IXFB100N50Q3

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Mfr.Part #
IXFB100N50Q3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 100A PLUS264
Stock
32,037
In Stock :
32,037

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Resistance :
49mOhm
Rds On (Max) @ Id, Vgs :
49m Ω @ 50A, 10V
Power Dissipation :
1.56kW
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
13800pF @ 25V
Product Category :
MOSFET
Manufacturer :
IXYS
Mount :
Through Hole
Avalanche Energy Rating (Eas) :
5000 mJ
Transistor Element Material :
SILICON
Product Status :
Active
Factory Lead Time :
20 Weeks
Radiation Hardening :
No
Width :
5.31mm
Number of Pins :
264
FET Type :
N-Channel
Lead Free :
Lead Free
Continuous Drain Current (ID) :
100A
RoHS :
Details
Transistor Application :
SWITCHING
Power Dissipation (Max) :
1560W (Tc)
Height :
26.59mm
Case Connection :
DRAIN
Vgs (Max) :
±30V
Drain to Source Breakdown Voltage :
500V
Channel Mode :
Enhancement
Element Configuration :
Single
Reach Compliance Code :
Unknown
Number of Elements :
1
Rise Time :
250ns
FET Feature :
--
Published :
2011
ECCN Code :
EAR99
Tradename :
HiPerFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
Pin Count :
3
Base Product Number :
IXFB100
Brand :
IXYS
Pulsed Drain Current-Max (IDM) :
300A
Turn-Off Delay Time :
50 ns
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
255nC @ 10V
Drain to Source Voltage (Vdss) :
500V
Series :
HiPerFET™
Maximum Operating Temperature :
+ 150 C
Length :
20.29mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Power Dissipation-Max :
1560W Tc
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Turn On Delay Time :
40 ns
Vgs(th) (Max) @ Id :
6.5V @ 8mA
JESD-30 Code :
R-PSIP-T3
Package / Case :
TO-264-3, TO-264AA
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Number of Channels :
1 Channel
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
PLUS264™
Transistor Type :
1 N-Channel
Datasheets
IXFB100N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB100N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:264, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFB100N50Q3 pinout, IXFB100N50Q3 datasheet PDF, IXFB100N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB100N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB100N50Q3


N-Channel Tube 49m Ω @ 50A, 10V ±30V 13800pF @ 25V 255nC @ 10V 500V TO-264-3, TO-264AA

IXFB100N50Q3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 300A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFB100N50Q3 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 300A.
a 500V drain to source voltage (Vdss)


IXFB100N50Q3 Applications


There are a lot of IXYS
IXFB100N50Q3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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