IXFB132N50P3

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Mfr.Part #
IXFB132N50P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 132A PLUS264
Stock
35,702
In Stock :
35,702

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements per Chip :
1
Length :
20.29mm
Published :
2011
Width :
5.31mm
Reach Compliance Code :
Unknown
Configuration :
Single
Brand :
IXYS
Series :
HiPerFET™, Polar3™
Package :
Tube
Power Dissipation-Max (Abs) :
1890 W
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Fall Time (Typ) :
8 ns
Packaging :
Tube
Drain to Source Voltage (Vdss) :
500V
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Terminal Position :
Single
DS Breakdown Voltage-Min :
500 V
FET Type :
N-Channel
Qualification :
-
MSL :
-
REACH SVHC :
No SVHC
Package Type :
PLUS264
Number of Terminals :
3
Number of Channels :
1 Channel
Turn On Delay Time :
44 ns
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Continuous Drain Current (ID) :
132A
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
39m Ω @ 66A, 10V
Drain to Source Breakdown Voltage :
500V
Surface Mount :
No
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
330A
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXFB132
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
132 A
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Power Dissipation :
1.89kW
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
30V
Height :
26.59mm
Drain-source On Resistance-Max :
0.039Ohm
Rise Time :
9ns
Avalanche Energy Rating (Eas) :
3000 mJ
Power Dissipation-Max :
1890W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Shape :
RECTANGULAR
Supplier Device Package :
PLUS264™
RoHS :
Details
Transistor Polarity :
N-Channel
Tradename :
HiPerFET
Maximum Operating Temperature :
+150 °C
Mount :
Through Hole
Power Dissipation (Max) :
1890W (Tc)
Package / Case :
TO-264-3, TO-264AA
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
264
Factory Lead Time :
26 Weeks
Continuous Drain Current Id :
132A
Number of Terminations :
3
JESD-30 Code :
R-PSIP-T3
Minimum Operating Temperature :
-55 °C
Lead Free :
Lead Free
FET Feature :
--
Mounting Style :
Through Hole
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Element Configuration :
Single
Product Category :
MOSFET
Channel Type :
N Channel
Threshold Voltage :
5V
Number of Elements :
1
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
132A Tc
Turn-Off Delay Time :
72 ns
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
5V @ 8mA
Operating Temperature :
-55°C~150°C TJ
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:264, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFB132N50P3 pinout, IXFB132N50P3 datasheet PDF, IXFB132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB132N50P3


N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA

IXFB132N50P3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 18600pF @ 25V.This device has a continuous drain current (ID) of [132A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 132 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.A maximum pulsed drain current of 330A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 44 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 132A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFB132N50P3 Applications


There are a lot of IXYS
IXFB132N50P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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