IXFB120N50P2

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Mfr.Part #
IXFB120N50P2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 120A PLUS264
Stock
43,749
In Stock :
43,749

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Min Operating Temperature :
-55 °C
Input Capacitance :
19 nF
RoHS Status :
ROHS3 Compliant
Drain to Source Resistance :
43 mΩ
Product Status :
Obsolete
Polarity/Channel Type :
N-Channel
Drain to Source Breakdown Voltage :
500V
Max Operating Temperature :
150 °C
Pulsed Drain Current-Max (IDM) :
300A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSIP-T3
FET Feature :
--
Power Dissipation-Max :
1890W Tc
Drain Current-Max (Abs) (ID) :
120 A
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
19000pF @ 25V
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
RoHS :
Compliant
Number of Elements :
1
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
1890W (Tc)
Package / Case :
TO-264-3, TO-264AA
Series :
HiPerFET™, PolarHV™
Rds On Max :
43 mΩ
Mount :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
500V
Number of Terminals :
3
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
500 V
Packaging :
Tube
Avalanche Energy Rating (Eas) :
4000 mJ
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
1.89 kW
Vgs(th) (Max) @ Id :
5V @ 8mA
Rds On (Max) @ Id, Vgs :
43m Ω @ 500mA, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Pins :
264
Manufacturer :
IXYS Corporation
Continuous Drain Current (ID) :
120A
Qualification Status :
Not Qualified
Base Product Number :
IXFB120
Reach Compliance Code :
Compliant
Published :
2011
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.043Ohm
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
300nC @ 10V
Power Dissipation-Max (Abs) :
1890 W
Supplier Device Package :
PLUS264™
Factory Lead Time :
26 Weeks
Package :
Tube
Case Connection :
DRAIN
Terminal Position :
Single
Power Dissipation :
1.89kW
Transistor Application :
SWITCHING
FET Type :
N-Channel
Datasheets
IXFB120N50P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB120N50P2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Pins:264, IXFB120N50P2 pinout, IXFB120N50P2 datasheet PDF, IXFB120N50P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB120N50P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB120N50P2


N-Channel Tube 43m Ω @ 500mA, 10V ±30V 19000pF @ 25V 300nC @ 10V 500V TO-264-3, TO-264AA

IXFB120N50P2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 19000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 43 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFB120N50P2 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 300A.
single MOSFETs transistor is 43 mΩ
a 500V drain to source voltage (Vdss)


IXFB120N50P2 Applications


There are a lot of IXYS
IXFB120N50P2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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