IXFB110N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.056Ohm

Lead Free :

Lead Free

Turn On Delay Time :

63 ns

Gate to Source Voltage (Vgs) :

30V

Height :

26.59mm

Transistor Type :

1 N-Channel

Fall Time (Typ) :

11 ns

Supplier Device Package :

PLUS264™

Maximum Operating Temperature :

+150 °C

Input Capacitance (Ciss) (Max) @ Vds :

18000pF @ 25V

Mounting Style :

Through Hole

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

Minimum Operating Temperature :

-55 °C

Gate Charge (Qg) (Max) @ Vgs :

245nC @ 10V

Rds On (Max) @ Id, Vgs :

56m Ω @ 55A, 10V

RoHS :

Details

Product Status :

Active

Product Type :

MOSFET

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

110A

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

275A

Power Dissipation :

1.89kW

Series :

HiPerFET™, Polar3™

Factory Lead Time :

26 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

19ns

Vgs(th) (Max) @ Id :

5V @ 8mA

Drain to Source Breakdown Voltage :

600V

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Brand :

IXYS

Reach Compliance Code :

Unknown

Turn-Off Delay Time :

77 ns

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Base Product Number :

IXFB110

Width :

5.31mm

Packaging :

Tube

FET Feature :

--

Case Connection :

DRAIN

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Number of Pins :

264

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Power Dissipation (Max) :

1890W (Tc)

Package Type :

PLUS264

Manufacturer :

IXYS

Product Category :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Published :

2011

Channel Mode :

Enhancement

Length :

20.29mm

Number of Channels :

1 Channel

Threshold Voltage :

5V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Package :

Tube

Channel Type :

N

Avalanche Energy Rating (Eas) :

3000 mJ

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

1890W Tc

Number of Elements per Chip :

1

Pin Count :

3

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single