Abs) (ID) :

300 A

Drain to Source Voltage (Vdss) :

100V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXFB300

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Max Operating Temperature :

175 °C

DS Breakdown Voltage-Min :

100 V

Product Type :

MOSFET

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

1500W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Manufacturer :

IXYS

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™, PolarP2™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

RoHS :

Compliant

Min Operating Temperature :

-55 °C

Brand :

IXYS

Factory Lead Time :

26 Weeks

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

1500 W

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

FET Feature :

--

Number of Pins :

3

Channel Mode :

Enhancement

ECCN Code :

EAR99

Surface Mount :

No

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Rds On Max :

5.5 mΩ

Gate Charge (Qg) (Max) @ Vgs :

279nC @ 10V

Vgs (Max) :

±20V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 50A, 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

1500W Tc

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Product Status :

Active

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 8mA

Number of Terminals :

3