IXFB44N100P

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Mfr.Part #
IXFB44N100P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 1000V 44A PLUS264
Stock
22
In Stock :
22

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Series :
HiPerFET™, PolarP2™
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Rise Time :
68ns
Max Power Dissipation :
1.25 kW
DS Breakdown Voltage-Min :
1000 V
Mounting Style :
Through Hole
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
- 55 C
Published :
2008
Continuous Drain Current Id :
44A
Transistor Element Material :
SILICON
Supplier Device Package :
PLUS264™
Package :
Tube
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Brand :
IXYS
Channel Type :
N Channel
Continuous Drain Current (ID) :
44A
Power Dissipation (Max) :
1250W (Tc)
Drain to Source Breakdown Voltage :
1kV
RoHS :
Details
Qualification :
-
Qualification Status :
Not Qualified
Element Configuration :
Single
Power Dissipation :
1.25kW
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
Number of Pins :
3
Drain to Source Resistance :
220 mΩ
Number of Channels :
1 Channel
Product Category :
MOSFET
Factory Lead Time :
26 Weeks
Pbfree Code :
yes
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXFB44
Input Capacitance :
19 nF
Type :
Polar Power MOSFET HiPerFET
Tradename :
HiPerFET
Height :
26.59 mm
Power Dissipation-Max (Abs) :
1250 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Type :
MOSFET
Manufacturer :
IXYS
Length :
20.29 mm
Mounting Type :
Through Hole
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
44 A
Number of Terminations :
3
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Drain-source On Resistance-Max :
0.22Ohm
Mount :
Through Hole
Fall Time (Typ) :
56 ns
Pulsed Drain Current-Max (IDM) :
110A
Product Status :
Active
Package / Case :
TO-264-3, TO-264AA
Rds On Max :
220 mΩ
Configuration :
Single
Power Dissipation-Max :
1250W Tc
JESD-30 Code :
R-PSIP-T3
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e1
Vgs (Max) :
±30V
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
90 ns
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Lead Free :
Lead Free
Transistor Type :
1 N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
1000V
Rds On (Max) @ Id, Vgs :
220m Ω @ 22A, 10V
Max Operating Temperature :
150 °C
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
305nC @ 10V
Width :
5.31 mm
Surface Mount :
No
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
2000 mJ
Pin Count :
3
Number of Terminals :
3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB44N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Type:Polar Power MOSFET HiPerFET, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFB44N100P pinout, IXFB44N100P datasheet PDF, IXFB44N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB44N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB44N100P


N-Channel Tube 220m Ω @ 22A, 10V ±30V 19000pF @ 25V 305nC @ 10V 1000V TO-264-3, TO-264AA

IXFB44N100P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 19000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 44 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 110A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 220 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFB44N100P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 110A.
single MOSFETs transistor is 220 mΩ
a 1000V drain to source voltage (Vdss)


IXFB44N100P Applications


There are a lot of IXYS
IXFB44N100P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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