IXFB132N50P3
- Mfr.Part #
- IXFB132N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 132A PLUS264
- Stock
- 35,702
- In Stock :
- 35,702
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements per Chip :
- 1
- Length :
- 20.29mm
- Published :
- 2011
- Width :
- 5.31mm
- Reach Compliance Code :
- Unknown
- Configuration :
- Single
- Brand :
- IXYS
- Series :
- HiPerFET™, Polar3™
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 1890 W
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 8 ns
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 500V
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- FET Type :
- N-Channel
- Qualification :
- -
- MSL :
- -
- REACH SVHC :
- No SVHC
- Package Type :
- PLUS264
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- Turn On Delay Time :
- 44 ns
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 132A
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 66A, 10V
- Drain to Source Breakdown Voltage :
- 500V
- Surface Mount :
- No
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 330A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXFB132
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 132 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 18600pF @ 25V
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 1.89kW
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 26.59mm
- Drain-source On Resistance-Max :
- 0.039Ohm
- Rise Time :
- 9ns
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Power Dissipation-Max :
- 1890W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- PLUS264™
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Tradename :
- HiPerFET
- Maximum Operating Temperature :
- +150 °C
- Mount :
- Through Hole
- Power Dissipation (Max) :
- 1890W (Tc)
- Package / Case :
- TO-264-3, TO-264AA
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 264
- Factory Lead Time :
- 26 Weeks
- Continuous Drain Current Id :
- 132A
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Minimum Operating Temperature :
- -55 °C
- Lead Free :
- Lead Free
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Channel Type :
- N Channel
- Threshold Voltage :
- 5V
- Number of Elements :
- 1
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 132A Tc
- Turn-Off Delay Time :
- 72 ns
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXFB132N50P3
IXFB132N50P3 Documents

N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA
IXFB132N50P3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 18600pF @ 25V.This device has a continuous drain current (ID) of [132A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 132 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.A maximum pulsed drain current of 330A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 44 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFB132N50P3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 132A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXFB132N50P3 Applications
There are a lot of IXYS
IXFB132N50P3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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