IXFB210N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

210A

Configuration :

Single

Factory Lead Time :

26 Weeks

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max (Abs) :

1500 W

Current - Continuous Drain (Id) @ 25°C :

210A Tc

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Power Dissipation (Max) :

1500W (Tc)

Number of Pins :

264

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

ECCN Code :

EAR99

Manufacturer :

IXYS

Brand :

IXYS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Base Product Number :

IXFB210

Product Category :

MOSFET

Surface Mount :

No

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

210 A

Power Dissipation :

1.5kW

Mounting Type :

Through Hole

Package :

Tube

Product Status :

Active

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

18600pF @ 25V

Number of Terminals :

3

Published :

2010

JESD-609 Code :

e1

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Series :

HiPerFET™, PolarP2™

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0105Ohm

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

Supplier Device Package :

PLUS264™

Pulsed Drain Current-Max (IDM) :

600A

RoHS :

Details

Product Type :

MOSFET

Power Dissipation-Max :

1500W Tc

Element Configuration :

Single

Drain to Source Breakdown Voltage :

200V

Maximum Operating Temperature :

+ 175 C

DS Breakdown Voltage-Min :

200 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 105A, 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Package / Case :

TO-264-3, TO-264AA

Packaging :

Tube

Tradename :

HiPerFET

Operating Temperature :

-55°C~175°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

4000 mJ