IXFB300N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

Package Shape :

RECTANGULAR

Rds On Max :

5.5 mΩ

FET Feature :

--

Continuous Drain Current (ID) :

300A

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

300 A

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

DS Breakdown Voltage-Min :

100 V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

900A

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Base Product Number :

IXFB300

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 175 C

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 50A, 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Product Status :

Active

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance :

23 nF

Mount :

Through Hole

Power Dissipation-Max (Abs) :

1500 W

Manufacturer :

IXYS

JESD-30 Code :

R-PSIP-T3

Max Operating Temperature :

175 °C

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

1500W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-55 °C

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Brand :

IXYS

JESD-609 Code :

e1

Reach Compliance Code :

Compliant

Tradename :

HiPerFET

Packaging :

Tube

Product Category :

MOSFET

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

PLUS264™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Minimum Operating Temperature :

- 55 C

Surface Mount :

No

Factory Lead Time :

26 Weeks

Power Dissipation :

1.5kW

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

279nC @ 10V

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Terminals :

3

RoHS :

Compliant

Power Dissipation (Max) :

1500W (Tc)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0055Ohm

Package :

Tube

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation :

1.5 kW

Series :

HiPerFET™, PolarP2™

Vgs(th) (Max) @ Id :

5V @ 8mA