IXFB132N50P3

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Mfr.Part #
IXFB132N50P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 132A PLUS264
Stock
35,702
In Stock :
35,702

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Mounting Style :
Through Hole
REACH SVHC :
No SVHC
JESD-30 Code :
R-PSIP-T3
Drain Current-Max (Abs) (ID) :
132 A
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Factory Lead Time :
26 Weeks
DS Breakdown Voltage-Min :
500 V
Number of Elements per Chip :
1
Threshold Voltage :
5V
Product Type :
MOSFET
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
5V @ 8mA
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
1890W (Tc)
Package Type :
PLUS264
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
1890W Tc
Continuous Drain Current Id :
132A
Number of Terminations :
3
Terminal Position :
Single
Case Connection :
DRAIN
Fall Time (Typ) :
8 ns
Drain to Source Breakdown Voltage :
500V
Additional Feature :
AVALANCHE RATED
Series :
HiPerFET™, Polar3™
Rise Time :
9ns
Pin Count :
3
Power Dissipation :
1.89kW
Rds On (Max) @ Id, Vgs :
39m Ω @ 66A, 10V
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
30V
FET Feature :
--
Supplier Device Package :
PLUS264™
Length :
20.29mm
Number of Terminals :
3
Qualification :
-
Continuous Drain Current (ID) :
132A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
Power Dissipation-Max (Abs) :
1890 W
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Package :
Tube
RoHS :
Details
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
3000 mJ
Drain-source On Resistance-Max :
0.039Ohm
Drain to Source Voltage (Vdss) :
500V
Turn On Delay Time :
44 ns
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
132A Tc
Maximum Operating Temperature :
+150 °C
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Category :
MOSFET
Mounting Type :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-264-3, TO-264AA
Product Status :
Active
Transistor Element Material :
SILICON
Base Product Number :
IXFB132
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
72 ns
Height :
26.59mm
Vgs (Max) :
±30V
Lead Free :
Lead Free
MSL :
-
Pulsed Drain Current-Max (IDM) :
330A
Qualification Status :
Not Qualified
Width :
5.31mm
Manufacturer :
IXYS
Number of Pins :
264
Mount :
Through Hole
Configuration :
Single
Surface Mount :
No
Tradename :
HiPerFET
Channel Type :
N Channel
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Minimum Operating Temperature :
-55 °C
Published :
2011
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:264, IXFB132N50P3 pinout, IXFB132N50P3 datasheet PDF, IXFB132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB132N50P3


N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA

IXFB132N50P3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 18600pF @ 25V.This device has a continuous drain current (ID) of [132A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 132 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.A maximum pulsed drain current of 330A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 44 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 132A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFB132N50P3 Applications


There are a lot of IXYS
IXFB132N50P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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