IXFB210N30P3

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Mfr.Part #
IXFB210N30P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 210A PLUS264
Stock
20,187
In Stock :
20,187

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Width :
5.31mm
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
300V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
26.59mm
Published :
2012
Factory Lead Time :
26 Weeks
Channel Type :
N
Input Capacitance (Ciss) (Max) @ Vds :
16200pF @ 25V
Rds On Max :
14.5 mΩ
Supplier Device Package :
PLUS264™
MSL :
-
Element Configuration :
Single
Packaging :
Tube
DS Breakdown Voltage-Min :
300V
Number of Terminations :
3
Continuous Drain Current Id :
210A
Additional Feature :
AVALANCHE RATED
Minimum Operating Temperature :
-55 °C
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.0145Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
94 ns
Number of Elements per Chip :
1
FET Type :
N-Channel
RoHS :
Details
Continuous Drain Current (ID) :
210A
Turn-On Delay Time :
46 ns
Base Product Number :
IXFB210
Configuration :
Single
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Power Dissipation (Max) :
1890W (Tc)
Channel Mode :
Enhancement
Product Status :
Active
Power Dissipation :
1.89kW
Current - Continuous Drain (Id) @ 25°C :
210A Tc
Length :
20.29mm
Mount :
Surface Mount, Through Hole
Vgs(th) (Max) @ Id :
5V @ 8mA
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
268nC @ 10V
Max Power Dissipation :
1.89 kW
Pin Count :
3
Number of Channels :
1 Channel
Product Category :
MOSFET
Drain to Source Resistance :
14.5 mΩ
Reach Compliance Code :
Compliant
Type :
Polar3 HiPerFET Power MOSFET
Package Type :
PLUS264
Maximum Operating Temperature :
+150 °C
Power Dissipation-Max :
1890W Tc
Input Capacitance :
16.2 nF
Number of Pins :
264
Package :
Tube
Operating Temperature :
-55°C~150°C TJ
Qualification :
-
Brand :
IXYS
Threshold Voltage :
5V
Tradename :
HiPerFET
Min Operating Temperature :
-55 °C
Transistor Polarity :
N-Channel
REACH SVHC :
No SVHC
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
14.5m Ω @ 105A, 10V
Rise Time :
25 ns
Mounting Type :
Through Hole
Case Connection :
DRAIN
Manufacturer :
IXYS
Turn On Delay Time :
46 ns
JESD-30 Code :
R-PSIP-T3
Package / Case :
TO-264-3, TO-264AA
Pulsed Drain Current-Max (IDM) :
550A
Avalanche Energy Rating (Eas) :
4000 mJ
Series :
HiPerFET™, Polar3™
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Max Operating Temperature :
150 °C
Vgs (Max) :
±20V
Number of Elements :
1
Datasheets
IXFB210N30P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB210N30P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Type:Polar3 HiPerFET Power MOSFET, Number of Pins:264, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, IXFB210N30P3 pinout, IXFB210N30P3 datasheet PDF, IXFB210N30P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB210N30P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB210N30P3


N-Channel Tube 14.5m Ω @ 105A, 10V ±20V 16200pF @ 25V 268nC @ 10V 300V TO-264-3, TO-264AA

IXFB210N30P3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 16200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 210A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 550A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 14.5 mΩ.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 46 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 300V.The drain-to-source voltage (Vdss) of this transistor needs to be at 300V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFB210N30P3 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 210A
the turn-off delay time is 94 ns
based on its rated peak drain current 550A.
single MOSFETs transistor is 14.5 mΩ
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFB210N30P3 Applications


There are a lot of IXYS
IXFB210N30P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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