IXFB132N50P3

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Mfr.Part #
IXFB132N50P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 132A PLUS264
Stock
35,702
In Stock :
35,702

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Minimum Operating Temperature :
-55 °C
Package :
Tube
Length :
20.29mm
Mounting Style :
Through Hole
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
44 ns
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Power Dissipation-Max (Abs) :
1890 W
Vgs (Max) :
±30V
Packaging :
Tube
Lead Free :
Lead Free
Product Status :
Active
Number of Terminals :
3
Element Configuration :
Single
JESD-30 Code :
R-PSIP-T3
Number of Terminations :
3
Package Type :
PLUS264
Product Category :
MOSFET
Continuous Drain Current (ID) :
132A
Series :
HiPerFET™, Polar3™
Pulsed Drain Current-Max (IDM) :
330A
Number of Elements per Chip :
1
Brand :
IXYS
FET Type :
N-Channel
Qualification :
-
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
39m Ω @ 66A, 10V
Continuous Drain Current Id :
132A
Channel Type :
N Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
MSL :
-
Additional Feature :
AVALANCHE RATED
Maximum Operating Temperature :
+150 °C
Manufacturer :
IXYS
Surface Mount :
No
Width :
5.31mm
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Fall Time (Typ) :
8 ns
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Number of Channels :
1 Channel
RoHS :
Details
Power Dissipation :
1.89kW
Base Product Number :
IXFB132
Power Dissipation (Max) :
1890W (Tc)
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Power Dissipation-Max :
1890W Tc
Factory Lead Time :
26 Weeks
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
500V
Rise Time :
9ns
ECCN Code :
EAR99
Transistor Type :
1 N-Channel
Drain Current-Max (Abs) (ID) :
132 A
Mount :
Through Hole
DS Breakdown Voltage-Min :
500 V
Product Type :
MOSFET
Height :
26.59mm
Drain to Source Breakdown Voltage :
500V
Pin Count :
3
Case Connection :
DRAIN
Reach Compliance Code :
Unknown
Polarity/Channel Type :
N-Channel
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
72 ns
Number of Pins :
264
Number of Elements :
1
Tradename :
HiPerFET
Drain-source On Resistance-Max :
0.039Ohm
Gate to Source Voltage (Vgs) :
30V
Published :
2011
Avalanche Energy Rating (Eas) :
3000 mJ
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 8mA
Supplier Device Package :
PLUS264™
Transistor Polarity :
N-Channel
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
132A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
5V
Package / Case :
TO-264-3, TO-264AA
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:264, Package / Case:TO-264-3, TO-264AA, IXFB132N50P3 pinout, IXFB132N50P3 datasheet PDF, IXFB132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB132N50P3


N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA

IXFB132N50P3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 18600pF @ 25V.This device has a continuous drain current (ID) of [132A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 132 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.A maximum pulsed drain current of 330A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 44 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 132A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFB132N50P3 Applications


There are a lot of IXYS
IXFB132N50P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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