IXFB300N10P
- Mfr.Part #
- IXFB300N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 300A PLUS264
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Drain Current-Max (Abs) (ID) :
- 300 A
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Input Capacitance :
- 23 nF
- Qualification Status :
- Not Qualified
- Terminal Form :
- THROUGH-HOLE
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Tradename :
- HiPerFET
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSIP-T3
- Published :
- 2014
- Rds On Max :
- 5.5 mΩ
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXFB300
- DS Breakdown Voltage-Min :
- 100 V
- FET Feature :
- --
- Number of Pins :
- 3
- Power Dissipation-Max :
- 1500W Tc
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Product Type :
- MOSFET
- Factory Lead Time :
- 26 Weeks
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Power Dissipation-Max (Abs) :
- 1500 W
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 1500W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 900A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- PLUS264™
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Power Dissipation :
- 1.5kW
- Min Operating Temperature :
- -55 °C
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Number of Channels :
- 1 Channel
- Max Operating Temperature :
- 175 °C
- Series :
- HiPerFET™, PolarP2™
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 1.5 kW
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- RoHS :
- Compliant
- Continuous Drain Current (ID) :
- 300A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 175 C
- Brand :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Product Status :
- Active
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Datasheets
- IXFB300N10P

N-Channel Tube 5.5m Ω @ 50A, 10V ±20V 23000pF @ 25V 279nC @ 10V 100V TO-264-3, TO-264AA
IXFB300N10P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 23000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 300A, which represents the maximum continuous current it can conduct.In this device, the drain current is 300 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 900A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFB300N10P Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 300A
based on its rated peak drain current 900A.
a 100V drain to source voltage (Vdss)
IXFB300N10P Applications
There are a lot of IXYS
IXFB300N10P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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