IXFB44N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Height :

26.59 mm

Rise Time :

68ns

Mount :

Through Hole

Product Category :

MOSFET

Length :

20.29 mm

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification :

-

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Configuration :

Single

Lead Free :

Lead Free

Factory Lead Time :

26 Weeks

Package :

Tube

Rds On Max :

220 mΩ

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

FET Type :

N-Channel

Min Operating Temperature :

-55 °C

Continuous Drain Current (ID) :

44A

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Supplier Device Package :

PLUS264™

Type :

Polar Power MOSFET HiPerFET

Pbfree Code :

yes

Max Power Dissipation :

1.25 kW

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

1250 W

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Width :

5.31 mm

Rds On (Max) @ Id, Vgs :

220m Ω @ 22A, 10V

Maximum Operating Temperature :

+ 150 C

Package / Case :

TO-264-3, TO-264AA

Power Dissipation :

1.25kW

Drain to Source Breakdown Voltage :

1kV

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

44 A

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Product Status :

Active

DS Breakdown Voltage-Min :

1000 V

Pin Count :

3

Channel Type :

N Channel

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Brand :

IXYS

Power Dissipation-Max :

1250W Tc

Turn-Off Delay Time :

90 ns

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e1

Fall Time (Typ) :

56 ns

Avalanche Energy Rating (Eas) :

2000 mJ

Drain-source On Resistance-Max :

0.22Ohm

Number of Terminations :

3

Surface Mount :

No

Mounting Style :

Through Hole

Tradename :

HiPerFET

Series :

HiPerFET™, PolarP2™

Product Type :

MOSFET

Input Capacitance :

19 nF

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

1250W (Tc)

Terminal Position :

Single

Drain to Source Resistance :

220 mΩ

Max Operating Temperature :

150 °C

Pulsed Drain Current-Max (IDM) :

110A

FET Feature :

--

Drain to Source Voltage (Vdss) :

1000V

Base Product Number :

IXFB44

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

Number of Channels :

1 Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Channel Mode :

Enhancement

Published :

2008

Continuous Drain Current Id :

44A

Element Configuration :

Single

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Vgs(th) (Max) @ Id :

6.5V @ 1mA