IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Package / Case :
TO-264-3, TO-264AA
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
3000 mJ
Transistor Type :
1 N-Channel
Brand :
IXYS
Supplier Device Package :
PLUS264™
Power Dissipation (Max) :
1500W (Tc)
DS Breakdown Voltage-Min :
100 V
Pbfree Code :
yes
Operating Temperature :
-55°C~175°C TJ
Input Capacitance :
23 nF
Drain Current-Max (Abs) (ID) :
300 A
Base Product Number :
IXFB300
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
Rds On Max :
5.5 mΩ
Mounting Style :
Through Hole
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Power Dissipation-Max (Abs) :
1500 W
Number of Terminals :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Power Dissipation :
1.5kW
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Power Dissipation-Max :
1500W Tc
Number of Terminations :
3
Max Power Dissipation :
1.5 kW
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™, PolarP2™
Drain to Source Voltage (Vdss) :
100V
Vgs(th) (Max) @ Id :
5V @ 8mA
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Manufacturer :
IXYS
RoHS :
Compliant
Packaging :
Tube
Reach Compliance Code :
Compliant
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
900A
Transistor Polarity :
N-Channel
Published :
2014
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Pin Count :
3
Vgs (Max) :
±20V
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Max Operating Temperature :
175 °C
Factory Lead Time :
26 Weeks
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Maximum Operating Temperature :
+ 175 C
JESD-30 Code :
R-PSIP-T3
Case Connection :
DRAIN
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
Tradename :
HiPerFET
Min Operating Temperature :
-55 °C
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
0.0055Ohm
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Continuous Drain Current (ID) :
300A
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Datasheets
IXFB300N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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