IXFB120N50P2
- Mfr.Part #
- IXFB120N50P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 120A PLUS264
- Stock
- 43,749
- In Stock :
- 43,749
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS Corporation
- Drain to Source Breakdown Voltage :
- 500V
- Drain Current-Max (Abs) (ID) :
- 120 A
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Drain to Source Voltage (Vdss) :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation-Max :
- 1890W Tc
- Base Product Number :
- IXFB120
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-264-3, TO-264AA
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Surface Mount :
- No
- Mount :
- Through Hole
- Published :
- 2011
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 26 Weeks
- Input Capacitance :
- 19 nF
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- Supplier Device Package :
- PLUS264™
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 43 mΩ
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 300A
- Max Operating Temperature :
- 150 °C
- FET Type :
- N-Channel
- Number of Pins :
- 264
- Continuous Drain Current (ID) :
- 120A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 500mA, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Power Dissipation :
- 1.89kW
- Drain-source On Resistance-Max :
- 0.043Ohm
- Product Status :
- Obsolete
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs) :
- 1890 W
- Max Power Dissipation :
- 1.89 kW
- Packaging :
- Tube
- RoHS :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Min Operating Temperature :
- -55 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 19000pF @ 25V
- Rds On Max :
- 43 mΩ
- Pin Count :
- 3
- Power Dissipation (Max) :
- 1890W (Tc)
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Series :
- HiPerFET™, PolarHV™
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Datasheets
- IXFB120N50P2
IXFB120N50P2 Documents

N-Channel Tube 43m Ω @ 500mA, 10V ±30V 19000pF @ 25V 300nC @ 10V 500V TO-264-3, TO-264AA
IXFB120N50P2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 19000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [120 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 300A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 43 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFB120N50P2 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 300A.
single MOSFETs transistor is 43 mΩ
a 500V drain to source voltage (Vdss)
IXFB120N50P2 Applications
There are a lot of IXYS
IXFB120N50P2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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