IXFB210N20P
- Mfr.Part #
- IXFB210N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 210A PLUS264
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Compliant
- JESD-609 Code :
- e1
- Package / Case :
- TO-264-3, TO-264AA
- Drain to Source Breakdown Voltage :
- 200V
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 210 A
- Published :
- 2010
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Pin Count :
- 3
- Number of Pins :
- 264
- Number of Elements :
- 1
- Terminal Position :
- Single
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- FET Feature :
- --
- Power Dissipation :
- 1.5kW
- Vgs (Max) :
- ±20V
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 600A
- JESD-30 Code :
- R-PSIP-T3
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXFB210
- Power Dissipation-Max :
- 1500W Tc
- Series :
- HiPerFET™, PolarP2™
- Drain-source On Resistance-Max :
- 0.0105Ohm
- Supplier Device Package :
- PLUS264™
- Input Capacitance (Ciss) (Max) @ Vds :
- 18600pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Factory Lead Time :
- 26 Weeks
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 210A
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 200V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 255nC @ 10V
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- Maximum Operating Temperature :
- + 175 C
- Brand :
- IXYS
- Power Dissipation-Max (Abs) :
- 1500 W
- Tradename :
- HiPerFET
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 1500W (Tc)
- Package :
- Tube
- Surface Mount :
- No
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 105A, 10V
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 200 V
- Product Status :
- Active
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXFB210N20P

N-Channel Tube 10.5m Ω @ 105A, 10V ±20V 18600pF @ 25V 255nC @ 10V 200V TO-264-3, TO-264AA
IXFB210N20P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 18600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 210A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 210 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFB210N20P Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 210A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 600A.
a 200V drain to source voltage (Vdss)
IXFB210N20P Applications
There are a lot of IXYS
IXFB210N20P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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