IXFB120N50P2
- Mfr.Part #
- IXFB120N50P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 120A PLUS264
- Stock
- 43,749
- In Stock :
- 43,749
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFB120
- Vgs (Max) :
- ±30V
- Power Dissipation-Max (Abs) :
- 1890 W
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 300A
- Factory Lead Time :
- 26 Weeks
- Packaging :
- Tube
- Published :
- 2011
- Package :
- Tube
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 500 V
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Mount :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 500mA, 10V
- Number of Terminations :
- 3
- Rds On Max :
- 43 mΩ
- Drain-source On Resistance-Max :
- 0.043Ohm
- Drain to Source Resistance :
- 43 mΩ
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- PLUS264™
- Max Power Dissipation :
- 1.89 kW
- Input Capacitance :
- 19 nF
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED
- Series :
- HiPerFET™, PolarHV™
- Power Dissipation :
- 1.89kW
- Manufacturer :
- IXYS Corporation
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Continuous Drain Current (ID) :
- 120A
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminals :
- 3
- Min Operating Temperature :
- -55 °C
- JESD-30 Code :
- R-PSIP-T3
- RoHS :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 120 A
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Max Operating Temperature :
- 150 °C
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 1890W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 264
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 1890W Tc
- Datasheets
- IXFB120N50P2
IXFB120N50P2 Documents

N-Channel Tube 43m Ω @ 500mA, 10V ±30V 19000pF @ 25V 300nC @ 10V 500V TO-264-3, TO-264AA
IXFB120N50P2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 19000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 43 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFB120N50P2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 300A.
single MOSFETs transistor is 43 mΩ
a 500V drain to source voltage (Vdss)
IXFB120N50P2 Applications
There are a lot of IXYS
IXFB120N50P2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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