IXFB44N100P
- Mfr.Part #
- IXFB44N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 44A PLUS264
- Stock
- 22
- In Stock :
- 22
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Height :
- 26.59 mm
- Brand :
- IXYS
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Published :
- 2008
- Minimum Operating Temperature :
- - 55 C
- Rds On Max :
- 220 mΩ
- Mount :
- Through Hole
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Continuous Drain Current (ID) :
- 44A
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Mounting Type :
- Through Hole
- Length :
- 20.29 mm
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 22A, 10V
- FET Feature :
- --
- Fall Time (Typ) :
- 56 ns
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- PLUS264™
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Position :
- Single
- Input Capacitance :
- 19 nF
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Channel Type :
- N Channel
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 305nC @ 10V
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Qualification :
- -
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 1000 V
- Pulsed Drain Current-Max (IDM) :
- 110A
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Drain to Source Resistance :
- 220 mΩ
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Factory Lead Time :
- 26 Weeks
- Series :
- HiPerFET™, PolarP2™
- Transistor Polarity :
- N-Channel
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Continuous Drain Current Id :
- 44A
- Drain-source On Resistance-Max :
- 0.22Ohm
- Drain Current-Max (Abs) (ID) :
- 44 A
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55 °C
- Turn-Off Delay Time :
- 90 ns
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Base Product Number :
- IXFB44
- Package Shape :
- RECTANGULAR
- Max Power Dissipation :
- 1.25 kW
- Rise Time :
- 68ns
- JESD-609 Code :
- e1
- Drain to Source Breakdown Voltage :
- 1kV
- Power Dissipation :
- 1.25kW
- Max Operating Temperature :
- 150 °C
- JESD-30 Code :
- R-PSIP-T3
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 1250W (Tc)
- Surface Mount :
- No
- Product Type :
- MOSFET
- Width :
- 5.31 mm
- Number of Terminals :
- 3
- Type :
- Polar Power MOSFET HiPerFET
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Power Dissipation-Max :
- 1250W Tc
- Power Dissipation-Max (Abs) :
- 1250 W
- RoHS :
- Details
- Datasheets
- IXFB44N100P

N-Channel Tube 220m Ω @ 22A, 10V ±30V 19000pF @ 25V 305nC @ 10V 1000V TO-264-3, TO-264AA
IXFB44N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 19000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 44 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 110A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 220 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFB44N100P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 110A.
single MOSFETs transistor is 220 mΩ
a 1000V drain to source voltage (Vdss)
IXFB44N100P Applications
There are a lot of IXYS
IXFB44N100P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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