IXFB210N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Continuous Drain Current (ID) :

210A

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

4000 mJ

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

PLUS264™

Package Shape :

RECTANGULAR

Series :

HiPerFET™, PolarP2™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1500W Tc

JESD-609 Code :

e1

Tradename :

HiPerFET

Maximum Operating Temperature :

+ 175 C

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

210A Tc

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Number of Terminations :

3

Surface Mount :

No

Terminal Position :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tube

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Number of Terminals :

3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Number of Pins :

264

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFB210

Package / Case :

TO-264-3, TO-264AA

Product Type :

MOSFET

Power Dissipation :

1.5kW

Drain Current-Max (Abs) (ID) :

210 A

JESD-30 Code :

R-PSIP-T3

Brand :

IXYS

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 105A, 10V

Vgs (Max) :

±20V

Pin Count :

3

Vgs(th) (Max) @ Id :

4.5V @ 8mA

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0105Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

600A

Drain to Source Voltage (Vdss) :

200V

Mount :

Through Hole

Package :

Tube

Product Category :

MOSFET

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

18600pF @ 25V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

200V

Factory Lead Time :

26 Weeks

Manufacturer :

IXYS

Number of Channels :

1 Channel

Published :

2010

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

1500 W

RoHS :

Details

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

200 V

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Power Dissipation (Max) :

1500W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V