IXFB38N100Q2
- Mfr.Part #
- IXFB38N100Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 38A PLUS264
- Stock
- 97
- In Stock :
- 97
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 264
- Length :
- 20.29mm
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 890 W
- Turn-Off Delay Time :
- 57 ns
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 19A, 10V
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 1kV
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- DS Breakdown Voltage-Min :
- 1000 V
- Tradename :
- HiPerFET
- Number of Elements :
- 1
- Terminal Position :
- Single
- Series :
- HiPerFET™
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Height :
- 26.59mm
- Supplier Device Package :
- PLUS264™
- Surface Mount :
- No
- Turn On Delay Time :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 152A
- Published :
- 2008
- Number of Channels :
- 1 Channel
- Fall Time (Typ) :
- 15 ns
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- RoHS :
- Details
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Package / Case :
- TO-264-3, TO-264AA
- Base Product Number :
- IXFB38
- Pin Count :
- 3
- Number of Terminals :
- 3
- Power Dissipation (Max) :
- 890W (Tc)
- Power Dissipation :
- 890W
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Mount :
- Through Hole
- Factory Lead Time :
- 26 Weeks
- Case Connection :
- DRAIN
- Resistance :
- 250mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Width :
- 5.31mm
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 38 A
- Continuous Drain Current (ID) :
- 38A
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 13500pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 28ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 1000V
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.25 Ω
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Power Dissipation-Max :
- 890W Tc
- Datasheets
- IXFB38N100Q2

N-Channel Tube 250m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V TO-264-3, TO-264AA
IXFB38N100Q2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 38A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 38 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 57 ns.Peak drain current is 152A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFB38N100Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 152A.
a 1000V drain to source voltage (Vdss)
IXFB38N100Q2 Applications
There are a lot of IXYS
IXFB38N100Q2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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