IXFB210N30P3
- Mfr.Part #
- IXFB210N30P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 210A PLUS264
- Stock
- 20,187
- In Stock :
- 20,187
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-264-3, TO-264AA
- Minimum Operating Temperature :
- -55 °C
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSIP-T3
- Product Status :
- Active
- Qualification :
- -
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 14.5m Ω @ 105A, 10V
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Number of Elements per Chip :
- 1
- Factory Lead Time :
- 26 Weeks
- Series :
- HiPerFET™, Polar3™
- Mounting Type :
- Through Hole
- Package Type :
- PLUS264
- Width :
- 5.31mm
- Maximum Operating Temperature :
- +150 °C
- Number of Channels :
- 1 Channel
- Mount :
- Surface Mount, Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 14.5 mΩ
- Height :
- 26.59mm
- Packaging :
- Tube
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150 °C
- Type :
- Polar3 HiPerFET Power MOSFET
- Number of Pins :
- 264
- Turn On Delay Time :
- 46 ns
- Pulsed Drain Current-Max (IDM) :
- 550A
- Mounting Style :
- Through Hole
- Input Capacitance :
- 16.2 nF
- Package :
- Tube
- Supplier Device Package :
- PLUS264™
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Turn-On Delay Time :
- 46 ns
- Drain-source On Resistance-Max :
- 0.0145Ohm
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 300V
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 268nC @ 10V
- Transistor Type :
- 1 N-Channel
- Threshold Voltage :
- 5V
- Power Dissipation :
- 1.89kW
- Power Dissipation (Max) :
- 1890W (Tc)
- Element Configuration :
- Single
- Published :
- 2012
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Channel Type :
- N
- Rise Time :
- 25 ns
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 210A
- MSL :
- -
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 300V
- Base Product Number :
- IXFB210
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 94 ns
- Rds On Max :
- 14.5 mΩ
- Configuration :
- Single
- Case Connection :
- DRAIN
- Max Power Dissipation :
- 1.89 kW
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Length :
- 20.29mm
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Power Dissipation-Max :
- 1890W Tc
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 16200pF @ 25V
- Min Operating Temperature :
- -55 °C
- Product Type :
- MOSFET
- Continuous Drain Current Id :
- 210A
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Tradename :
- HiPerFET
- Datasheets
- IXFB210N30P3

N-Channel Tube 14.5m Ω @ 105A, 10V ±20V 16200pF @ 25V 268nC @ 10V 300V TO-264-3, TO-264AA
IXFB210N30P3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 16200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 210A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 550A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 14.5 mΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFB210N30P3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 210A
the turn-off delay time is 94 ns
based on its rated peak drain current 550A.
single MOSFETs transistor is 14.5 mΩ
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFB210N30P3 Applications
There are a lot of IXYS
IXFB210N30P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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