IXFB100N50Q3
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- Mfr.Part #
- IXFB100N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 100A PLUS264
- Stock
- 32,037
- In Stock ：
- 32,037
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Resistance :
- 49mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Base Product Number :
- IXFB100
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Elements :
- 1
- Product Status :
- Active
- Supplier Device Package :
- PLUS264™
- Turn On Delay Time :
- 40 ns
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- Height :
- 26.59mm
- Series :
- HiPerFET™
- Mount :
- Through Hole
- Number of Pins :
- 264
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 50A, 10V
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-264-3, TO-264AA
- JESD-30 Code :
- R-PSIP-T3
- Pin Count :
- 3
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 13800pF @ 25V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Package :
- Tube
- Product Category :
- MOSFET
- Length :
- 20.29mm
- Tradename :
- HiPerFET
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Configuration :
- Single
- Power Dissipation :
- 1.56kW
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Width :
- 5.31mm
- Transistor Type :
- 1 N-Channel
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Published :
- 2011
- Turn-Off Delay Time :
- 50 ns
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Power Dissipation-Max :
- 1560W Tc
- Pulsed Drain Current-Max (IDM) :
- 300A
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 100A
- Rise Time :
- 250ns
- Power Dissipation (Max) :
- 1560W (Tc)
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- IXFB100N50Q3
N-Channel Tube 49m Ω @ 50A, 10V ±30V 13800pF @ 25V 255nC @ 10V 500V TO-264-3, TO-264AA
IXFB100N50Q3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 300A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFB100N50Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 300A.
a 500V drain to source voltage (Vdss)
IXFB100N50Q3 Applications
There are a lot of IXYS
IXFB100N50Q3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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