IXFB44N100P

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Mfr.Part #
IXFB44N100P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 44A PLUS264
Stock
22
In Stock :
22

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Type :
N Channel
Brand :
IXYS
Case Connection :
DRAIN
FET Type :
N-Channel
Input Capacitance :
19 nF
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Number of Elements :
1
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
220m Ω @ 22A, 10V
Drain to Source Resistance :
220 mΩ
Factory Lead Time :
26 Weeks
Pin Count :
3
Height :
26.59 mm
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Configuration :
Single
Drain Current-Max (Abs) (ID) :
44 A
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
Product Category :
MOSFET
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
2000 mJ
Transistor Polarity :
N-Channel
Number of Pins :
3
Package / Case :
TO-264-3, TO-264AA
JESD-609 Code :
e1
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
44A
Min Operating Temperature :
-55 °C
Rds On Max :
220 mΩ
Width :
5.31 mm
Continuous Drain Current Id :
44A
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSIP-T3
Published :
2008
Rise Time :
68ns
Polarity/Channel Type :
N-Channel
Power Dissipation :
1.25kW
Mount :
Through Hole
Channel Mode :
Enhancement
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Power Dissipation-Max :
1250W Tc
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Lead Free :
Lead Free
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
1250 W
Package :
Tube
Number of Terminals :
3
Max Operating Temperature :
150 °C
Fall Time (Typ) :
56 ns
Drain to Source Voltage (Vdss) :
1000V
Pulsed Drain Current-Max (IDM) :
110A
Gate Charge (Qg) (Max) @ Vgs :
305nC @ 10V
Base Product Number :
IXFB44
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
90 ns
Product Status :
Active
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
Type :
Polar Power MOSFET HiPerFET
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Length :
20.29 mm
Manufacturer :
IXYS
RoHS :
Details
Maximum Operating Temperature :
+ 150 C
Series :
HiPerFET™, PolarP2™
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Drain to Source Breakdown Voltage :
1kV
Power Dissipation (Max) :
1250W (Tc)
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Max Power Dissipation :
1.25 kW
Tradename :
HiPerFET
DS Breakdown Voltage-Min :
1000 V
Element Configuration :
Single
Qualification Status :
Not Qualified
Qualification :
-
Drain-source On Resistance-Max :
0.22Ohm
Supplier Device Package :
PLUS264™
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB44N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET HiPerFET, Number of Channels:1 Channel, IXFB44N100P pinout, IXFB44N100P datasheet PDF, IXFB44N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB44N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB44N100P


N-Channel Tube 220m Ω @ 22A, 10V ±30V 19000pF @ 25V 305nC @ 10V 1000V TO-264-3, TO-264AA

IXFB44N100P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 19000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 44 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 110A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 220 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFB44N100P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 110A.
single MOSFETs transistor is 220 mΩ
a 1000V drain to source voltage (Vdss)


IXFB44N100P Applications


There are a lot of IXYS
IXFB44N100P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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