IXFB44N100P
- Mfr.Part #
- IXFB44N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 44A PLUS264
- Stock
- 22
- In Stock :
- 22
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1250W Tc
- Turn-Off Delay Time :
- 90 ns
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Series :
- HiPerFET™, PolarP2™
- Width :
- 5.31 mm
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Configuration :
- Single
- Max Power Dissipation :
- 1.25 kW
- Pulsed Drain Current-Max (IDM) :
- 110A
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 1kV
- Height :
- 26.59 mm
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 305nC @ 10V
- Mount :
- Through Hole
- Element Configuration :
- Single
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 22A, 10V
- Transistor Element Material :
- SILICON
- Channel Type :
- N Channel
- Transistor Polarity :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 44A
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- PLUS264™
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- RoHS :
- Details
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSIP-T3
- Qualification :
- -
- Pbfree Code :
- yes
- Max Operating Temperature :
- 150 °C
- Case Connection :
- DRAIN
- Power Dissipation :
- 1.25kW
- Drain Current-Max (Abs) (ID) :
- 44 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Surface Mount :
- No
- Input Capacitance :
- 19 nF
- Gate to Source Voltage (Vgs) :
- 30V
- DS Breakdown Voltage-Min :
- 1000 V
- Length :
- 20.29 mm
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 1250W (Tc)
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Tradename :
- HiPerFET
- Package / Case :
- TO-264-3, TO-264AA
- Min Operating Temperature :
- -55 °C
- Continuous Drain Current Id :
- 44A
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max (Abs) :
- 1250 W
- Published :
- 2008
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Type :
- Polar Power MOSFET HiPerFET
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 56 ns
- FET Type :
- N-Channel
- Base Product Number :
- IXFB44
- Factory Lead Time :
- 26 Weeks
- Rise Time :
- 68ns
- Package :
- Tube
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On Max :
- 220 mΩ
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Resistance :
- 220 mΩ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.22Ohm
- Transistor Application :
- SWITCHING
- Datasheets
- IXFB44N100P
IXFB44N100P Documents

N-Channel Tube 220m Ω @ 22A, 10V ±30V 19000pF @ 25V 305nC @ 10V 1000V TO-264-3, TO-264AA
IXFB44N100P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 19000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 44 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 110A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 220 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFB44N100P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 110A.
single MOSFETs transistor is 220 mΩ
a 1000V drain to source voltage (Vdss)
IXFB44N100P Applications
There are a lot of IXYS
IXFB44N100P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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