IXFB38N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

264

Length :

20.29mm

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Pbfree Code :

yes

FET Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

890 W

Turn-Off Delay Time :

57 ns

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Rds On (Max) @ Id, Vgs :

250m Ω @ 19A, 10V

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

1kV

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

1000 V

Tradename :

HiPerFET

Number of Elements :

1

Terminal Position :

Single

Series :

HiPerFET™

Terminal Form :

THROUGH-HOLE

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Brand :

IXYS

Height :

26.59mm

Supplier Device Package :

PLUS264™

Surface Mount :

No

Turn On Delay Time :

25 ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Product Category :

MOSFET

Pulsed Drain Current-Max (IDM) :

152A

Published :

2008

Number of Channels :

1 Channel

Fall Time (Typ) :

15 ns

Package :

Tube

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 8mA

RoHS :

Details

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Product Type :

MOSFET

Package / Case :

TO-264-3, TO-264AA

Base Product Number :

IXFB38

Pin Count :

3

Number of Terminals :

3

Power Dissipation (Max) :

890W (Tc)

Power Dissipation :

890W

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

JESD-609 Code :

e1

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Mount :

Through Hole

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Resistance :

250mOhm

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Width :

5.31mm

Package Shape :

RECTANGULAR

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

38 A

Continuous Drain Current (ID) :

38A

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

28ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

1000V

Packaging :

Tube

Drain-source On Resistance-Max :

0.25 Ω

Configuration :

Single

Avalanche Energy Rating (Eas) :

5000 mJ

Power Dissipation-Max :

890W Tc