IXFB110N60P3

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Mfr.Part #
IXFB110N60P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 600V 110A PLUS264
Stock
12,047
In Stock :
12,047

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Rise Time :
19ns
Tradename :
HiPerFET
Continuous Drain Current (ID) :
110A
Channel Mode :
Enhancement
Case Connection :
DRAIN
Supplier Device Package :
PLUS264™
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Pin Count :
3
Transistor Polarity :
N-Channel
Length :
20.29mm
Power Dissipation (Max) :
1890W (Tc)
Transistor Type :
1 N-Channel
Product Status :
Active
Vgs(th) (Max) @ Id :
5V @ 8mA
Drain to Source Voltage (Vdss) :
600V
Drain to Source Breakdown Voltage :
600V
Operating Temperature :
-55°C~150°C TJ
Width :
5.31mm
Number of Terminations :
3
Brand :
IXYS
Series :
HiPerFET™, Polar3™
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Power Dissipation :
1.89kW
Turn On Delay Time :
63 ns
Avalanche Energy Rating (Eas) :
3000 mJ
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Number of Elements per Chip :
1
RoHS :
Details
Drain-source On Resistance-Max :
0.056Ohm
Lead Free :
Lead Free
Base Product Number :
IXFB110
Power Dissipation-Max :
1890W Tc
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
18000pF @ 25V
Product Type :
MOSFET
ECCN Code :
EAR99
Package / Case :
TO-264-3, TO-264AA
Mounting Style :
Through Hole
Configuration :
Single
Rds On (Max) @ Id, Vgs :
56m Ω @ 55A, 10V
FET Type :
N-Channel
Factory Lead Time :
26 Weeks
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
245nC @ 10V
Vgs (Max) :
±30V
Turn-Off Delay Time :
77 ns
RoHS Status :
ROHS3 Compliant
Height :
26.59mm
FET Feature :
--
Package :
Tube
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
11 ns
Reach Compliance Code :
Unknown
Maximum Operating Temperature :
+150 °C
Threshold Voltage :
5V
JESD-30 Code :
R-PSIP-T3
Minimum Operating Temperature :
-55 °C
Channel Type :
N
Qualification Status :
Not Qualified
Mount :
Through Hole
Published :
2011
Number of Pins :
264
Package Type :
PLUS264
Pulsed Drain Current-Max (IDM) :
275A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Datasheets
IXFB110N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB110N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:264, IXFB110N60P3 pinout, IXFB110N60P3 datasheet PDF, IXFB110N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB110N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB110N60P3


N-Channel Tube 56m Ω @ 55A, 10V ±30V 18000pF @ 25V 245nC @ 10V 600V TO-264-3, TO-264AA

IXFB110N60P3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 77 ns.Peak drain current for this device is 275A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 63 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFB110N60P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 275A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFB110N60P3 Applications


There are a lot of IXYS
IXFB110N60P3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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