IXFB120N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFB120

Vgs (Max) :

±30V

Power Dissipation-Max (Abs) :

1890 W

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

300A

Factory Lead Time :

26 Weeks

Packaging :

Tube

Published :

2011

Package :

Tube

FET Feature :

--

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500 V

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 8mA

Mount :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Rds On (Max) @ Id, Vgs :

43m Ω @ 500mA, 10V

Number of Terminations :

3

Rds On Max :

43 mΩ

Drain-source On Resistance-Max :

0.043Ohm

Drain to Source Resistance :

43 mΩ

Polarity/Channel Type :

N-Channel

Supplier Device Package :

PLUS264™

Max Power Dissipation :

1.89 kW

Input Capacitance :

19 nF

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Series :

HiPerFET™, PolarHV™

Power Dissipation :

1.89kW

Manufacturer :

IXYS Corporation

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

4000 mJ

Continuous Drain Current (ID) :

120A

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Drain to Source Voltage (Vdss) :

500V

Number of Terminals :

3

Min Operating Temperature :

-55 °C

JESD-30 Code :

R-PSIP-T3

RoHS :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Drain Current-Max (Abs) (ID) :

120 A

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Product Status :

Obsolete

Transistor Application :

SWITCHING

Max Operating Temperature :

150 °C

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Qualification Status :

Not Qualified

Power Dissipation (Max) :

1890W (Tc)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

500V

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

264

Package Shape :

RECTANGULAR

Power Dissipation-Max :

1890W Tc