IXFB110N60P3

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Mfr.Part #
IXFB110N60P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 110A PLUS264
Stock
12,047
In Stock :
12,047

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
275A
Package Type :
PLUS264
Pin Count :
3
Rds On (Max) @ Id, Vgs :
56m Ω @ 55A, 10V
Mounting Type :
Through Hole
Height :
26.59mm
Case Connection :
DRAIN
REACH SVHC :
No SVHC
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
600V
Package :
Tube
Factory Lead Time :
26 Weeks
RoHS :
Details
Series :
HiPerFET™, Polar3™
Qualification Status :
Not Qualified
Lead Free :
Lead Free
Packaging :
Tube
Configuration :
Single
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
FET Type :
N-Channel
Brand :
IXYS
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
3000 mJ
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
110A
Drain to Source Voltage (Vdss) :
600V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1.89kW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
264
Transistor Polarity :
N-Channel
Mount :
Through Hole
Power Dissipation (Max) :
1890W (Tc)
Transistor Application :
SWITCHING
Published :
2011
Minimum Operating Temperature :
-55 °C
Channel Type :
N
Input Capacitance (Ciss) (Max) @ Vds :
18000pF @ 25V
JESD-30 Code :
R-PSIP-T3
Width :
5.31mm
Supplier Device Package :
PLUS264™
Fall Time (Typ) :
11 ns
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Product Category :
MOSFET
Rise Time :
19ns
Vgs (Max) :
±30V
Number of Elements per Chip :
1
Manufacturer :
IXYS
Package / Case :
TO-264-3, TO-264AA
Channel Mode :
Enhancement
FET Feature :
--
Number of Terminations :
3
Power Dissipation-Max :
1890W Tc
Gate Charge (Qg) (Max) @ Vgs :
245nC @ 10V
Maximum Operating Temperature :
+150 °C
Tradename :
HiPerFET
Turn On Delay Time :
63 ns
Base Product Number :
IXFB110
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Threshold Voltage :
5V
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
5V @ 8mA
Length :
20.29mm
Drain-source On Resistance-Max :
0.056Ohm
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
77 ns
ECCN Code :
EAR99
Datasheets
IXFB110N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB110N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:264, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, IXFB110N60P3 pinout, IXFB110N60P3 datasheet PDF, IXFB110N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB110N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB110N60P3


N-Channel Tube 56m Ω @ 55A, 10V ±30V 18000pF @ 25V 245nC @ 10V 600V TO-264-3, TO-264AA

IXFB110N60P3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 77 ns.Peak drain current for this device is 275A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 63 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFB110N60P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 275A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFB110N60P3 Applications


There are a lot of IXYS
IXFB110N60P3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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