IXFB210N30P3
- Mfr.Part #
- IXFB210N30P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 210A PLUS264
- Stock
- 20,187
- In Stock :
- 20,187
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 20.29mm
- FET Feature :
- --
- Rise Time :
- 25 ns
- Package Type :
- PLUS264
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- Number of Pins :
- 264
- Width :
- 5.31mm
- Continuous Drain Current (ID) :
- 210A
- Power Dissipation (Max) :
- 1890W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 268nC @ 10V
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Max Power Dissipation :
- 1.89 kW
- Element Configuration :
- Single
- Input Capacitance :
- 16.2 nF
- Power Dissipation-Max :
- 1890W Tc
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 300V
- Power Dissipation :
- 1.89kW
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 94 ns
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Qualification :
- -
- Mounting Style :
- Through Hole
- Product Category :
- MOSFET
- Number of Elements per Chip :
- 1
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Operating Mode :
- ENHANCEMENT MODE
- Max Operating Temperature :
- 150 °C
- Package / Case :
- TO-264-3, TO-264AA
- Supplier Device Package :
- PLUS264™
- Input Capacitance (Ciss) (Max) @ Vds :
- 16200pF @ 25V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Rds On Max :
- 14.5 mΩ
- Maximum Operating Temperature :
- +150 °C
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 14.5m Ω @ 105A, 10V
- Factory Lead Time :
- 26 Weeks
- Drain-source On Resistance-Max :
- 0.0145Ohm
- Reach Compliance Code :
- Compliant
- Continuous Drain Current Id :
- 210A
- Turn-On Delay Time :
- 46 ns
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Mount :
- Surface Mount, Through Hole
- Transistor Type :
- 1 N-Channel
- Min Operating Temperature :
- -55 °C
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 5V
- JESD-30 Code :
- R-PSIP-T3
- Series :
- HiPerFET™, Polar3™
- Manufacturer :
- IXYS
- Type :
- Polar3 HiPerFET Power MOSFET
- Packaging :
- Tube
- Published :
- 2012
- Drain to Source Resistance :
- 14.5 mΩ
- Channel Type :
- N
- Turn On Delay Time :
- 46 ns
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 20V
- MSL :
- -
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFB210
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 26.59mm
- Pulsed Drain Current-Max (IDM) :
- 550A
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 300V
- Package :
- Tube
- Minimum Operating Temperature :
- -55 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HiPerFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFB210N30P3

N-Channel Tube 14.5m Ω @ 105A, 10V ±20V 16200pF @ 25V 268nC @ 10V 300V TO-264-3, TO-264AA
IXFB210N30P3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 16200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 210A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 550A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 14.5 mΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFB210N30P3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 210A
the turn-off delay time is 94 ns
based on its rated peak drain current 550A.
single MOSFETs transistor is 14.5 mΩ
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFB210N30P3 Applications
There are a lot of IXYS
IXFB210N30P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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