IXFB38N100Q2

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Mfr.Part #
IXFB38N100Q2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 38A PLUS264
Stock
97
In Stock :
97

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Mount :
Through Hole
Case Connection :
DRAIN
Published :
2008
Power Dissipation-Max :
890W Tc
Product Type :
MOSFET
Tradename :
HiPerFET
Number of Pins :
264
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
FET Feature :
--
Channel Mode :
Enhancement
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
250m Ω @ 19A, 10V
Height :
26.59mm
Turn-Off Delay Time :
57 ns
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Terminal Form :
THROUGH-HOLE
Width :
5.31mm
Terminal Position :
Single
JESD-30 Code :
R-PSIP-T3
Mounting Type :
Through Hole
Power Dissipation :
890W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
38 A
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Length :
20.29mm
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
1000V
Rise Time :
28ns
Drain to Source Breakdown Voltage :
1kV
Pulsed Drain Current-Max (IDM) :
152A
Lead Free :
Lead Free
Base Product Number :
IXFB38
Mounting Style :
Through Hole
Resistance :
250mOhm
Drain-source On Resistance-Max :
0.25 Ω
Number of Elements :
1
Power Dissipation (Max) :
890W (Tc)
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Series :
HiPerFET™
Element Configuration :
Single
Transistor Type :
1 N-Channel
Product Category :
MOSFET
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Turn On Delay Time :
25 ns
Package :
Tube
Factory Lead Time :
26 Weeks
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation-Max (Abs) :
890 W
Manufacturer :
IXYS
Package Shape :
RECTANGULAR
Number of Terminations :
3
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Pbfree Code :
yes
Configuration :
Single
Fall Time (Typ) :
15 ns
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
13500pF @ 25V
DS Breakdown Voltage-Min :
1000 V
Package / Case :
TO-264-3, TO-264AA
Product Status :
Active
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
38A
Supplier Device Package :
PLUS264™
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
5000 mJ
Transistor Element Material :
SILICON
JESD-609 Code :
e1
Datasheets
IXFB38N100Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB38N100Q2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:264, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFB38N100Q2 pinout, IXFB38N100Q2 datasheet PDF, IXFB38N100Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB38N100Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB38N100Q2


N-Channel Tube 250m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V TO-264-3, TO-264AA

IXFB38N100Q2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 38A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 38 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 57 ns.Peak drain current is 152A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFB38N100Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 152A.
a 1000V drain to source voltage (Vdss)


IXFB38N100Q2 Applications


There are a lot of IXYS
IXFB38N100Q2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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