IXFB132N50P3

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Mfr.Part #
IXFB132N50P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 132A PLUS264
Stock
35,702
In Stock :
35,702

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
330A
Continuous Drain Current Id :
132A
Height :
26.59mm
Brand :
IXYS
Mounting Style :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Qualification :
-
Element Configuration :
Single
Product Status :
Active
Turn-Off Delay Time :
72 ns
Drain Current-Max (Abs) (ID) :
132 A
Terminal Position :
Single
Package Type :
PLUS264
Manufacturer :
IXYS
DS Breakdown Voltage-Min :
500 V
Rise Time :
9ns
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Package / Case :
TO-264-3, TO-264AA
Power Dissipation (Max) :
1890W (Tc)
Qualification Status :
Not Qualified
Threshold Voltage :
5V
Current - Continuous Drain (Id) @ 25°C :
132A Tc
Tradename :
HiPerFET
Surface Mount :
No
Pin Count :
3
Drain to Source Breakdown Voltage :
500V
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
39m Ω @ 66A, 10V
Case Connection :
DRAIN
Configuration :
Single
Transistor Polarity :
N-Channel
FET Feature :
--
Published :
2011
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
5V @ 8mA
Turn On Delay Time :
44 ns
Number of Terminations :
3
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
30V
Width :
5.31mm
Drain-source On Resistance-Max :
0.039Ohm
Power Dissipation-Max (Abs) :
1890 W
Length :
20.29mm
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Number of Elements :
1
Reach Compliance Code :
Unknown
Product Category :
MOSFET
Packaging :
Tube
Power Dissipation :
1.89kW
Package Shape :
RECTANGULAR
Maximum Operating Temperature :
+150 °C
Power Dissipation-Max :
1890W Tc
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFB132
FET Type :
N-Channel
Supplier Device Package :
PLUS264™
MSL :
-
Lead Free :
Lead Free
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
3000 mJ
JESD-30 Code :
R-PSIP-T3
Channel Type :
N Channel
Number of Elements per Chip :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™, Polar3™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
-55 °C
Factory Lead Time :
26 Weeks
Mounting Type :
Through Hole
Number of Pins :
264
Continuous Drain Current (ID) :
132A
RoHS :
Details
Fall Time (Typ) :
8 ns
Number of Channels :
1 Channel
Package :
Tube
Terminal Form :
THROUGH-HOLE
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:264, Number of Channels:1 Channel, IXFB132N50P3 pinout, IXFB132N50P3 datasheet PDF, IXFB132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB132N50P3


N-Channel Tube 39m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V TO-264-3, TO-264AA

IXFB132N50P3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 18600pF @ 25V.This device has a continuous drain current (ID) of [132A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 132 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 72 ns.A maximum pulsed drain current of 330A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 44 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 132A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFB132N50P3 Applications


There are a lot of IXYS
IXFB132N50P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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