IXFB100N50Q3
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- Mfr.Part #
- IXFB100N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 100A PLUS264
- Stock
- 32,037
- In Stock ：
- 32,037
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Channel Mode :
- Enhancement
- Rise Time :
- 250ns
- Drain to Source Voltage (Vdss) :
- 500V
- Tradename :
- HiPerFET
- Power Dissipation (Max) :
- 1560W (Tc)
- Reach Compliance Code :
- Unknown
- Series :
- HiPerFET™
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Drain to Source Breakdown Voltage :
- 500V
- Supplier Device Package :
- PLUS264™
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Power Dissipation :
- 1.56kW
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 49mOhm
- Power Dissipation-Max :
- 1560W Tc
- Factory Lead Time :
- 20 Weeks
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 264
- Continuous Drain Current (ID) :
- 100A
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 13800pF @ 25V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS
- Package :
- Tube
- Height :
- 26.59mm
- Turn On Delay Time :
- 40 ns
- Turn-Off Delay Time :
- 50 ns
- RoHS :
- Details
- Number of Terminations :
- 3
- Length :
- 20.29mm
- Base Product Number :
- IXFB100
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Number of Elements :
- 1
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Product Category :
- MOSFET
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Width :
- 5.31mm
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 300A
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Package / Case :
- TO-264-3, TO-264AA
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 50A, 10V
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-PSIP-T3
- Published :
- 2011
- Datasheets
- IXFB100N50Q3
N-Channel Tube 49m Ω @ 50A, 10V ±30V 13800pF @ 25V 255nC @ 10V 500V TO-264-3, TO-264AA
IXFB100N50Q3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 300A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFB100N50Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 300A.
a 500V drain to source voltage (Vdss)
IXFB100N50Q3 Applications
There are a lot of IXYS
IXFB100N50Q3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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