IXFB120N50P2
- Mfr.Part #
- IXFB120N50P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 120A PLUS264
- Stock
- 43,749
- In Stock :
- 43,749
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55 °C
- Input Capacitance :
- 19 nF
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 43 mΩ
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Max Operating Temperature :
- 150 °C
- Pulsed Drain Current-Max (IDM) :
- 300A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSIP-T3
- FET Feature :
- --
- Power Dissipation-Max :
- 1890W Tc
- Drain Current-Max (Abs) (ID) :
- 120 A
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- RoHS :
- Compliant
- Number of Elements :
- 1
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 1890W (Tc)
- Package / Case :
- TO-264-3, TO-264AA
- Series :
- HiPerFET™, PolarHV™
- Rds On Max :
- 43 mΩ
- Mount :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 500 V
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 1.89 kW
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 500mA, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 264
- Manufacturer :
- IXYS Corporation
- Continuous Drain Current (ID) :
- 120A
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFB120
- Reach Compliance Code :
- Compliant
- Published :
- 2011
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.043Ohm
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Power Dissipation-Max (Abs) :
- 1890 W
- Supplier Device Package :
- PLUS264™
- Factory Lead Time :
- 26 Weeks
- Package :
- Tube
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Power Dissipation :
- 1.89kW
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Datasheets
- IXFB120N50P2

N-Channel Tube 43m Ω @ 500mA, 10V ±30V 19000pF @ 25V 300nC @ 10V 500V TO-264-3, TO-264AA
IXFB120N50P2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 19000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 43 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFB120N50P2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 300A.
single MOSFETs transistor is 43 mΩ
a 500V drain to source voltage (Vdss)
IXFB120N50P2 Applications
There are a lot of IXYS
IXFB120N50P2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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