IXFB44N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Rise Time :

68ns

Drain-source On Resistance-Max :

0.22Ohm

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

44A Tc

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

1000 V

Pulsed Drain Current-Max (IDM) :

110A

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Number of Terminations :

3

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Surface Mount :

No

FET Type :

N-Channel

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Pbfree Code :

yes

Input Capacitance :

19 nF

Product Status :

Active

Qualification :

-

Supplier Device Package :

PLUS264™

Factory Lead Time :

26 Weeks

Width :

5.31 mm

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Fall Time (Typ) :

56 ns

Rds On (Max) @ Id, Vgs :

220m Ω @ 22A, 10V

Drain to Source Resistance :

220 mΩ

Max Power Dissipation :

1.25 kW

Transistor Polarity :

N-Channel

Package / Case :

TO-264-3, TO-264AA

Element Configuration :

Single

Vgs (Max) :

±30V

Tradename :

HiPerFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2000 mJ

JESD-30 Code :

R-PSIP-T3

Power Dissipation (Max) :

1250W (Tc)

Type :

Polar Power MOSFET HiPerFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

Drain to Source Breakdown Voltage :

1kV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

26.59 mm

Rds On Max :

220 mΩ

Drain Current-Max (Abs) (ID) :

44 A

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

90 ns

Channel Type :

N Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Length :

20.29 mm

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Case Connection :

DRAIN

FET Feature :

--

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

1250 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Minimum Operating Temperature :

- 55 C

Brand :

IXYS

Configuration :

Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

1250W Tc

Published :

2008

Channel Mode :

Enhancement

RoHS :

Details

Power Dissipation :

1.25kW

Terminal Position :

Single

Packaging :

Tube

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

1000V

Continuous Drain Current Id :

44A

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Number of Pins :

3

Package :

Tube

Base Product Number :

IXFB44

Product Type :

MOSFET

Series :

HiPerFET™, PolarP2™

Number of Elements :

1

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

44A

Number of Terminals :

3