IXFB44N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™, PolarP2™

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Min Operating Temperature :

-55 °C

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Rise Time :

68ns

Max Power Dissipation :

1.25 kW

DS Breakdown Voltage-Min :

1000 V

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Minimum Operating Temperature :

- 55 C

Published :

2008

Continuous Drain Current Id :

44A

Transistor Element Material :

SILICON

Supplier Device Package :

PLUS264™

Package :

Tube

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Brand :

IXYS

Channel Type :

N Channel

Continuous Drain Current (ID) :

44A

Power Dissipation (Max) :

1250W (Tc)

Drain to Source Breakdown Voltage :

1kV

RoHS :

Details

Qualification :

-

Qualification Status :

Not Qualified

Element Configuration :

Single

Power Dissipation :

1.25kW

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Number of Pins :

3

Drain to Source Resistance :

220 mΩ

Number of Channels :

1 Channel

Product Category :

MOSFET

Factory Lead Time :

26 Weeks

Pbfree Code :

yes

Maximum Operating Temperature :

+ 150 C

Base Product Number :

IXFB44

Input Capacitance :

19 nF

Type :

Polar Power MOSFET HiPerFET

Tradename :

HiPerFET

Height :

26.59 mm

Power Dissipation-Max (Abs) :

1250 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

Manufacturer :

IXYS

Length :

20.29 mm

Mounting Type :

Through Hole

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

44 A

Number of Terminations :

3

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Drain-source On Resistance-Max :

0.22Ohm

Mount :

Through Hole

Fall Time (Typ) :

56 ns

Pulsed Drain Current-Max (IDM) :

110A

Product Status :

Active

Package / Case :

TO-264-3, TO-264AA

Rds On Max :

220 mΩ

Configuration :

Single

Power Dissipation-Max :

1250W Tc

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Vgs (Max) :

±30V

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

90 ns

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Transistor Type :

1 N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

1000V

Rds On (Max) @ Id, Vgs :

220m Ω @ 22A, 10V

Max Operating Temperature :

150 °C

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Width :

5.31 mm

Surface Mount :

No

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

2000 mJ

Pin Count :

3

Number of Terminals :

3