IXFB38N100Q2

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Mfr.Part #
IXFB38N100Q2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 38A PLUS264
Stock
97
In Stock :
97

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
3
Published :
2008
Rise Time :
28ns
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Drain to Source Breakdown Voltage :
1kV
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations :
3
Transistor Element Material :
SILICON
Power Dissipation :
890W
Product Type :
MOSFET
Series :
HiPerFET™
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
PLUS264™
Number of Pins :
264
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
152A
Mounting Style :
Through Hole
Lead Free :
Lead Free
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
38 A
Power Dissipation-Max (Abs) :
890 W
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Minimum Operating Temperature :
- 55 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
Terminal Form :
THROUGH-HOLE
Width :
5.31mm
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Brand :
IXYS
Product Status :
Active
Package :
Tube
Pin Count :
3
Vgs (Max) :
±30V
Factory Lead Time :
26 Weeks
DS Breakdown Voltage-Min :
1000 V
Drain to Source Voltage (Vdss) :
1000V
Packaging :
Tube
Terminal Position :
Single
Fall Time (Typ) :
15 ns
Turn On Delay Time :
25 ns
JESD-30 Code :
R-PSIP-T3
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
JESD-609 Code :
e1
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
890W (Tc)
Turn-Off Delay Time :
57 ns
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
890W Tc
Rds On (Max) @ Id, Vgs :
250m Ω @ 19A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
20.29mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Resistance :
250mOhm
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
5000 mJ
Mount :
Through Hole
Element Configuration :
Single
Number of Elements :
1
RoHS :
Details
Base Product Number :
IXFB38
Height :
26.59mm
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
13500pF @ 25V
Drain-source On Resistance-Max :
0.25 Ω
Continuous Drain Current (ID) :
38A
Tradename :
HiPerFET
Manufacturer :
IXYS
Package / Case :
TO-264-3, TO-264AA
Surface Mount :
No
Datasheets
IXFB38N100Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB38N100Q2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:264, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, IXFB38N100Q2 pinout, IXFB38N100Q2 datasheet PDF, IXFB38N100Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB38N100Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB38N100Q2


N-Channel Tube 250m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V TO-264-3, TO-264AA

IXFB38N100Q2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 38A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 38 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 57 ns.Peak drain current is 152A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFB38N100Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 152A.
a 1000V drain to source voltage (Vdss)


IXFB38N100Q2 Applications


There are a lot of IXYS
IXFB38N100Q2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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