IXFB210N30P3

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Mfr.Part #
IXFB210N30P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 210A PLUS264
Stock
20,187
In Stock :
20,187

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
20.29mm
FET Feature :
--
Rise Time :
25 ns
Package Type :
PLUS264
Current - Continuous Drain (Id) @ 25°C :
210A Tc
Number of Pins :
264
Width :
5.31mm
Continuous Drain Current (ID) :
210A
Power Dissipation (Max) :
1890W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
268nC @ 10V
Product Type :
MOSFET
FET Type :
N-Channel
Max Power Dissipation :
1.89 kW
Element Configuration :
Single
Input Capacitance :
16.2 nF
Power Dissipation-Max :
1890W Tc
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
300V
Power Dissipation :
1.89kW
Product Status :
Active
Vgs (Max) :
±20V
Turn-Off Delay Time :
94 ns
Channel Mode :
Enhancement
Configuration :
Single
Qualification :
-
Mounting Style :
Through Hole
Product Category :
MOSFET
Number of Elements per Chip :
1
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 8mA
Operating Mode :
ENHANCEMENT MODE
Max Operating Temperature :
150 °C
Package / Case :
TO-264-3, TO-264AA
Supplier Device Package :
PLUS264™
Input Capacitance (Ciss) (Max) @ Vds :
16200pF @ 25V
REACH SVHC :
No SVHC
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Case Connection :
DRAIN
Rds On Max :
14.5 mΩ
Maximum Operating Temperature :
+150 °C
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
14.5m Ω @ 105A, 10V
Factory Lead Time :
26 Weeks
Drain-source On Resistance-Max :
0.0145Ohm
Reach Compliance Code :
Compliant
Continuous Drain Current Id :
210A
Turn-On Delay Time :
46 ns
RoHS :
Details
Avalanche Energy Rating (Eas) :
4000 mJ
Mount :
Surface Mount, Through Hole
Transistor Type :
1 N-Channel
Min Operating Temperature :
-55 °C
Transistor Application :
SWITCHING
Threshold Voltage :
5V
JESD-30 Code :
R-PSIP-T3
Series :
HiPerFET™, Polar3™
Manufacturer :
IXYS
Type :
Polar3 HiPerFET Power MOSFET
Packaging :
Tube
Published :
2012
Drain to Source Resistance :
14.5 mΩ
Channel Type :
N
Turn On Delay Time :
46 ns
Number of Elements :
1
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
MSL :
-
Transistor Polarity :
N-Channel
Base Product Number :
IXFB210
Operating Temperature :
-55°C~150°C TJ
Height :
26.59mm
Pulsed Drain Current-Max (IDM) :
550A
Pin Count :
3
DS Breakdown Voltage-Min :
300V
Package :
Tube
Minimum Operating Temperature :
-55 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXFB210N30P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB210N30P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:264, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Type:Polar3 HiPerFET Power MOSFET, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFB210N30P3 pinout, IXFB210N30P3 datasheet PDF, IXFB210N30P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB210N30P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB210N30P3


N-Channel Tube 14.5m Ω @ 105A, 10V ±20V 16200pF @ 25V 268nC @ 10V 300V TO-264-3, TO-264AA

IXFB210N30P3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 16200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 210A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 550A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 14.5 mΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFB210N30P3 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 210A
the turn-off delay time is 94 ns
based on its rated peak drain current 550A.
single MOSFETs transistor is 14.5 mΩ
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFB210N30P3 Applications


There are a lot of IXYS
IXFB210N30P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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