IXFB132N50P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements per Chip :

1

Drain-source On Resistance-Max :

0.039Ohm

Number of Terminals :

3

ECCN Code :

EAR99

Length :

20.29mm

Transistor Polarity :

N-Channel

Mount :

Through Hole

Brand :

IXYS

Power Dissipation (Max) :

1890W (Tc)

Terminal Position :

Single

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Turn On Delay Time :

44 ns

Rds On (Max) @ Id, Vgs :

39m Ω @ 66A, 10V

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

132A

Product Type :

MOSFET

Width :

5.31mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Turn-Off Delay Time :

72 ns

Package Shape :

RECTANGULAR

Channel Type :

N Channel

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

1890 W

FET Type :

N-Channel

Threshold Voltage :

5V

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Configuration :

Single

Maximum Operating Temperature :

+150 °C

Rise Time :

9ns

DS Breakdown Voltage-Min :

500 V

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current Id :

132A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Mounting Style :

Through Hole

Series :

HiPerFET™, Polar3™

Base Product Number :

IXFB132

Packaging :

Tube

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

132 A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

500V

Package / Case :

TO-264-3, TO-264AA

Power Dissipation :

1.89kW

MSL :

-

Vgs(th) (Max) @ Id :

5V @ 8mA

Drain to Source Breakdown Voltage :

500V

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Number of Elements :

1

Package Type :

PLUS264

Terminal Form :

THROUGH-HOLE

Fall Time (Typ) :

8 ns

Product Category :

MOSFET

Published :

2011

JESD-30 Code :

R-PSIP-T3

Height :

26.59mm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Pulsed Drain Current-Max (IDM) :

330A

Package :

Tube

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Unknown

Element Configuration :

Single

Product Status :

Active

Power Dissipation-Max :

1890W Tc

Number of Pins :

264

Lead Free :

Lead Free

Vgs (Max) :

±30V

Qualification :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

3000 mJ

Factory Lead Time :

26 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

18600pF @ 25V

Number of Channels :

1 Channel

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

132A Tc

Supplier Device Package :

PLUS264™