IXFB210N30P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-On Delay Time :

46 ns

Height :

26.59mm

Package / Case :

TO-264-3, TO-264AA

Min Operating Temperature :

-55 °C

FET Type :

N-Channel

RoHS :

Details

Channel Type :

N

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Factory Lead Time :

26 Weeks

Input Capacitance :

16.2 nF

Configuration :

Single

Max Power Dissipation :

1.89 kW

Continuous Drain Current Id :

210A

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Type :

Polar3 HiPerFET Power MOSFET

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

16200pF @ 25V

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Package :

Tube

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150 °C

Pulsed Drain Current-Max (IDM) :

550A

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Drain to Source Resistance :

14.5 mΩ

Rds On Max :

14.5 mΩ

Rise Time :

25 ns

Series :

HiPerFET™, Polar3™

Pin Count :

3

Power Dissipation-Max :

1890W Tc

Element Configuration :

Single

Base Product Number :

IXFB210

Continuous Drain Current (ID) :

210A

Tradename :

HiPerFET

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

268nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

210A Tc

Packaging :

Tube

REACH SVHC :

No SVHC

FET Feature :

--

Number of Pins :

264

Transistor Element Material :

SILICON

Number of Elements per Chip :

1

Mounting Style :

Through Hole

MSL :

-

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

1890W (Tc)

Minimum Operating Temperature :

-55 °C

Number of Terminations :

3

DS Breakdown Voltage-Min :

300V

Threshold Voltage :

5V

Turn On Delay Time :

46 ns

Length :

20.29mm

Power Dissipation :

1.89kW

ECCN Code :

EAR99

Case Connection :

DRAIN

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

4000 mJ

Package Type :

PLUS264

Mount :

Surface Mount, Through Hole

Brand :

IXYS

Published :

2012

Maximum Operating Temperature :

+150 °C

Product Category :

MOSFET

Number of Elements :

1

Turn-Off Delay Time :

94 ns

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 105A, 10V

Supplier Device Package :

PLUS264™

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0145Ohm

Width :

5.31mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification :

-

Drain to Source Voltage (Vdss) :

300V