IXFB44N100P
- Mfr.Part #
- IXFB44N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 44A PLUS264
- Stock
- 22
- In Stock :
- 22
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Type :
- Polar Power MOSFET HiPerFET
- Polarity/Channel Type :
- N-Channel
- Product Category :
- MOSFET
- Brand :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Fall Time (Typ) :
- 56 ns
- Power Dissipation (Max) :
- 1250W (Tc)
- Width :
- 5.31 mm
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 220 mΩ
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 26 Weeks
- Package :
- Tube
- Rise Time :
- 68ns
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- PLUS264™
- Published :
- 2008
- Max Power Dissipation :
- 1.25 kW
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Rds On Max :
- 220 mΩ
- Length :
- 20.29 mm
- Drain to Source Breakdown Voltage :
- 1kV
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 22A, 10V
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 26.59 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 44 A
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Turn-Off Delay Time :
- 90 ns
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Continuous Drain Current Id :
- 44A
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±30V
- Transistor Type :
- 1 N-Channel
- Channel Type :
- N Channel
- Min Operating Temperature :
- -55 °C
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Number of Elements :
- 1
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 110A
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Power Dissipation-Max (Abs) :
- 1250 W
- Qualification :
- -
- Tradename :
- HiPerFET
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSIP-T3
- Base Product Number :
- IXFB44
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 44A
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Input Capacitance :
- 19 nF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 1.25kW
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Series :
- HiPerFET™, PolarP2™
- Gate Charge (Qg) (Max) @ Vgs :
- 305nC @ 10V
- Drain-source On Resistance-Max :
- 0.22Ohm
- DS Breakdown Voltage-Min :
- 1000 V
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-264-3, TO-264AA
- Max Operating Temperature :
- 150 °C
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 1250W Tc
- Lead Free :
- Lead Free
- Number of Terminals :
- 3
- Case Connection :
- DRAIN
- Datasheets
- IXFB44N100P

N-Channel Tube 220m Ω @ 22A, 10V ±30V 19000pF @ 25V 305nC @ 10V 1000V TO-264-3, TO-264AA
IXFB44N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 19000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 44 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 110A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 220 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFB44N100P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 110A.
single MOSFETs transistor is 220 mΩ
a 1000V drain to source voltage (Vdss)
IXFB44N100P Applications
There are a lot of IXYS
IXFB44N100P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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