IXFB210N20P

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Mfr.Part #
IXFB210N20P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 210A PLUS264
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
JESD-609 Code :
e1
Package / Case :
TO-264-3, TO-264AA
Drain to Source Breakdown Voltage :
200V
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) :
210 A
Published :
2010
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Pin Count :
3
Number of Pins :
264
Number of Elements :
1
Terminal Position :
Single
Element Configuration :
Single
Case Connection :
DRAIN
FET Feature :
--
Power Dissipation :
1.5kW
Vgs (Max) :
±20V
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
600A
JESD-30 Code :
R-PSIP-T3
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Base Product Number :
IXFB210
Power Dissipation-Max :
1500W Tc
Series :
HiPerFET™, PolarP2™
Drain-source On Resistance-Max :
0.0105Ohm
Supplier Device Package :
PLUS264™
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
4000 mJ
Number of Channels :
1 Channel
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Factory Lead Time :
26 Weeks
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
210A
Mounting Style :
Through Hole
Drain to Source Voltage (Vdss) :
200V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
255nC @ 10V
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
210A Tc
Maximum Operating Temperature :
+ 175 C
Brand :
IXYS
Power Dissipation-Max (Abs) :
1500 W
Tradename :
HiPerFET
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
RoHS :
Details
Mount :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Power Dissipation (Max) :
1500W (Tc)
Package :
Tube
Surface Mount :
No
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 105A, 10V
Polarity/Channel Type :
N-Channel
Number of Terminals :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
200 V
Product Status :
Active
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXFB210N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB210N20P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Pins:264, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, IXFB210N20P pinout, IXFB210N20P datasheet PDF, IXFB210N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB210N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB210N20P


N-Channel Tube 10.5m Ω @ 105A, 10V ±20V 18600pF @ 25V 255nC @ 10V 200V TO-264-3, TO-264AA

IXFB210N20P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 18600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 210A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 210 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFB210N20P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 210A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 600A.
a 200V drain to source voltage (Vdss)


IXFB210N20P Applications


There are a lot of IXYS
IXFB210N20P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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