IXFB132N50P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

--

Fall Time (Typ) :

8 ns

Turn On Delay Time :

44 ns

Current - Continuous Drain (Id) @ 25°C :

132A Tc

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.039Ohm

Number of Pins :

264

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Terminal Position :

Single

Power Dissipation-Max :

1890W Tc

Channel Type :

N Channel

Minimum Operating Temperature :

-55 °C

Qualification :

-

Transistor Application :

SWITCHING

Length :

20.29mm

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Published :

2011

MSL :

-

Threshold Voltage :

5V

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

18600pF @ 25V

Channel Mode :

Enhancement

Tradename :

HiPerFET

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

1890 W

Package / Case :

TO-264-3, TO-264AA

Mount :

Through Hole

Package :

Tube

Drain Current-Max (Abs) (ID) :

132 A

Rise Time :

9ns

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Number of Elements per Chip :

1

Factory Lead Time :

26 Weeks

DS Breakdown Voltage-Min :

500 V

Drain to Source Breakdown Voltage :

500V

Configuration :

Single

Rds On (Max) @ Id, Vgs :

39m Ω @ 66A, 10V

Number of Terminals :

3

Package Type :

PLUS264

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current Id :

132A

Operating Mode :

ENHANCEMENT MODE

Width :

5.31mm

Height :

26.59mm

Base Product Number :

IXFB132

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

330A

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

PLUS264™

Brand :

IXYS

Mounting Style :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Maximum Operating Temperature :

+150 °C

Transistor Element Material :

SILICON

Pin Count :

3

Mounting Type :

Through Hole

Power Dissipation (Max) :

1890W (Tc)

Continuous Drain Current (ID) :

132A

Element Configuration :

Single

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

3000 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Series :

HiPerFET™, Polar3™

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

72 ns

Power Dissipation :

1.89kW

RoHS :

Details

Reach Compliance Code :

Unknown

Number of Elements :

1

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

500V

Packaging :

Tube

Number of Terminations :

3

REACH SVHC :

No SVHC