IXFB38N100Q2
- Mfr.Part #
- IXFB38N100Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 38A PLUS264
- Stock
- 97
- In Stock :
- 97
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 890W (Tc)
- Product Status :
- Active
- Power Dissipation-Max :
- 890W Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 890 W
- FET Feature :
- --
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Turn-Off Delay Time :
- 57 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 1000 V
- Resistance :
- 250mOhm
- Maximum Operating Temperature :
- + 150 C
- Tradename :
- HiPerFET
- Pulsed Drain Current-Max (IDM) :
- 152A
- Number of Pins :
- 264
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 1kV
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Published :
- 2008
- Drain-source On Resistance-Max :
- 0.25 Ω
- Rise Time :
- 28ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 1000V
- Lead Free :
- Lead Free
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Length :
- 20.29mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 38A
- Minimum Operating Temperature :
- - 55 C
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 38 A
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- RoHS :
- Details
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- Turn On Delay Time :
- 25 ns
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSIP-T3
- Series :
- HiPerFET™
- Number of Terminations :
- 3
- Supplier Device Package :
- PLUS264™
- Manufacturer :
- IXYS
- Mounting Style :
- Through Hole
- Fall Time (Typ) :
- 15 ns
- Width :
- 5.31mm
- Packaging :
- Tube
- Base Product Number :
- IXFB38
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 19A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 26 Weeks
- Number of Channels :
- 1 Channel
- Height :
- 26.59mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 13500pF @ 25V
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Power Dissipation :
- 890W
- Datasheets
- IXFB38N100Q2

N-Channel Tube 250m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V TO-264-3, TO-264AA
IXFB38N100Q2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 38A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 38 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 57 ns.Peak drain current is 152A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFB38N100Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 152A.
a 1000V drain to source voltage (Vdss)
IXFB38N100Q2 Applications
There are a lot of IXYS
IXFB38N100Q2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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