IXFB30N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.35 Ω

Rds On (Max) @ Id, Vgs :

350m Ω @ 500mA, 10V

Mounting Style :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Product Type :

MOSFET

Max Power Dissipation :

1.25 kW

Length :

20.29 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

FET Feature :

--

Manufacturer :

IXYS

Factory Lead Time :

26 Weeks

Brand :

IXYS

Published :

2010

Type :

Polar HiPerFET Power MOSFET

JESD-30 Code :

R-PSIP-T3

Width :

5.31 mm

Supplier Device Package :

PLUS264™

Drain to Source Resistance :

350 mΩ

Terminal Position :

Single

Pbfree Code :

yes

Maximum Operating Temperature :

+ 150 C

Height :

26.59 mm

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Max Operating Temperature :

150 °C

Mounting Type :

Through Hole

Power Dissipation :

1.25kW

Product Status :

Active

Surface Mount :

No

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

1.2kV

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Series :

HiPerFET™, PolarP2™

Number of Terminals :

3

Power Dissipation-Max (Abs) :

1250 W

Base Product Number :

IXFB30

RoHS :

Compliant

JESD-609 Code :

e1

Minimum Operating Temperature :

- 55 C

Rise Time :

60ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

30A

Number of Terminations :

3

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Configuration :

Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Turn-Off Delay Time :

95 ns

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

75A

Fall Time (Typ) :

56 ns

Avalanche Energy Rating (Eas) :

2000 mJ

Package / Case :

TO-264-3, TO-264AA

Drain to Source Voltage (Vdss) :

1200V

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

30 A

Min Operating Temperature :

-55 °C

Operating Mode :

ENHANCEMENT MODE

Channel Type :

N Channel

Input Capacitance (Ciss) (Max) @ Vds :

22500pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

1200 V

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Packaging :

Tube

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

1250W Tc

Tradename :

HiPerFET

Input Capacitance :

22.5 nF

Power Dissipation (Max) :

1250W (Tc)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current Id :

30A

Vgs (Max) :

±20V

Rds On Max :

350 mΩ

Product Category :

MOSFET

Qualification :

-

Package Shape :

RECTANGULAR