IXFB38N100Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Avalanche Energy Rating (Eas) :

5000 mJ

Factory Lead Time :

26 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

Manufacturer :

IXYS

Resistance :

250mOhm

DS Breakdown Voltage-Min :

1000 V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Drain to Source Breakdown Voltage :

1kV

Number of Pins :

264

Packaging :

Tube

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

Power Dissipation (Max) :

890W (Tc)

Current - Continuous Drain (Id) @ 25°C :

38A Tc

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

JESD-30 Code :

R-PSIP-T3

Transistor Type :

1 N-Channel

Product Category :

MOSFET

Width :

5.31mm

Pulsed Drain Current-Max (IDM) :

152A

Height :

26.59mm

FET Feature :

--

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

57 ns

Product Type :

MOSFET

Package :

Tube

FET Type :

N-Channel

Product Status :

Active

Element Configuration :

Single

Rise Time :

28ns

Number of Terminations :

3

Supplier Device Package :

PLUS264™

Turn On Delay Time :

25 ns

Number of Channels :

1 Channel

Pin Count :

3

Mount :

Through Hole

Continuous Drain Current (ID) :

38A

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

250m Ω @ 19A, 10V

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.25 Ω

Base Product Number :

IXFB38

Package Shape :

RECTANGULAR

Length :

20.29mm

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HiPerFET™

RoHS :

Details

Transistor Element Material :

SILICON

Tradename :

HiPerFET

JESD-609 Code :

e1

Mounting Style :

Through Hole

Brand :

IXYS

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Transistor Application :

SWITCHING

Configuration :

Single

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

1000V

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

890 W

Power Dissipation :

890W

Power Dissipation-Max :

890W Tc

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-264-3, TO-264AA

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

38 A

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel