IXFB210N30P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-264-3, TO-264AA

Minimum Operating Temperature :

-55 °C

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-T3

Product Status :

Active

Qualification :

-

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 105A, 10V

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Number of Elements per Chip :

1

Factory Lead Time :

26 Weeks

Series :

HiPerFET™, Polar3™

Mounting Type :

Through Hole

Package Type :

PLUS264

Width :

5.31mm

Maximum Operating Temperature :

+150 °C

Number of Channels :

1 Channel

Mount :

Surface Mount, Through Hole

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

14.5 mΩ

Height :

26.59mm

Packaging :

Tube

FET Type :

N-Channel

Max Operating Temperature :

150 °C

Type :

Polar3 HiPerFET Power MOSFET

Number of Pins :

264

Turn On Delay Time :

46 ns

Pulsed Drain Current-Max (IDM) :

550A

Mounting Style :

Through Hole

Input Capacitance :

16.2 nF

Package :

Tube

Supplier Device Package :

PLUS264™

Gate to Source Voltage (Vgs) :

20V

Channel Mode :

Enhancement

Turn-On Delay Time :

46 ns

Drain-source On Resistance-Max :

0.0145Ohm

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

300V

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

268nC @ 10V

Transistor Type :

1 N-Channel

Threshold Voltage :

5V

Power Dissipation :

1.89kW

Power Dissipation (Max) :

1890W (Tc)

Element Configuration :

Single

Published :

2012

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 8mA

Channel Type :

N

Rise Time :

25 ns

Number of Elements :

1

Continuous Drain Current (ID) :

210A

MSL :

-

Transistor Application :

SWITCHING

Brand :

IXYS

DS Breakdown Voltage-Min :

300V

Base Product Number :

IXFB210

REACH SVHC :

No SVHC

Turn-Off Delay Time :

94 ns

Rds On Max :

14.5 mΩ

Configuration :

Single

Case Connection :

DRAIN

Max Power Dissipation :

1.89 kW

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Length :

20.29mm

Avalanche Energy Rating (Eas) :

4000 mJ

Power Dissipation-Max :

1890W Tc

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

16200pF @ 25V

Min Operating Temperature :

-55 °C

Product Type :

MOSFET

Continuous Drain Current Id :

210A

Current - Continuous Drain (Id) @ 25°C :

210A Tc

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Tradename :

HiPerFET