IXFB38N100Q2

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Mfr.Part #
IXFB38N100Q2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 38A PLUS264
Stock
97
In Stock :
97

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
890W (Tc)
Product Status :
Active
Power Dissipation-Max :
890W Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
890 W
FET Feature :
--
Number of Elements :
1
JESD-609 Code :
e1
Turn-Off Delay Time :
57 ns
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
1000 V
Resistance :
250mOhm
Maximum Operating Temperature :
+ 150 C
Tradename :
HiPerFET
Pulsed Drain Current-Max (IDM) :
152A
Number of Pins :
264
Transistor Type :
1 N-Channel
Drain to Source Breakdown Voltage :
1kV
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
Number of Terminals :
3
Terminal Position :
Single
Published :
2008
Drain-source On Resistance-Max :
0.25 Ω
Rise Time :
28ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
1000V
Lead Free :
Lead Free
Configuration :
Single
Qualification Status :
Not Qualified
Length :
20.29mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
38A
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
38 A
Avalanche Energy Rating (Eas) :
5000 mJ
RoHS :
Details
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Surface Mount :
No
Pin Count :
3
Transistor Polarity :
N-Channel
Turn On Delay Time :
25 ns
Vgs (Max) :
±30V
JESD-30 Code :
R-PSIP-T3
Series :
HiPerFET™
Number of Terminations :
3
Supplier Device Package :
PLUS264™
Manufacturer :
IXYS
Mounting Style :
Through Hole
Fall Time (Typ) :
15 ns
Width :
5.31mm
Packaging :
Tube
Base Product Number :
IXFB38
Polarity/Channel Type :
N-Channel
Package / Case :
TO-264-3, TO-264AA
Element Configuration :
Single
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
250m Ω @ 19A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
26 Weeks
Number of Channels :
1 Channel
Height :
26.59mm
Input Capacitance (Ciss) (Max) @ Vds :
13500pF @ 25V
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Power Dissipation :
890W
Datasheets
IXFB38N100Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB38N100Q2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:264, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Channels:1 Channel, IXFB38N100Q2 pinout, IXFB38N100Q2 datasheet PDF, IXFB38N100Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB38N100Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB38N100Q2


N-Channel Tube 250m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V TO-264-3, TO-264AA

IXFB38N100Q2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 38A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 38 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 57 ns.Peak drain current is 152A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFB38N100Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 152A.
a 1000V drain to source voltage (Vdss)


IXFB38N100Q2 Applications


There are a lot of IXYS
IXFB38N100Q2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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