IXFB300N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Pbfree Code :

yes

Packaging :

Tube

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Category :

MOSFET

Power Dissipation-Max (Abs) :

1500 W

Factory Lead Time :

26 Weeks

Package / Case :

TO-264-3, TO-264AA

Continuous Drain Current (ID) :

300A

JESD-30 Code :

R-PSIP-T3

Power Dissipation :

1.5kW

Series :

HiPerFET™, PolarP2™

Product Type :

MOSFET

Maximum Operating Temperature :

+ 175 C

Tradename :

HiPerFET

Number of Elements :

1

Manufacturer :

IXYS

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFB300

Pulsed Drain Current-Max (IDM) :

900A

Rds On Max :

5.5 mΩ

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

0.0055Ohm

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

FET Feature :

--

Vgs (Max) :

±20V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

RoHS :

Compliant

Transistor Polarity :

N-Channel

Package :

Tube

Drain to Source Voltage (Vdss) :

100V

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Brand :

IXYS

Vgs(th) (Max) @ Id :

5V @ 8mA

Case Connection :

DRAIN

Max Power Dissipation :

1.5 kW

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Operating Temperature :

-55°C~175°C TJ

Published :

2014

Power Dissipation-Max :

1500W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance :

23 nF

Avalanche Energy Rating (Eas) :

3000 mJ

Supplier Device Package :

PLUS264™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

300 A

Surface Mount :

No

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100 V

FET Type :

N-Channel

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 50A, 10V

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Channel Mode :

Enhancement

Max Operating Temperature :

175 °C

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Power Dissipation (Max) :

1500W (Tc)

Number of Terminations :

3

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

279nC @ 10V

Min Operating Temperature :

-55 °C