IXFB100N50Q3
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- Mfr.Part #
- IXFB100N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 100A PLUS264
- Stock
- 32,037
- In Stock ：
- 32,037
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Published :
- 2011
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 300A
- Power Dissipation-Max :
- 1560W Tc
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Width :
- 5.31mm
- Reach Compliance Code :
- Unknown
- Channel Mode :
- Enhancement
- Number of Pins :
- 264
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 100A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- PLUS264™
- Minimum Operating Temperature :
- - 55 C
- Height :
- 26.59mm
- Tradename :
- HiPerFET
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Resistance :
- 49mOhm
- Turn-Off Delay Time :
- 50 ns
- JESD-30 Code :
- R-PSIP-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 40 ns
- Vgs (Max) :
- ±30V
- Base Product Number :
- IXFB100
- FET Feature :
- --
- Rise Time :
- 250ns
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- Package / Case :
- TO-264-3, TO-264AA
- Product Category :
- MOSFET
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 50A, 10V
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Length :
- 20.29mm
- Package :
- Tube
- Series :
- HiPerFET™
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 1560W (Tc)
- RoHS :
- Details
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.56kW
- Factory Lead Time :
- 20 Weeks
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 13800pF @ 25V
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Datasheets
- IXFB100N50Q3
N-Channel Tube 49m Ω @ 50A, 10V ±30V 13800pF @ 25V 255nC @ 10V 500V TO-264-3, TO-264AA
IXFB100N50Q3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 300A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFB100N50Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 300A.
a 500V drain to source voltage (Vdss)
IXFB100N50Q3 Applications
There are a lot of IXYS
IXFB100N50Q3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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