IXFB300N10P

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Mfr.Part #
IXFB300N10P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 100V 300A PLUS264
Stock
36
In Stock :
36

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Transistor Element Material :
SILICON
Supplier Device Package :
PLUS264™
Pulsed Drain Current-Max (IDM) :
900A
Tradename :
HiPerFET
Gate Charge (Qg) (Max) @ Vgs :
279nC @ 10V
Product Category :
MOSFET
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
JESD-609 Code :
e1
Reach Compliance Code :
Compliant
Surface Mount :
No
Vgs(th) (Max) @ Id :
5V @ 8mA
Pbfree Code :
yes
Terminal Position :
Single
JESD-30 Code :
R-PSIP-T3
ECCN Code :
EAR99
Number of Terminations :
3
Product Status :
Active
Package / Case :
TO-264-3, TO-264AA
Drain to Source Voltage (Vdss) :
100V
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Max Operating Temperature :
175 °C
Operating Temperature :
-55°C~175°C TJ
Transistor Type :
1 N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
26 Weeks
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.0055Ohm
Series :
HiPerFET™, PolarP2™
Input Capacitance :
23 nF
Published :
2014
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
3000 mJ
Transistor Polarity :
N-Channel
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXFB300
Qualification Status :
Not Qualified
Channel Mode :
Enhancement
RoHS :
Compliant
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Min Operating Temperature :
-55 °C
Brand :
IXYS
Continuous Drain Current (ID) :
300A
Drain Current-Max (Abs) (ID) :
300 A
Maximum Operating Temperature :
+ 175 C
Current - Continuous Drain (Id) @ 25°C :
300A Tc
Package Shape :
RECTANGULAR
Rds On Max :
5.5 mΩ
DS Breakdown Voltage-Min :
100 V
Additional Feature :
AVALANCHE RATED
Package :
Tube
Power Dissipation-Max (Abs) :
1500 W
Power Dissipation (Max) :
1500W (Tc)
Power Dissipation :
1.5kW
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Number of Elements :
1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Channels :
1 Channel
Number of Pins :
3
Power Dissipation-Max :
1500W Tc
Max Power Dissipation :
1.5 kW
Gate to Source Voltage (Vgs) :
20V
Product Type :
MOSFET
Mount :
Through Hole
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Pin Count :
3
FET Feature :
--
Mounting Style :
Through Hole
Datasheets
IXFB300N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:3, IXFB300N10P pinout, IXFB300N10P datasheet PDF, IXFB300N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB300N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB300N10P


N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA

IXFB300N10P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFB300N10P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)


IXFB300N10P Applications


There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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